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| SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristiscs. It is mainly suitable for portable for portable equipment and SMPS. D KMB8D2N60QA N-Ch Trench MOSFET H T P G L FEATURES VDSS=60V, ID=8.2A. Drain-Source ON Resistance. RDS(ON)=22m (Max.) @ VGS=10V RDS(ON)=27m (Max.) @ VGS=4.5V Super High Dense Cell Design 1 4 B1 B2 8 5 A MOSFET Maximum Ratings (Ta=25 CHARACTERISTIC Drain Source Voltage Gate Source Voltage DC@TA=25 Drain Current DC@TA=70 Pulsed Drain Source Diode Forward Current Drain Power Dissipation TA=25 TA=70 Maximum Junction Temperature Storage Temperature Range Thermal Resistance, Junction to Ambient Note : *Surface Mounted on 1 1 FR4 Board Unless otherwise noted) SYMBOL PATING VDSS VGSS I D* 6.6 IDP IS PD* 2.0 Tj Tstg RthJA* 150 -55~150 41 /W W 40 3.0 3.0 A A A W 60 25 8.2 UNIT V V A DIM A B1 B2 D G H L P T MILLIMETERS _ 4.85 + 0.2 _ 3.94 + 0.2 _ 6.02 + 0.3 _ 0.4 + 0.1 0.15+0.1/-0.05 _ 1.63 + 0.2 _ 0.65 + 0.2 1.27 0.20+0.1/-0.05 FLP-8 KMB8D2N 60QA PIN CONNECTION (TOP VIEW) S S S G 1 8 D D D D 1 2 3 8 7 6 5 2 7 3 6 4 4 5 2007. 9. 3 Revision No : 1 1/4 KMB8D2N60QA ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Static Drain-Source Breakdown Voltage Drain Cut-off Current Gate Leakage Current Gate Threshold Voltage Drain-Source ON Resistance Forward Transconductance Dynamic Input Capaclitance Ouput Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS=10V) Qg* Total Gate Charge (VGS=4.5V) VDS=30V, VGS=10V, ID=8.2A Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-On Delay Time Turn-On Fall Time Source-Drain Diode Ratings Source-Drain Forward Voltage Note 1. Pulse Test : Pulse width 10 , Duty cycle 1% VSDF* VGS=0V, IDR=1.7A, 0.74 1.0 V Qgs* Qgd* td(on)* tr* td(off)* tf* VDD=30V, VGS=10V RL=3.6 , RG=3 6.0 14.4 8.2 5.5 29.7 5.2 ns 24.2 30 nC Ciss Coss Crss VDS=30V, VGS=0V, f=1MHz 1920 155 116 47.6 2300 58 pF BVDSS IDSS VDS=48V, VGS=0V, Tj=70 IGSS Vth RDS(ON)* VGS=4.5V, ID=7.6A Gfs* VDS=5V, ID=8.2A 20 2.4 27 S VGS= 20V, VDS=0V 1.0 16 5 100 3.0 22 m nA V VGS=0V, IDS=250 A VDS=48V, VGS=0V 60 1 A V SYMBOL ) UNLESS OTHERWISE NOTED TEST CONDITION MIN. TYP. MAX. UNIT VDS=VGS, ID=250 A VGS=10V, ID=8.2A 2007. 9. 3 Revision No : 1 2/4 KMB8D2N60QA Fig1. ID - VDS 40 50 VGS=6V Common Source Ta=25 C Pulse Test Fig2. RDS(ON) - ID Common Source Ta=25 C Pulse Test On-Resistance RDS(ON) (m) VGS=8V, 10V Drain Current ID (A) 30 40 30 20 VGS=5.5V VGS=4.0V VGS=4.5V 20 10 VGS=3.5V VGS=10V 10 0 0 0 4 8 12 16 20 0 10 20 30 40 50 Drain - Source Voltage VDS (V) Drain Current ID (A) Fig3. ID - VGS 40 60 Common Source VDS=5V Pulse Test Fig4. RDS(ON) - Tj On-Resistance RDS(ON) (m) Drain Current ID (A) 50 40 30 20 10 30 Common Source VGS=10V Pulse Test 20 10 150 C 25 C -55 C 0 0 1 2 3 4 5 0 -75 -50 -25 0 25 50 75 100 125 150 175 Gate Source Voltage VGS (V) Junction Temperature Tj ( C ) Fig5. Vth - Tj Gate Threshold Voltage Vth (V) 5 4 3 2 1 0 -75 -50 -25 Common Source VGS=VDS ID=250A Pulse Test Fig 6. IS - VSDF 40 Common Source Ta=25 C Pulse Test Drain Current ID (A) 30 20 10 0 0 25 50 75 100 125 150 175 0 0.4 0.8 1.2 1.6 2.0 Junction Temperature Tj ( C) Source-Drain Forward Voltage VSDF (V) 2007. 9. 3 Revision No : 1 3/4 KMB8D2N60QA Fig7. VGS - Qg 10 3500 VDS=30V Fig8. C - VDS f=1MHz Gate to Source Voltage VGS (V) Capacitance C (pF) 8 6 4 2 ID=8.2A 3000 2500 Ciss 2000 1500 1000 500 Coss Crss 0 0 10 20 30 40 50 0 0 5 10 15 20 25 30 Gate Charge Qg (nC) Drain - Source Voltage VDS (V) Fig9. Safe Operation Area 102 100s Drain Current ID (A) 101 1ms 10ms 100 Operation in this area is limited by RDS(ON) 100ms 1s 10s 10-1 10-2 VGS=10V SINGLE PULSE TA = 25 C DC 10-2 10-1 100 101 102 Drain - Source Voltage VDS (V) Fig10. Transient Thermal Response Curve Normalized Effective Transient Thermal Resistance Rth( C/W) 100 0.5 0.2 0.1 10-1 0.05 0.02 10-2 0.01 PDM t1 t2 SINGLE - Duty cycle D = t1/t2 10-3 10-2 10-1 100 10 102 103 10-3 10-4 Square Wave Pulse Duration (sec) 2007. 9. 3 Revision No : 1 4/4 |
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