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| PHOTOTRANSISTOR KM-4457P3C Features MECHANICALLY AND SPECTRALLY MATCHED TO THE L34 SERIES INFRARED EMITTING LED LAMP. WATER CLEAR LENS. Description Made with NPN silicon phototransistor chips. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is 0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAB0353 APPROVED : J. Lu REV NO: V.1 CHECKED : DATE: MAR/20/2002 DRAWN: L.Q.YANG PAGE: 1 OF 2 Electrical / Optical Characteristics at T)=25C Sy m b o l V BR C EO V BR EC O VCE (SAT) ICEO TR TF Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Collector-to-Emitter Saturation Voltage Collector Dark Current Rise Time (10% to 90%) Fall Time (90% to 10%) Min . 30 5 Ty p . 3 3 Max . 0.8 10 0 Un it V V V nA us us Tes t Co n d ic t io n I C=100uA Ee=0mW/cm2 I E=100uA Ee=0mW/cm2 I C=2mA Ee=20mW/cm2 VCE=10V Ee=0mW/cm2 VCE=5V IC=1mA RL=1000 I (ON) On State Collector Current 0.1 0.5 - mA VCE=5V Ee=1mW/cm2 =940nm Absolute Maximum Ratings at T)=25C Par am et er Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Power Dissipation at (or below) 25C Free Air Temperature Operating Temperature Range Storage Temperature Range Max . Rat in g s 30V 5V 100mW -40C ~ +85C -40C ~ +85C SPEC NO: DSAB0353 APPROVED : J. Lu REV NO: V.1 CHECKED : DATE: MAR/20/2002 DRAWN: L.Q.YANG PAGE: 2 OF 2 |
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