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TECHNICAL DATA KK74LV640 Octal 3-State Inverting Bus Transceiver The 74LV640 is a low-voltage Si-gate CMOS device and is pin and function compatible with 74HC/HCT640. The 74LV640 provides six inverting buffers with Schmitt-trigger action. * * * * Wide Operating Voltage: 1.2 to 3.6 V Optimized for Low Voltage applications: 1.0 to 3.6 V Accepts TTL input levels between VCC =2.7 V and VCC =3.6 V Low input current ORDERING INFORMATION KK74LV640N Plastic KK74LV640D SOIC TA = -40 to 125 C for all packages PIN ASSIGNMENT DIR 01 20 19 VCC OE A1 02 A2 03 LOGIC DIAGRAM DIR 01 OE A1 18 B1 17 B2 A3 04 A4 05 19 A5 06 A6 07 640 16 B3 15 B4 02 B1 03 A2 B2 04 14 B5 13 B6 12 B7 11 B8 18 A7 08 17 A8 09 GND 10 A3 B3 16 05 A4 B4 15 06 A5 B5 07 A6 14 FUNCTION TABLE Inputs OE DIR L H X B6 08 13 Inputs/Outputs A=B input Z A7 B7 input B=A Z A8 09 B8 12 L L H 11 PIN 20=VCC PIN 10 = GND 1 KK74LV640 MAXIMUM RATINGS* Symbol VCC IIK* Io* 1 2 Parameter DC supply voltage (Referenced to GND) DC input diode current DC output diode current DC output source or sink current -bus driver outputs DC GND current for types with - bus driver outputs DC VCC current for types with - bus driver outputs Power dissipation per paskade, plastic DIP+ SOIC package+ Storage temperature Lead temperature, 1.5 mm from Case for 10 seconds (Plastic DIP ), 0.3 mm (SOIC Package) Value -0.5 / +5.0 20 50 35 70 70 750 500 -65 / +150 260 Unit V mA mA mA mA mA mW C C IOK* 3 IGND ICC PD Tstg TL * Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to the Recommended Operating Conditions. +Derating - Plastic DIP: - 12 mW/C from 65 to 125C SOIC Package: : - 8 mW/C from 65 to 125C *1: VI < -0.5V or VI > VCC+0.5V *2: Vo < -0.5V or Vo > VCC+0.5V *3: -0.5V < Vo < VCC+0.5V RECOMMENDED OPERATING CONDITIONS Symbol VCC VIN, VOUT TA tLH, tHL Parameter DC Supply Voltage (Referenced to GND) DC Input Voltage (Referenced to GND) Operating Temperature, All Package Types Input Rise and Fall Time VCC =1.2 V VCC =2.0 V VCC =3.0 V VCC =3.6 V Min 1.2 0 -40 0 Max 3.6 VCC +125 1000 700 500 400 Unit V V C ns This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be taken to avoid applications of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, VIN and VOUT should be constrained to the range GND(VIN or VOUT)VCC. Unused inputs must always be tied to an appropriate logic voltage level (e.g., either GND or VCC). Unused outputs must be left open. 2 KK74LV640 DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND) Guaranteed Limit Symbol Parameter Test Conditions VO = VCC0.1 V VCC V 1.2 2.0 3.0 3.6 1.2 2.0 3.0 3.6 VI = VIH - or VIL IO = -50 A VI = VIH - or VIL IO = -8.0 mA VOL Low-Level Output Voltage VI = VIH - or VIL IO = 50 A VI = VIH - or VIL IO = 8.0 mA IIL Low-Level Input Leakage Current High-Level Input Leakage Current Maximum Three-State Leakage Current Quiescent Supply Current (per Package) VI=0 V * -0.1 -1.0 -1.0 A 1.2 2.0 3.0 3.6 3.0 0.09 0.09 0.09 0.09 0.33 0.1 0.1 0.1 0.09 0.40 0.1 0.1 0.1 0.09 0.50 V 1.2 2.0 3.0 3.6 3.0 25C min 0.9 1.4 2.1 2.5 1.1 1.92 2.92 3.52 2.48 max 0.3 0.6 0.9 1.1 -40C / 85C min 0.9 1.4 2.1 2.5 1.0 1.9 2.9 3.5 2.34 max 0.3 0.6 0.9 1.1 -40C / 125C min max 0.9 1.4 2.1 2.5 1.0 1.9 2.9 3.5 2.20 0.3 0.6 0.9 1.1 Unit VIH High-Level Input Voltage V VIL Low -Level Input Voltage V VOH High-Level Output Voltage V IIH VI= V * - 0.1 - 1.0 - 1.0 A IOZ VI= VIL or VIH VO=VCC or GND VI=0 V or V IO = 0 A 1.2 * - 0.5 - 5.0 - 10 A ICC * - 8.0 - 80.0 - 180.0 A . 3 KK74LV640 AC ELECTRICAL CHARACTERISTICS (CL=50 pF, tLH =tHL = 6.0 ns, RL=1 k) Guaranteed Limit Symbol tPLH, tPHL Parameter Propagation Delay, A to B , B to A Propagation Delay , Direction or Output Enable to A or B Propagation Delay , Direction or Output Enable to A or B Output Transition Time, Any Output Input Capacitance (Pin 1 or Pin 19) Input Capacitance (Pin 2-9 or Pin 11-18) VI=0 V or V Test Conditions VIL=0 V VIH=VCC tLH = tHL =6.0 ns L = 50 pF VIL=0 V VIH=VCC tLH = tHL =6.0 ns L = 50 pF VIL=0 V VIH=VCC tLH = tHL =6.0 ns L = 50 pF VIL=0 V VIH=VCC tLH = tHL =6.0 ns L = 50 pF VCC V 1.2 2.0 * 1.2 2.0 * 25C min max 100 23 14 120 30 20 -40C / 85C min max 125 28 18 140 37 24 -40C / 125C min max 140 34 21 160 43 28 Unit ns tPLZ, tPHZ ns tPZL, tPZH 1.2 2.0 * - 120 28 17 - 140 35 21 - 160 43 26 ns tTLH, tTHL 1.2 2.0 * 3.0 - 60 16 10 7.0 - 75 20 13 - - 90 24 15 - ns CI pF CI/O 3.0 - 20.0 - - - - pF CPD * - VCC=3.30.3V - 50 - - - - pF tHL 0.9 V1 0.1 0.9 V1 tLH VCC 0.1 PULSE GENERATOR VI VCC VO DEVICE UNDER TEST tPHL GND RT CL RL tPLH VCC 0.9 0.9 V1 0.1 V1 0.1 B (A) Termination resistance RT - should be equal to ZOUT of pulse generators tTHL tTLH Figure 1. Switching Waveforms Figure 2. Test Circuit 4 KK74LV640 N SUFFIX PLASTIC DIP (MS - 001AD) A Dimension, mm 20 11 B 1 10 Symbol A B C MIN 24.89 6.1 MAX 26.92 7.11 5.33 F L D F 0.36 1.14 2.54 7.62 0 2.92 7.62 0.2 0.38 0.56 1.78 C -T- SEATING N G D 0.25 (0.010) M T K PLANE G H H J M J K L M N 10 3.81 8.26 0.36 NOTES: 1. Dimensions "A", "B" do not include mold flash or protrusions. Maximum mold flash or protrusions 0.25 mm (0.010) per side. D SUFFIX SOIC (MS - 013AC) A 20 11 Dimension, mm Symbol MIN 12.6 7.4 2.35 0.33 0.4 1.27 9.53 0 0.1 0.23 10 0.25 8 0.3 0.32 10.65 0.75 MAX 13 7.6 2.65 0.51 1.27 H B P A B 1 G 10 C R x 45 C D F -TD 0.25 (0.010) M T C M K SEATING PLANE J F M G H J K M P R NOTES: 1. Dimensions A and B do not include mold flash or protrusion. 2. Maximum mold flash or protrusion 0.15 mm (0.006) per side for A; for B 0.25 mm (0.010) per side. 5 |
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