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| SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. FEATURES Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance KDS121E SILICON EPITAXIAL PLANAR DIODE : ESM. : VF=0.9V (Typ.). : trr=1.6ns(Typ.). A G H 2 1 E B D 3 DIM A B C D E G H J : CT=0.9pF (Typ.). MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 CHARACTERISTIC Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VRM VR IFM IO IFSM PD Tj Tstg RATING 85 80 300 * 100 * 2* 100 150 -55150 UNIT V V mA mA A mW ... ... 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 3 C MAXIMUM RATING (Ta=25... ) J ESM Note : * Unit Rating. Total Rating=Unit Rating x 1.5 Marking B3 ELECTRICAL CHARACTERISTICS (Ta=25... ) CHARACTERISTIC SYMBOL VF(1) Forward Voltage VF(2) VF(3) Reverse Current Total Capacitance Reverse Recovery Time IR CT trr TEST CONDITION IF=1mA IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA MIN. TYP. 0.60 0.72 0.90 0.9 1.6 MAX. 1.20 0.5 3.0 4.0 *IA pF nS V UNIT 2002. 6. 3 Revision No : 3 1/1 |
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