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Advanced Technical Information
PolarHVTM Power MOSFET
N-Channel Enhancement Mode
IXTQ 36N50P IXTT 36N50P
VDSS ID25
RDS(on)
= 500 V = 36 A 170 m
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M
Maximum Ratings 500 500 20 30 V V V V A A A mJ J V/ns
TO-3P (IXTQ)
G D S D (TAB)
TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 4 TC = 25C
36 100 36 50 1.5 10 500 -55 ... +150 150 -55 ... +150
TO-268 (IXTT)
G
S
D (TAB)
W C C C C C
G = Gate S = Source D = Drain TAB = Drain
1.6 mm (0.062 in.) from case for 10 s Plastic body Mounting torque TO-3P TO-268 (TO-3P)
300 250
Features International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
1.13/10 Nm/lb.in. 5.5 5.0 g g
Symbol Test Conditions (TJ = 25C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 250A VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125C
Characteristic Values Min. Typ. Max. Advantages 500 2.5 5.0 100 25 250 170 V V nA A A m Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2004 IXYS All rights reserved
DS99228(11/04)
IXTQ 36N50P IXTT 36N50P
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 25 35 4800 VGS = 0 V, VDS = 25 V, f = 1 MHz 510 60 29 VGS = 10 V, VDS = 0.5 ID25 RG = 4 (External) 23 82 23 135 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 30 65 0.25 0.21 S pF pF pF ns ns ns ns nC nC nC K/W K/W TO-3P (IXTQ) Outline
gfs Ciss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK
VDS = 20 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD t rr QRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 36 100 1.5 300 3.3 A A V ns C TO-268 Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692
IXTQ 36N50P IXTT 36N50P
Fig. 1. Output Characteristics @ 25C
36 32 28 VGS = 10V 8V 7V 80 70 60 VGS = 10V 8V 7V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
24 20 16 12 8 4 0 0 1 2 3 4 5 6 7 5V 5.5V 6V
50 40 30 20 10 0 0 2 4 6 8 10 12 14 16
6.5V
6V
5.5V 5V 18 20 22 24
V D S - Volts Fig. 3. Output Characteristics @ 125C
36 32 28 VGS = 10V 3.1 2.8 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
24 20 16 12 8 4 0 0 2 4 6 8 10 12 14 16 4.5V 5V 5.5V
R D S ( o n ) - Normalized
7V 6V
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 -50 -25 0 25 50 75 100 125 150 I D = 18A I D = 36A
I D - Amperes
V D S - Volts Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID
3.4 3 VGS = 10V TJ = 125C 40 35 30
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
R D S ( o n ) - Normalized
2.6 2.2 1.8 1.4 1 0.6 0 10 20 30 40
I D - Amperes
TJ = 25C 50 60 70 80
25 20 15 10 5 0 -50 -25 0 25 50 75 100 125 150
I D - Amperes
TC - Degrees Centigrade
(c) 2004 IXYS All rights reserved
IXTQ 36N50P IXTT 36N50P
Fig. 7. Input Adm ittance
55 50 45 40 35 30 25 20 15 10 5 0 4 4.5 5 5.5 6 6.5 7 0 0 10 20 30 40 50 60 70 80 90 TJ = 125C 25C -40C 60 50 40 30 20 10 TJ = -40C 25C 125C 70
Fig. 8. Transconductance
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
100 90 80 10 9 8 7 VDS = 250V I D = 18A I G = 10mA
g f s - Siemens
I D - Amperes
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
70
VG S - Volts
TJ = 125C TJ = 25C 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
60 50 40 30 20 10 0
6 5 4 3 2 1 0 0 20 40 60 80 100 120 140
V S D - Volts
Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area
1000 TJ = 150C
Fig. 11. Capacitance
10000
Capacitance - picoFarads
C iss 1000
TC = 25C
I D - Amperes
R DS(on) Limit 100
C oss 100
25s 10 100s 1ms
f = 1MHz 10 0 5 10 15 20 25 30
C rss 1 35 40 10
DC
10ms
100
1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
V D S - Volts
IXTQ 36N50P IXTT 36N50P
Fig . 1 3 . M a x im u m T r a n s ie n t T h e r m a l R e s is t a n c e
1.00
R ( t h ) J C - C / W
0.10
0.01 0.1 1
Pu ls e W id th - millis e c o n d s
10
100
1000
(c) 2004 IXYS All rights reserved

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