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HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family VDSS IXFH 76 N06-11 IXFH 76 N06-12 IXFH 76 N07-11 IXFH 76 N07-12 60 V 60 V 70 V 70 V ID25 76 A 76 A 76 A 76 A RDS(on) 11 mW 12 mW 11 mW 12 mW Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 ID119 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Symbol Test Conditions TJ = 25C to 175C TJ = 25C to 175C; RGS = 10 kW Continuous Transient TC TC TC TC = 25C (Chip capability = 125 A) = 119C, limited by external leads = 25C, pulse width limited by TJM = 25C N06 N07 N06 N07 Maximum Ratings 60 70 60 70 20 30 76 76 304 100 30 2 5 360 -55 ... +175 175 -55 ... +150 V V V V V V A A A A mJ J V/ns TO-247 AD (TAB) G = Gate, S = Source, Features q D = Drain, TAB = Drain TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C q W C C C C g q q q 1.6 mm (0.062 in.) from case for 10 s Mounting torque 300 6 q International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier 1.15/10 Nm/lb.in. Applications q q q q Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. N06 N07 60 70 2.0 V V V nA mA mA mW mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 mA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = 0.8 * VDSS VGS = 0 V VGS = 10 V, ID = 40 A q q q 3.4 100 DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays TJ = 25C TJ = 125C 100 500 11 12 Advantages q 76 N06/N07-11 76 N06/N07-12 Pulse test, t 300 ms, duty cycle d 2 % q q Easy to mount with 1 screw (isolated mounting screw hole) Space savings High power density 92785H (12/98) IXYS reserves the right to change limits, test conditions, and dimensions. (c) 2000 IXYS All rights reserved 1-4 IXFH 76 N06-11 IXFH 76 N06-12 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 30 40 4400 VGS = 0 V, VDS = 25 V, f = 1 MHz 2000 1200 40 VGS = 10 V, VDS = 50 V, ID = 30 A RG = 1 W (External) 70 130 55 240 VGS = 10 V, VDS = 0.5 * VDSS, ID = 40 A 30 120 0.42 0.25 S pF pF pF ns ns ns ns nC nC nC K/W K/W IXFH 76 N07-11 IXFH 76 N07-12 TO-247 AD (IXFH) Outline gfs C iss Coss C rss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 40 A, pulse test Dim. Millimeter Min. Max. A B C D E F G H 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.49 5.4 6.2 1.65 2.13 4.5 1.0 1.4 10.8 11.0 4.7 0.4 5.3 0.8 Inches Min. Max. 0.780 0.800 0.819 0.845 0.610 0.640 0.140 0.144 0.170 0.216 0.212 0.244 0.065 0.084 0.177 0.040 0.055 0.426 0.433 0.185 0.209 0.016 0.031 0.087 0.102 Source-Drain Diode Symbol IS ISM VSD t rr Test Conditions VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 76 304 1.5 150 250 A A V ns ns J K L M N 1.5 2.49 Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 ms, duty cycle d 2 % IF = 25 A, -di/dt = 100 A/ms, TJ = 25C VR = 25 V TJ = 125C (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFH 76 N06-11 IXFH 76 N06-12 Fig.1 Output Characteristics 100 90 80 70 60 50 40 30 20 10 0 0.0 5V TJ = 25C VGS=10V 9V 8V IXFH 76 N07-11 IXFH 76 N07-12 Fig. 2 Input Admittance 300 7V 6V 250 TJ=25C ID - Amperes ID - Amperes 200 150 100 50 0 TJ=150C TJ=100C 0.5 1.0 1.5 2.0 2 4 6 8 10 12 VDS - Volts VGS - Volts Fig. 3 Rds(on) vs. Drain Current 1.4 TJ = 25C Fig. 4 RDS(ON) Temperature Dependence 2.25 2.00 ID = 38A VGS = 10V 1.3 RDS(ON) - Normalized RDS(ON) - Normalized 1.2 VGS = 10V 1.75 1.50 1.25 1.00 0.75 1.1 1.0 VGS = 15V 0.9 0.8 0 50 100 150 200 250 300 0.50 -50 -25 0 25 50 75 100 125 150 175 ID - Amperes TJ - Degrees C Fig. 5 ID vs. Case Temperature 90 80 70 80 Fig. 6 Transconductance Transconductance - Siemens VGS=10V TJ = 25C 70 60 50 40 30 20 10 0 0 50 100 150 ID - Amperes 60 50 40 30 20 10 0 -50 -25 0 25 50 75 100 125 150 TJ = 100C TJ = 150C 200 250 300 Case Temperature - C ID - Amperes (c) 2000 IXYS All rights reserved 3-4 IXFH 76 N06-11 IXFH 76 N06-12 Fig. 7 Gate Charge 16 14 12 VDS = 40V ID = 38A IG = 1mA IXFH 76 N07-11 IXFH 76 N07-12 Fig. 8 Forward Bias Safe Operating Area 1000 Limited by Rds(on) 10ms 100ms 10 8 6 4 2 0 0 50 100 150 200 250 300 350 ID - Amperes VGS - Volts 100 1ms 10ms 10 100ms DC TC = 25C 1 1 10 100 Gate Charge - nCoulombs VDS - Volts Fig. 9 Capacitance Curves 6000 f = 1MHz Fig. 10 Source Current vs. Source to Drain Voltage 200 TJ =150C 5000 Capacitance - pF 3000 Coss ID - Amperes 4000 Ciss 150 100 TJ =150C TJ =25C 2000 1000 0 0 10 20 30 40 Crss 50 TJ =100C 0 0.0 0.5 1.0 1.5 2.0 VDS - Volts VSD - Volts Fig. 11 Transient Thermal Impedance Thermal Response - K/W D=0.5 0.100 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single Pulse 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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