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PD - 91701B
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
Product Summary
Part Number Radiation Level IRHM7Z60 100K Rads (Si) IRHM3Z60 300K Rads (Si) IRHM4Z60 600K Rads (Si) IRHM8Z60 1000K Rads (Si) RDS(on) 0.014 0.014 0.014 0.014 ID 35*A 35*A 35*A 35*A
IRHM7Z60 30V, N-CHANNEL
RAD-Hard HEXFET TECHNOLOGY
TM (R)
TO-254AA
International Rectifier's RAD-Hard ogy provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. HEXFET(R) technol-
Features:
n n n n n n n n n
Single Event Effect (SEE) Hardened Low RDS(on) Low Total Gate Charge Proton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25C ID @ VGS = 12V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page *Current is limited by internal wire diameter 35* 35* 140 250 2.0 20 500 35 25 0.35 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
o
C
300 ( 0.063 in. (1.6mm) from case for 10s) 9.3 (Typical )
g
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12/20/01
IRHM7Z60
Pre-Irradiation
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
30 -- -- 2.0 21 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.02 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 6.8 -- -- 0.014 4.0 -- 25 250 100 -100 421 104 115 32 370 177 280 -- V V/C V S( ) A
Test Conditions
VGS = 0V, ID = 1.0mA Reference to 25C, ID = 1.0mA VGS = 12V, ID = 35A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A VDS= 24V ,VGS=0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 15V VDD =15V, ID = 35A VGS =12V, RG = 2.35
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from package) to source lead (6mm/0.25in. from package)
C iss Coss Crss
Input Capacitance Output Capacitance Reverse Transfer Capacitance
-- -- --
7000 4800 1800
-- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 35* 140 1.5 220 930
Test Conditions
A
V nS C Tj = 25C, IS = 35A, VGS = 0V Tj = 25C, IF = 35A, di/dt 100A/s VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
*Current is limited by the internal wire diameter
Thermal Resistance
Parameter
R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient
Min Typ Max Units
-- -- -- -- 0.50 0.21 -- -- 48
C/W
Test Conditions
Typical Socket Mount
Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHM7Z60
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25C, Post Total Dose Irradiation
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254AA) Diode Forward Voltage
100K Rads(Si)1
300 - 1000K Rads (Si)2
Units V nA A V
Test Conditions
VGS = 12V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS=24V, VGS =0V VGS = 12V, ID =15A VGS = 12V, ID =15A VGS = 0V, IS = 35A
Min 30 2.0 -- -- -- -- -- --
Max -- 4.0 100 -100 25 0.014 0.014 1.5
Min 30 1.25 -- -- -- -- -- --
Max -- 4.5 100 -100 50 0.035 0.035 1.5
1. Part number IRHM7Z60 2. Part numbers IRHM3Z60, IRHM4Z60 and IRHM8Z60
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion LET MeV/(mg/cm)) 36.8 59.9 80.3 Energy (MeV) 305 345 313 Range (m) @VGS=0V Br I AU 39 32.8 26.5 30 25 22.5 @VGS=-5V 30 25 22.5 VDS(V) @VGS=-10V 30 20 15 @VGS=-15V 25 15 10 @VGS=-20V 20 10 _
35 30 25 VDS 20 15 10 5 0 0 -5 -10 VGS -15 -20 Br I AU
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7Z60
Pre-Irradiation
1000
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
1000
VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP
100
5.0V
5.0V
10 0.1
20s PULSE WIDTH T = 25 C
J 1 10 100
10 0.1
20s PULSE WIDTH T = 150 C
J 1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
TJ = 25 C TJ = 150 C
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 35A
I D , Drain-to-Source Current (A)
1.5
100
1.0
0.5
10 5 6 7 8
15V
V DS = 50V 20s PULSE WIDTH 10 11 9 12
0.0 -60 -40 -20
VGS = 10V
0 20 40 60 80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHM7Z60
15000
VGS , Gate-to-Source Voltage (V)
12000
VGS = Ciss = C = C Crss = oss oss
C, Capacitance (pF)
Ciss
9000
0V, f = 1MHz Cgs + Cgd , Cds SHORTED Cgd Cds + Cgd
20
ID = 35 A
16
VDS = 24V VDS = 15V
12
6000
C rss
8
3000
4
0 1 10 100
0 0 100
FOR TEST CIRCUIT SEE FIGURE 13
200 300 400
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
TJ = 25 C TJ = 150 C
OPERATION IN THIS AREA LIMITED BY R
DS(on)
10
I D , Drain Current (A)
100
100
1ms
1
0.1 0.0
V GS = 0 V
1.0 2.0 3.0 4.0 5.0 6.0
10
TC = 25 C TJ = 150 C Single Pulse
1 10
10ms
100
VSD ,Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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5
IRHM7Z60
Pre-Irradiation
120
LIMITED BY PACKAGE
100
VDS VGS RG
RD
D.U.T.
+
I D , Drain Current (A)
80
-VDD
VGS
60
Pulse Width 1 s Duty Factor 0.1 %
40
Fig 10a. Switching Time Test Circuit
VDS 90%
20
0 25 50 75 100 125 150
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
1
Thermal Response (Z thJC )
0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
0.1
0.01
0.001 0.00001
Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.1 1 0.0001 0.001 0.01
PDM t1 t2 10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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Pre-Irradiation
IRHM7Z60
1500
EAS , Single Pulse Avalanche Energy (mJ)
1 5V
TOP BOTTOM ID 16A 22A 35A
VD S
L
D R IV E R
1000
RG
D .U .T
IA S
+ - VD D
A
VGS 20V
tp
500
0 .0 1
Fig 12a. Unclamped Inductive Test Circuit
0 25 50 75 100 125 150
V (B R )D S S tp
Starting TJ , Junction Temperature ( C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
IAS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
12 V
QGS VG QGD
VGS
3mA
D.U.T.
+ V - DS
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRHM7Z60
Pre-Irradiation
Foot Notes:
Repetitive Rating; Pulse width limited by
maximum junction temperature. VDD = 25V, starting TJ = 25C, L=0.82mH Peak IL = 35A, VGS =12V ISD 35A, di/dt 81A/s, VDD 30V, TJ 150C
Pulse width 300 s; Duty Cycle 2% Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 24 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- TO-254AA
0.12 [.005] 3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249]
3.78 [.149] 3.53 [.139] A 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 0.12 [.005]
1.27 [.050] 1.02 [.040]
1.27 [.050] 1.02 [.040]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B
22.73 [.895] 21.21 [.835]
17.40 [.685] 16.89 [.665] 1 2 3
20.32 [.800] 20.07 [.790]
13.84 [.545] 13.59 [.535]
B R 1.52 [.060]
C
17.40 [.685] 16.89 [.665]
0.84 [.033] MAX.
4.82 [.190] 3.81 [.150] 3.81 [.150]
4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A
3X 3.81 [.150] 2X
1.14 [.045] 0.89 [.035] 0.36 [.014] BA
3.81 [.150]
2X
NOT ES : 1. 2. 3. 4. DIME NS IONING & T OLE RANCING PE R AS ME Y14.5M-1994. ALL DIMENS IONS ARE S HOWN IN MILLIMETE RS [INCHES ]. CONT ROLLING DIME NS ION: INCH. CONFORMS T O JEDEC OUT LINE TO-254AA.
PIN AS S IGNME NT S 1 = DRAIN 2 = S OURCE 3 = GAT E
CAUTION BERYLLIA WARNING PER MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/01
8
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