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PD-95865
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on) ID IRHLG770Z4 100K Rads (Si) 0.6 1.07A IRHLG730Z4 300K Rads (Si) 0.6 1.07A
IRHLG770Z4 60V, Quad N-CHANNEL
TECHNOLOGY
MO-036AB
International Rectifier's R7 TM Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM, voltage comparator and operational amplifiers.
Features:
n n n n n n n n n n
5V CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Ceramic Package Light Weight Complimentary P-Channel Available IRHLG7970Z4
Absolute Maximum Ratings (Per Die)
Parameter
ID @ VGS = 4.5V, TC = 25C ID @ VGS = 4.5V, TC = 100C IDM PD @ TC = 25C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current A Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy A Avalanche Current A Repetitive Avalanche Energy A Peak Diode Recovery dv/dt A Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the last page 1.07 0.67 4.28 1.0 0.01 10 13 1.07 0.1 7.0 -55 to 150
Pre-Irradiation
Units A
W
W/C
V mJ A mJ V/ns
C
300 (0.63 in./1.6 mm from case for 10s) 1.3 (Typical)
g
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12/28/06
IRHLG770Z4
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @Tj = 25C (Unless Otherwise specified)
Parameter
BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage VGS(th)/TJ Gate Threshold Voltage Coefficient gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current
Min
60 -- -- 1.0 -- 0.9 -- -- -- -- -- -- -- -- -- -- -- --
Typ Max Units
-- 0.08 -- -- -4.04 -- -- -- -- -- -- -- -- -- -- -- -- 10 -- -- 0.6 2.0 -- -- 1.0 10 100 -100 2.5 0.5 1.6 6.0 2.4 34 11 -- V V/C V mV/C S A nA nC
Test Conditions
VGS = 0V, ID = 250A Reference to 25C, ID = 1.0mA VGS = 4.5V, ID = 0.67A VDS = VGS, ID = 250A VDS = 10V, IDS = 0.67A A VDS= 48V ,VGS= 0V VDS = 48V, VGS = 0V, TJ =125C VGS = 10V VGS = -10V VGS = 4.5V, ID = 1.07A VDS = 30V VDD = 30V, ID = 1.07A, VGS = 5.0V, RG = 24 A
IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD
Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance
ns
nH
Measured from Drain lead (6mm /0.25in from pack.) to Source lead (6mm/0.25in from pack.)with Source wire internally bonded from Source pin to Drain pad
Ciss C oss C rss Rg
Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance
-- -- -- --
162 39 2.1 13.8
-- -- -- --
pF
VGS = 0V, VDS = 25V f = 1.0MHz f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
IS ISM VSD t rr Q RR ton Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time
Min Typ Max Units
-- -- -- -- -- -- -- -- -- -- 1.07 4.28 1.2 51 70
Test Conditions
A
V ns nC Tj = 25C, IS = 1.07A, VGS = 0V A Tj = 25C, IF = 1.07A, di/dt 100A/s VDD 25V A
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA Junction-to-Ambient
Min Typ Max Units
-- -- 125
C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available International Rectifier Website. For footnotes refer to the last page
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Radiation Characteristics Pre-Irradiation
IRHLG770Z4 IRHLG770Z4
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25C, Post Total Dose Irradiation AA
Parameter
BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-39) Static Drain-to-Source On-state Resistance (MO-036) Diode Forward Voltage
Up to 300K Rads (Si)1
Min
60 1.0 -- -- -- -- -- --
Max
Units
V nA A V
Test Conditions
VGS = 0V, ID = 250A VGS = VDS, ID = 250A VGS = 10V VGS = -10V VDS= 48V, VGS= 0V VGS = 4.5V, ID = 0.67A VGS = 4.5V, ID = 0.67A VGS = 0V, ID = 1.07A
-- 2.0 100 -100 1.0 0.5 0.6 1.2
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area (Per Die)
Ion LET
(MeV/(mg/cm )) Br I Au 37 60 84
2
Energy
(MeV) 305 370 390
Range
(m) 39 34 30 0V 60 60 60 -2V 60 60 60 -4V 60 60 60 -5V 60 60 60
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-6V 60 60 -
-7V 35 20 -
-8V 30 15 -
-10V 20 -
70 60 50 40 30 20 10 0 0 -2 -4 -6 VGS -8 -10 -12
Br I Au
For footnotes refer to the last page
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VDS
Fig a. Single Event Effect, Safe Operating Area
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IRHLG770Z4
Pre-Irradiation
10
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V TOP
10
VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.75V BOTTOM 2.5V TOP
1 2.5V
1
2.5V
60s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V)
60s PULSE WIDTH Tj = 150C 0.1 0.1 1 10 100 VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 1.07A
1.5
ID, Drain-to-Source Current (A)
T J = 150C
1 T J = 25C
1.0
VDS = 25V 20s PULSE WIDTH 15 0.1 2 2.5 3 3.5 4 VGS, Gate-to-Source Voltage (V)
0.5
VGS = 4.5V
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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Pre-Irradiation
IRHLG770Z4
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
80
2.5
VGS(th) Gate threshold Voltage (V)
ID = 1.0mA
2.0
70
1.5
1.0
60
ID = 50A
ID = 250A
0.5
ID = 1.0mA
ID = 150mA
50 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.0 -60 -40 -20 0 20 40 60 80 100 120 140 160
T J , Temperature ( C )
T J , Temperature ( C )
Fig 5. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 6. Typical Threshold Voltage Vs Temperature
280 240 200 160 120 80 40 0 1
C oss = C ds + C gd
VGS, Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHz C iss = C gs + C gd, C ds SHORTED C rss = C gd
12 ID = 1.07A 10 8 6 4 2 0 VDS = 48V VDS = 30V VDS = 12V
C, Capacitance (pF)
Ciss Coss
Crss
10 100
FOR TEST CIRCUIT SEE FIGURE 15 0 0.5 1 1.5 2 2.5 3 3.5 4
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 7. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge Vs. Gate-to-Source Voltage
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IRHLG770Z4
Pre-Irradiation
1.2 1.0
ID, Drain Current (A)
10
OPERATION IN THIS AREA LIMITED BY R DS(on)
0.8 0.6 0.4 0.2 0 25 50 75 100 125 150 T C , Case Temperature (C)
ID, Drain-to-Source Current (A)
1
1ms Tc = 25C Tj = 150C Single Pulse 1 10 VDS , Drain-to-Source Voltage (V)
10ms 100
0.1
Fig 9. Maximum Drain Current Vs. Case Temperature
Fig 10. Maximum Safe Operating Area
1000
Thermal Response ( Z thJA )
100
D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
P DM t1 t2
10
1
0.1
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc
0.0001 0.001 0.01 0.1 1 10 100 1000
0.01 1E-005
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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Pre-Irradiation
IRHLG770Z4
10
32
EAS , Single Pulse Avalanche Energy (mJ)
28 24 20 16 12 8 4 0
ISD, Reverse Drain Current (A)
TOP BOTTOM
ID 0.48A 0.68A 1.07A
1 T J = 150C
T J = 25C
0.1
VGS = 0V 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VSD , Source-to-Drain Voltage (V)
25
50
75
100
125
150
Starting T J , Junction Temperature (C)
Fig 12. Typical Source-to-Drain Diode Forward Voltage
Fig 13a. Maximum Avalanche Energy Vs. Drain Current
V(BR)DSS
15V
tp
DRIVER
VDS
L
RG
VGS 20V
. D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 13c. Unclamped Inductive Waveforms
Fig 13b. Unclamped Inductive Test Circuit
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IRHLG770Z4
Pre-Irradiation
VDS VGS RG V GS
Pulse Width 1 s Duty Factor 0.1 %
RD
VDS 90%
D.U.T. .
VDD
+
-
10% VGS
td(on) tr t d(off) tf
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
Current Regulator Same Type as D.U.T.
4.5V
QG QGS QGD
50K 12V .2F .3F
D.U.T. VGS
3mA
+ V - DS
VG
Charge
Fig 15a. Basic Gate Charge Waveform
IG
ID
Current Sampling Resistors
Fig 15b. Gate Charge Test Circuit
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Pre-Irradiation
IRHLG770Z4
Footnotes:
A Repetitive Rating; Pulse width limited by
maximum junction temperature. A VDD = 25V, starting TJ = 25C, L= 22.5mH Peak IL = 1.07A, VGS = 10V A ISD 1.07A, di/dt 214A/s, VDD 60V, TJ 150C
A Pulse width 300 s; Duty Cycle 2% A Total Dose Irradiation with VGS Bias.
10 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750, method 1019, condition A. A Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions -- MO-036AB
Q4 Q1
Q3 Q2
Q4 Q1
Q3 Q2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/2006
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