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IGBT Designer's Manual
Data Sheets
The IGBT devices listed in this Designer's Manual represent International Rectifier's IGBT line as of August, 1994. The data presented in this manual supersedes all previous specifications.
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PD - 9.687A
IRGBC20S
INSULATED GATE BIPOLAR TRANSISTOR
Features
* Switching-loss rating includes all "tail" losses * Optimized for line frequency operation ( to 400 Hz) See Fig. 1 for Current vs. Frequency curve
G E C
Standard Speed IGBT
VCES = 600V VCE(sat) 2.4V
@VGE = 15V, I C = 10A
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications.
TO-220AB
Absolute Maximum Ratings
Parameter
VCES IC @ T C = 25C IC @ T C = 100C ICM ILM VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw.
Max.
600 19 10 76 38 20 5.0 60 24 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m)
Units
V A
V mJ W
C
Thermal Resistance
Parameter
RJC RCS RJA Wt Junction-to-Case Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight
Min.
-- -- -- --
Typ.
-- 0.50 -- 2.0 (0.07)
Max.
2.1 -- 80 --
Units
C/W g (oz)
Revision 0
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IRGBC20S
Electrical Characteristics @ T = 25C (unless otherwise specified) J
V(BR)CES V(BR)ECS
V(BR)CES/TJ
VCE(on)
Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe ICES IGES
Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current
Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.75 -- V/C VGE = 0V, I C = 1.0mA -- 1.8 2.4 IC = 10A V GE = 15V -- 2.4 -- V IC = 19A See Fig. 2, 5 -- 1.9 -- IC = 10A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 2.0 5.8 -- S VCE = 100V, I C = 10A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V
Switching Characteristics @ T = 25C (unless otherwise specified) J
Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 16 26 IC = 10A 2.3 4.0 nC VCC = 400V See Fig. 8 7.0 12 VGE = 15V 24 -- TJ = 25C 23 -- ns IC = 10A, V CC = 480V 820 1200 VGE = 15V, R G = 50 910 1600 Energy losses include "tail" 0.24 -- 3.9 -- mJ See Fig. 9, 10, 11, 14 4.1 6.0 26 -- TJ = 150C, 30 -- ns IC = 10A, V CC = 480V 1100 -- VGE = 15V, R G = 50 1800 -- Energy losses include "tail" 7.0 -- mJ See Fig. 10, 14 7.5 -- nH Measured 5mm from package 360 -- VGE = 0V 36 -- pF VCC = 30V See Fig. 7 5.2 -- = 1.0MHz
Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot.
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IRGBC20S
25
For both:
Triangular w ave:
20
LO A D C U R RE NT (A )
D u ty cycle: 50% TJ = 125C T s in k = 9 0C G a te drive a s specified Pow er D issipation = 13W
C lamp voltage: 80% of rated
15
S quare w av e: 60% of rated voltage
10
5
Id e a l d io d e s
0 0.1 1 10 100
f, F re quency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=I RMS of fundamental; for triangular wave, I=I PK)
100
100
I C , C o lle ctor-to-E m itter C urre nt (A )
TJ = 25 C TJ = 15 0C
10
I C , C ollecto r-to -E m itter C u rrent (A )
T J = 1 50 C
10
T J = 25 C
1
1 1
V G E = 15 V 20 s P UL S E W ID TH
10
0.1 5 10
V C C = 1 00 V 5 s P UL S E W IDTH
15 20
V C E , C o llector-to-Em itter V oltage (V)
V G E , G ate -to-E m itter V olta ge (V )
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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IRGBC20S
20
V G E = 15 V
3.0
VG E = 1 5 V 80 s P UL S E W ID TH
16
V C E , C ollector-to-E m itter V oltage (V)
M aximum D C Collector Current (A )
I C = 20 A
2.5
12
2.0
I C = 10 A
8
1.5
4
I C = 5.0A
0 25 50 75 100 125 150
1.0 -60 -40 -20 0 20 40 60 80 1 00 120 140 160
T C , C ase Tem perature (C )
TC , C ase Tem perature (C )
Fig. 4 - Maximum Collector Current vs. Case Temperature
Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature
10
T he rm al R e sp ons e (Z thJ C )
1
D = 0 .5 0
0 .2 0 0 .1 0 0 .0 5
PD M
0.1
0 .0 2 0 .0 1
t
S IN G L E P U L S E (T H E R M A L R E S P O N S E )
N o te s: 1 . D u ty fa c to r D = t 1 /t 2
1 t2
0.01 0.00001
2 . P e a k TJ = P D M x Z thJ C + T C
0.0001
0.001
0.01
0.1
1
10
t 1 , R e c ta n gu la r P u ls e D ura tio n (s e c )
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRGBC20S
700
600
C, C apacitance (pF)
500
Cies
400
Coes
300
V G E , G ate-to-E m itter V oltag e (V )
V GE = 0V, f = 1MHz C ies = C ge + C gc , Cce SHORTED C res = C gc C oes = C ce + C gc
20
V C E = 48 0V I C = 10 A
16
12
8
200
Cres
100
4
0
0 1 10 100 0 4 8 12 16 20
V C E , C o llector-to-Em itter V oltage (V)
Q g , T o tal G a te C h a rg e (n C )
Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage
Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage
4 .2
4 .0
T o tal S w itc hing Los se s (m J)
VC C VG E TC IC
= 48 0V = 15V = 25 C = 1 0A
100
R G = 50 V GE = 15 V V CC = 4 80 V
I C = 20 A
10
I C = 10A I C = 5.0 A
3 .8
3 .6 20 30 40 50 60
1 -60 -40 -20 0 20 40 60 80 100 120 140 160
R G , G ate R esistance ( )
W
TC , C ase Tem perature (C )
Fig. 9 - Typical Switching Losses vs. Gate Resistance
Fig. 10 - Typical Switching Losses vs. Case Temperature
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IRGBC20S
15
12
I C , C ollector-to-E m itter Current (A )
Total Sw itching Losses (m J)
RG TC V CC VGE
= 50 = 150C = 4 80 V = 15 V
100
VG E E 20 V G= T J = 12 5C
S A FE O P E RA TIN G A RE A
10
9
6
3
0 4 8 12 16 20 24
1 1 10 100 1000
I C , C ollecto r-to-E m itter C urrent (A )
V C E , Collecto r-to-E m itter V oltage (V )
Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current
Fig. 12 - Turn-Off SOA
Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 1 - JEDEC Outline TO-220AB Section D - page D-12
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