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| IRFY1310M-T257 MECHANICAL DATA Dimensions in mm (inches) 10.41 (0.410) 10.67 (0.420) 4.83 (0.190) 5.08 (0.200) 0.89 (0.035) 1.14 (0.045) N-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS VDS ID(max) RDS(on) FEATURES 16.38 (0.645) 16.89 (0.665) 13.38 (0.527) 13.64 (0.537) 3.56 (0.140) Dia. 3.81 (0.150) 10.41 (0.410) 10.92 (0.430) 123 12.07 (0.500) 19.05 (0.750) 100V 14A W .055W 0.64 (0.025) Dia. 0.89 (0.035) 2.54 (0.100) BSC 3.05 (0.120) BSC * HERMETICALLY SEALED TO257 METAL PACKAGE * SIMPLE DRIVE REQUIREMENTS * LIGHTWEIGHT TO257AA - Metal Package Pin 1 - Drain Pin 2 - Source Pin 3 - Gate * SCREENING OPTIONS AVAILABLE * ALL LEADS ISOLATED FROM CASE ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg TL RqJC Gate - Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Package Mounting Surface Temperature (for 5 sec) Thermal Resistance Junction to Case (VGS = 0 , Tcase = 25C) (VGS = 0 , Tcase = 100C) 20V 34A 21A 136A 100W 0.8W/C -55 to 150C 300C 1.25C/W max. Notes 1) Pulse Test: Pulse Width 300ms, d 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/99 IRFY1310M-T257 ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) STATIC ELECTRICAL RATINGS Parameter Drain - Source Breakdown Voltage Gate-Body Leakage Forward Gate-Body Leakage Reverse Zero Gate Voltage Drain Current Static Drain - Source On-State Voltage1 Resistance1 DYNAMIC CHARACTERISTICS Gfs Forward Transductance 1 Ciss Coss Crss td(on) tr td(off) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time SOURCE - DRAIN DIODE CHARACTERISTICS Continuous Source Current Modified MOSPOWER , Test Conditions VGS = 0 VDS = VGS VGS 20V VGS = -20V VDS = Max Rate,VGS = 0V ID = 250mA ID = 250mA Min. 100 2.0 Typ. Max. 4.0 100 -100 Unit V nA BVDSS IGSS IGSS IDSS VGS(th) Gate Threshold Voltage 0.1 0.2 1.10 0.25 1.0 1.30 0.55 mA VDS = 0.8 Max Rate, VGS = 0V TC = 125C VDS(on) VGS = 10V VGS = 10V ID = 22A ID = 22A V RDS(on) Static Drain - Source On-State W VDS = 25V VGS = 0V VDS = 25V F = 1MHz VDD = 50V RG = 3.6W ID = 22A 14 1900 450 230 11 S pF ID = 22A RD = 2.9W 56 45 40 ns IS ISM VSD trr Qrr (Body Diode) Source Current1 (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge smbol showing the integral P-N Junction rectifier 5 / 34 A 112 1.3 180 1.2 270 1.8 V ns mc IS = 22A ,VGS = 0V, TC = 25C TJ = 25C di / dt = 100A/ms IF =22A Notes 1) Pulse Test: Pulse Width 300ms, d 2% Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 7/99 |
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