View IRFRU3707PBF_1256084.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

PD - 95019A
SMPS MOSFET
Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use
l l
IRFR3707PbF IRFRU3707PBF
HEXFET(R) Power MOSFET
VDSS
30V
RDS(on) max
13m
ID
61A
High Frequency Buck Converters for Computer Processor Power Lead-Free
Benefits
l l l
Ultra-Low RDS(on) Very Low Gate Impedance Fully Characterized Avalanche Voltage and Current
D-Pak IRFR3707 I-Pak IRFU3707
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
30 20 61 51 244 87 61 0.59 -55 to + 175
Units
V V A W W mW/C C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient
Typ.
--- --- ---
Max.
1.73 50 110
Units
C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) . For recommended footprint and soldering techniques refer to application note #AN-994
Notes through are on page 9
www.irf.com
12/13/04
1
IRFR/U3707PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient V(BR)DSS RDS(on) VGS(th) IDSS IGSS Min. 30 --- --- Static Drain-to-Source On-Resistance --- Gate Threshold Voltage 1.0 --- Drain-to-Source Leakage Current --- Gate-to-Source Forward Leakage --- Gate-to-Source Reverse Leakage --- Typ. --- 0.027 9.7 13.2 --- --- --- --- --- Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 13 VGS = 10V, ID = 15A m 17.5 VGS = 4.5V, ID = 12A 3.0 V VDS = VGS, ID = 250A 20 VDS = 24V, VGS = 0V A 100 VDS = 24V, VGS = 0V, TJ = 125C 200 VGS = 16V nA -200 VGS = -16V
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qoss td(on) tr td(off) tf Ciss Coss Crss Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Output Gate Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. 37 --- --- --- --- --- --- --- --- --- --- --- Typ. --- 19 8.2 6.3 18 8.5 78 11.8 3.3 1990 707 50 Max. Units Conditions --- S VDS = 15V, ID = 49.6A --- ID = 24.8A --- nC VDS = 15V --- VGS = 4.5V 27 VGS = 0V, VDS = 15V --- VDD = 15V --- ID = 24.8A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- VDS = 15V --- pF = 1.0MHz
Avalanche Characteristics
Symbol
EAS IAR
Parameter
Single Pulse Avalanche Energy Avalanche Current
Typ.
--- ---
Max.
213 61
Units
mJ A
Diode Characteristics
Symbol
IS
ISM
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Reverse Reverse Reverse Recovery Recovery Recovery Recovery Time Charge Time Charge
Min. Typ. Max. Units --- --- --- --- --- --- --- --- --- 61 --- 0.88 0.8 39 49 42 62 244 1.3 --- 59 74 63 93 V ns nC ns nC A
VSD trr Qrr trr Qrr
Conditions D MOSFET symbol showing the G integral reverse S p-n junction diode. TJ = 25C, IS = 31A, VGS = 0V TJ = 125C, IS = 31A, VGS = 0V TJ = 25C, I F = 31A, VR=20V di/dt = 100A/s TJ = 125C, IF = 31A, VR=20V di/dt = 100A/s
2
www.irf.com
IRFR/U3707PbF
1000
VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP
1000
VGS 10.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V TOP
ID, Drain-to-Source Current (A)
100
ID, Drain-to-Source Current (A)
100
3.5V
10
3.5V
10
20s PULSE WIDTH Tj = 25C
1 0.1 1 10 100
20s PULSE WIDTH Tj = 175C
1 0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.5
TJ = 25 C
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID = 61A
I D , Drain-to-Source Current (A)
2.0
TJ = 175 C
100
1.5
1.0
0.5
10 3.0
V DS = 15V 20s PULSE WIDTH 4.0 5.0 6.0 7.0 8.0
0.0 -60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
www.irf.com
3
IRFR/U3707PbF
3000
2500
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd
10
ID = 24.8A VDS = 15V
8
C, Capacitance (pF)
2000
Ciss
6
1500
Coss
1000
4
500
2
Crss
0 1 10 100
0 0 10 20 30 40
VDS , Drain-to-Source Voltage (V)
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
TJ = 175 C
I D , Drain Current (A)
100
10us
100 100us
10
TJ = 25 C
1
10
1ms 10ms
0.1 0.2
V GS = 0 V
0.6 1.0 1.4 1.8
1 1
TC = 25 C TJ = 175 C Single Pulse
10 100
VSD ,Source-to-Drain Voltage (V)
VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
4
www.irf.com
IRFR/U3707PbF
70
VDS
LIMITED BY PACKAGE
RD
60
VGS RG
D.U.T.
+
I D , Drain Current (A)
50 40 30
-VDD
10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
20
VDS
10 0
90%
25
50
75
100
125
150
175
TC , Case Temperature ( C)
10% VGS
Fig 9. Maximum Drain Current Vs. Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
10
Thermal Response (Z thJC )
1 D = 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1
0.01 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
www.irf.com
5
IRFR/U3707PbF
RDS ( on ) , Drain-to-Source On Resistance ( )
RDS(on) , Drain-to -Source On Resistance ( )
0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 0 50 100 150 200 250 ID , Drain Current ( A ) VGS = 10V VGS = 4.5V
0.013
0.012
0.011
ID = 31A
0.010
0.009 4.0 5.0 6.0 7.0 8.0 9.0 10.0
VGS, Gate -to -Source Voltage (V)
Fig 12. On-Resistance Vs. Drain Current
Current Regulator Same Type as D.U.T.
Fig 13. On-Resistance Vs. Gate Voltage
50K 12V .2F .3F
VGS
QGS
D.U.T. + V - DS
QG QGD
600
VG
EAS , Single Pulse Avalanche Energy (mJ)
VGS
3mA
Charge
IG ID
500
ID 10.1A 20.7A BOTTOM 24.8A TOP
Current Sampling Resistors
400
Fig 14a&b. Basic Gate Charge Test Circuit and Waveforms
300
200
15V
V(BR)DSS tp
VDS L
DRIVER
100
RG
20V
D.U.T
IAS
+ - VDD
0 25 50 75 100 125 150 175
A
I AS
tp
0.01
Starting TJ , Junction Temperature ( C)
Fig 15a&b. Unclamped Inductive Test Circuit and Waveforms
Fig 15c. Maximum Avalanche Energy Vs. Drain Current
6
www.irf.com
IRFR/U3707PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120 WIT H ASS EMBLY LOT CODE 1234 ASS EMBLED ON WW 16, 1999 IN T HE ASS EMBLY LINE "A" Note: "P" in as sembly line position indicates "Lead-Free" PART NUMBER INTERNAT IONAL RECTIF IER LOGO
IRFU120 12 916A 34
ASS EMBLY LOT CODE
DATE CODE YEAR 9 = 1999 WEEK 16 LINE A
OR
PART NUMBER INTERNAT IONAL RECTIF IER LOGO
IRFU120 12 34
DATE CODE P = DES IGNATES LEAD-F REE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = ASS EMBLY SIT E CODE
ASS EMBLY LOT CODE
www.irf.com
7
IRFR/U3707PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120 WIT H ASSEMBLY LOT CODE 5678 AS SEMBLED ON WW 19, 1999 IN T HE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRF U120 919A 56 78
ASS EMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO PART NUMBER
IRFU120 56 78
AS SEMBLY LOT CODE
DAT E CODE P = DESIGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS SEMBLY SIT E CODE
8
www.irf.com
IRFR/U3707PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 30A
Starting TJ = 25C, L = 0.7 mH
RG = 25, IAS = 24.8 A.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
www.irf.com
9

▲Up To Search▲

Price & Availability of IRFRU3707PBF

	To Download IRFRU3707PBF Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .