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PD - 97086
IRF6635PbF IRF6635TRPBF
l l l l l l l l l
RoHs Compliant Lead-Free (Qualified up to 260C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible Compatible with existing Surface Mount Techniques
DirectFET Power MOSFET
Typical values (unless otherwise specified)
VDSS
Qg
tot
VGS
Qgd
17nC
RDS(on)
Qgs2
4.7nC
RDS(on)
Qoss
29nC
30V max 20V max 1.3m@ 10V 1.8m@ 4.5V
Qrr
48nC
Vgs(th)
1.8V
47nC
MX
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST MQ MX MT
DirectFET ISOMETRIC
Description
The IRF6635PbF combines the latest HEXFET(R) Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. The IRF6635PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/ high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The IRF6635PbF has been optimized for parameters that are critical in synchronous buck converter's SyncFET sockets.
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C ID @ TC = 25C IDM EAS IAR
10
Typical RDS(on) (m)
Max.
Units
V
Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche CurrentAg
g
e e f
h
VGS, Gate-to-Source Voltage (V)
30 20 32 25 180 250 200 25
6.0 5.0 4.0 3.0 2.0 1.0 0.0 0 10 20 30 40 50 ID = 25A VDS = 24V VDS = 15V
A
mJ A
8 6 4 2 0 0 1 2 T J = 25C 3 4 5 6 7
ID = 32A
T J = 125C
8
9
10
60
VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage Notes: Click on this section to link to the appropriate technical paper. Click on this section to link to the DirectFET Website. Surface mounted on 1 in. square Cu board, steady state.
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part. Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 0.63mH, RG = 25, IAS = 25A.
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1
5/3/06
IRF6635PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss RG td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Output Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min.
30 --- --- --- 1.35 --- --- --- --- --- 45 --- --- --- --- --- --- ---
---
Typ. Max. Units
--- 24 1.3 1.8 1.8 -6.1 --- --- --- --- --- 47 12 4.7 17 13 22 29 1.0 21 13 33 8.3 5970 1280 600 --- --- --- --- --- --- --- --- --- --- --- pF ns nC
Conditions
VGS = 0V, ID = 250A VGS = 10V, ID = 32A i VGS = 4.5V, ID = 25A i VDS = VGS, ID = 250A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 15V, ID = 25A VDS = 15V
--- --- 1.8 2.4 2.35 --- 1.0 150 100 -100 --- 71 --- ---
V m V mV/C A nA S
mV/C Reference to 25C, ID = 1mA
nC
VGS = 4.5V ID = 25A See Fig. 15 VDS = 16V, VGS = 0V VDD = 16V, VGS = 4.5V ID = 25A Clamped Inductive Load See Fig. 16 & 17 VGS = 0V VDS = 15V = 1.0MHz i
--- --- --- --- --- --- ---
Diode Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) g Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge --- --- --- --- 20 48 1.0 30 72 V ns nC --- --- 250
Min.
---
Typ. Max. Units
--- 110 A
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 25A, VGS = 0V i TJ = 25C, IF = 25A di/dt = 500A/s i See Fig. 18
Notes:
Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400s; duty cycle 2%.
2
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IRF6635PbF
Absolute Maximum Ratings
P D @TA = 25C P D @TA = 70C P D @TC = 25C TP TJ TSTG
e Power Dissipation e Power Dissipation f
Power Dissipation Operating Junction and
Parameter
Max.
2.8 1.8 89 270 -40 to + 150
Units
W
Peak Soldering Temperature Storage Temperature Range
C
Thermal Resistance
RJA RJA RJA RJC RJ-PCB
100
el Junction-to-Ambient jl Junction-to-Ambient kl Junction-to-Case fl
Junction-to-Ambient Linear Derating Factor
Parameter
Typ.
--- 12.5 20 --- 1.0 0.022
Max.
45 --- --- 1.4 ---
Units
C/W
Junction-to-PCB Mounted
eA
W/C
D = 0.50
Thermal Response ( Z thJA )
10
0.20 0.10 0.05 0.02 0.01
J J 1 1 R1 R1 2 R2 R2 R3 R3 3 R4 R4 A 2 3 4 4 A
1
Ri (C/W)
0.6784 17.299 17.566 9.4701
i (sec)
0.001268 0.033387 0.508924 11.19309
0.1
0.01
SINGLE PULSE ( THERMAL RESPONSE )
Ci= i/Ri Ci= i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc
0.01 0.1 1 10 100
0.001 1E-006 1E-005 0.0001 0.001
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes: Used double sided cooling, mounting pad with large heatsink. Mounted on minimum footprint full size board with metalized back and with small clip heatsink.
t1 , Rectangular Pulse Duration (sec)
R is measured at TJ of approximately 90C.
Surface mounted on 1 in. square Cu (still air).
Mounted to a PCB with small clip heatsink (still air)
Mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air)
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IRF6635PbF
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
1000
TOP VGS 10V 5.0V 4.5V 4.0V 3.5V 3.0V 2.8V 2.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
BOTTOM
100
10
2.5V 1 0.1 1
60s PULSE WIDTH
Tj = 25C 10
10
2.5V
60s PULSE WIDTH
Tj = 150C 10 100 1000
100
1000
0.1
1
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 VDS = 15V 60s PULSE WIDTH 100 T J = 150C 10 T J = 25C T J = -40C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
1.5 ID = 32A
ID, Drain-to-Source Current ()
1.0
1
V GS = 4.5V V GS = 10V
0.1 1 2 3 4
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 6. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 7. Normalized On-Resistance vs. Temperature
30
T J = 25C
Typical RDS(on) Normalized ( m)
25 20 15 10 5 0
C, Capacitance(pF)
10000 Ciss
Vgs = 3.0V Vgs = 3.5V Vgs = 4.0V Vgs = 4.5V Vgs = 5.0V Vgs = 10V
1000
Coss Crss
100 1 10 VDS, Drain-to-Source Voltage (V) 100
20
60
100
140
180
220
260
ID, Drain Current (A)
Fig 8. Typical Capacitance vs.Drain-to-Source Voltage
Fig 9. Normalized Typical On-Resistance vs. Drain Current and Gate Voltage
4
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IRF6635PbF
1000
1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
100 10msec
100sec
1msec 10 100msec 1 T A = 25C T J = 150C Single Pulse 0.01 0.10 1.00 10.00 100.00
10
1
T J = 150C T J = 25C T J = -40C
VGS = 0V 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V)
0.1 VDS , Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
200
VGS(th) Gate threshold Voltage (V)
Fig11. Maximum Safe Operating Area
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 ID = 250A
175 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (C)
ID, Drain Current (A)
-75 -50 -25
0
25
50
75 100 125 150
T J , Temperature ( C )
Fig 12. Maximum Drain Current vs. Case Temperature
900
EAS , Single Pulse Avalanche Energy (mJ)
Fig 13. Threshold Voltage vs. Temperature
800 700 600 500 400 300 200 100 0 25 50 75
ID 9.1A 11A BOTTOM 25A TOP
100
125
150
Starting T J , Junction Temperature (C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRF6635PbF
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
Fig 15a. Gate Charge Test Circuit
Fig 15b. Gate Charge Waveform
V(BR)DSS
15V
tp
DRIVER
VDS
L
VGS RG
D.U.T
IAS
+ V - DD
A
20V
tp
0.01
I AS
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
LD VDS
90%
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
VDS
10%
VGS
td(on) tr td(off) tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
6
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IRF6635PbF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * di/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 18. Diode Reverse Recovery Test Circuit for N-Channel HEXFET(R) Power MOSFETs
DirectFET Substrate and PCB Layout, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
G = GATE D = DRAIN S = SOURCE
D S G S D
D
D
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IRF6635PbF
DirectFET Outline Dimension, MX Outline (Medium Size Can, X-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all recommendations for stencil and substrate designs.
DIMENSIONS
METRIC CODE MIN MAX A 6.35 6.25 B 4.80 5.05 C 3.95 3.85 D 0.45 0.35 E 0.72 0.68 F 0.72 0.68 G 1.42 1.38 H 0.84 0.80 J 0.38 0.42 K 0.88 1.01 L 2.28 2.41 M 0.616 0.676 R 0.020 0.080 P 0.08 0.17 IMPERIAL MIN MAX 0.246 0.250 0.189 0.201 0.152 0.156 0.014 0.018 0.027 0.028 0.027 0.028 0.054 0.056 0.032 0.033 0.015 0.017 0.035 0.039 0.090 0.095 0.0235 0.0274 0.0008 0.0031 0.003 0.007
DirectFET Part Marking
8
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IRF6635PbF
DirectFET Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm Std reel quantity is 4800 parts. (ordered as IRF6635TRPBF). For 1000 parts on 7" reel, order IRF6635TR1PBF REEL DIMENSIONS STANDARD OPTION (QTY 4800) TR1 OPTION (QTY 1000) IMPERIAL IMPERIAL METRIC METRIC MIN MAX CODE MIN MAX MIN MAX MAX MIN 12.992 N.C A 6.9 N.C 177.77 N.C 330.0 N.C 0.795 0.75 N.C B N.C 19.06 20.2 N.C N.C 0.504 C 0.53 0.50 13.5 12.8 0.520 13.2 12.8 0.059 D 0.059 N.C 1.5 1.5 N.C N.C N.C 3.937 E 2.31 N.C 58.72 100.0 N.C N.C N.C F N.C N.C N.C 0.53 N.C 0.724 18.4 13.50 G 0.488 0.47 11.9 N.C 12.4 0.567 14.4 12.01 H 0.469 0.47 11.9 N.C 11.9 0.606 15.4 12.01
LOADED TAPE FEED DIRECTION
CODE A B C D E F G H
DIMENSIONS IMPERIAL METRIC MIN MIN MAX MAX 0.311 0.319 7.90 8.10 0.154 0.161 3.90 4.10 0.469 11.90 0.484 12.30 0.215 0.219 5.45 5.55 0.201 5.10 0.209 5.30 0.256 6.50 0.264 6.70 0.059 1.50 N.C N.C 0.059 1.50 0.063 1.60
Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.05/06
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