 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Data Sheet No.PD60220 IPS031R FULLY PROTECTED POWER MOSFET SWITCH Features * * * * * Over temperature shutdown Over current shutdown Active clamp Low current & logic level input E.S.D protection Product Summary Rds(on) V clamp Ishutdown Ton/Toff Package 60m (max) 50V 14A 1.5s Description The IPS031R are fully protected three terminal SMART POWER MOSFETs that feature over-current, over-temperature, ESD protection and drain to source active clamp.These devices combine a HEXFET(R) POWER MOSFET and a gate driver. They offer full protection and high reliability required in harsh environments. The driver allows short switching times and provides efficient protection by turning OFF the power MOSFET when the temperature exceeds 165oC or when the drain current reaches 14A. The device restarts once the input is cycled. The avalanche capability is significantly enhanced by the active clamp and covers most inductive load demagnetizations. 3-Lead D-Pak Typical Connection Load R in series (if needed) D IN control ! " S Logic signal (Refer to lead assignment for correct pin configuration) www.irf.com 1 IPS031R Absolute Maximum Ratings Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are referenced to SOURCE lead. (TAmbient = 25oC unless otherwise specified). PCB mounting uses the standard footprint with 70 m copper thickness. Symbol Parameter Vds Vin Iin, max Isd cont. Maximum drain to source voltage Maximum input voltage Maximum IN current Diode max. continuous current (1) rth=100oC/W rth=5oC/W rth=50oC/W Isd pulsed Diode max. pulsed current (1) Pd Maximum power dissipation(1) rth=50oC/W rth=100oC/W ESD1 ESD2 T stor. T j max. T lead Electrostatic discharge voltage (Human Body) Electrostatic discharge voltage (Machine Model) Max. storage temperature Max. junction temperature Lead temperature (soldering, 10 seconds) Min. -- -0.3 -10 -- -- -- -- -- -- -- -- -55 -40 -- Max. 47 7 +10 1.6 18 3 18 2.5 1.25 4 0.5 150 +150 300 Units V mA Test Conditions D-Pak Std footprint A D-Pak with Rth=5oC/W D-Pak with sq. footprint W C=100pF, R=1500, kV C=200pF, R=0, L=10H o C Thermal Characteristics Symbol Parameter R th 1 R th 2 R th 3 Thermal resistance with standard footprint Thermal resistance with 1" square footprint Thermal resistance junction to case Min. -- -- -- Typ. 100 50 3 Max. Units Test Conditions -- -- -- o C/W D-PAK Recommended Operating Conditions These values are given for a quick design. For operation outside these conditions, please consult the application notes. Symbol Parameter Vds (max) Continuous drain to source voltage VIH High level input voltage VIL Low level input voltage I ds Continuous drain current Tamb=85oC TAmbient = 85oC, IN = 5V, rth = 50oC/W, Tj = 125oC) 1" sq. footprint TAmbient = 85oC, IN = 5V, rth = 100oC/W, Tj = 125oC) Std. footprint Rin Recommended resistor in series with IN pin Tr-in(max) Max recommended rise time for IN signal (see fig. 2) Fr-Isc (2) Max. frequency in short circuit condition (Vcc = 14V) (1) Limited by junction temperature (pulsed current limited also by internal wiring) (2) Operations at higher switching frequencies is possible. See Application. Notes. Min. -- 4 0 -- -- 0.2 -- 0 Max. 35 6 0.5 3.3 2 5 1 1 Units V A k S kHz 2 www.irf.com IPS031R Static Electrical Characteristics (Tj = 25oC unless otherwise specified.) Symbol Parameter R ds(on) R ds(on) I dss @Tj=25oC Min. 20 -- 0 0 47 50 7 1 25 50 Typ. 45 75 0.5 5 52 53 8.1 1.6 90 130 Max. Units Test Conditions 60 100 25 50 56 60 9.5 2 200 250 m Vin = 5V, Ids = 1A Vcc = 14V, Tj = 25oC A Vcc = 40V, Tj = 25oC Id = 20mA (see Fig.3 & 4) Id=Ishutdown (see Fig.3 & 4) Iin = 1 mA Id = 50mA, Vds = 14V Vin = 5V Vin = 5V over-current triggered ON state resistance Tj = 25oC ON state resistance Tj = 150oC Drain to source leakage current Drain to source leakage current Drain to source clamp voltage 1 Drain to source clamp voltage 2 IN to source clamp voltage IN threshold voltage ON state IN positive current OFF state IN positive current I dss2 @Tj=25oC V clamp 1 V clamp 2 V in clamp V th Iin , -on Iin, -off V A Switching Electrical Characteristics Vcc = 14V, Resistive Load = 5 , Rinput = 50, 100s pulse,Tj = 25oC, (unless otherwise specified). Symbol Parameter Ton Tr Trf T off Tf Qin Turn-on delay time Rise time Time to 130% final Rds(on) Turn-off delay time Fall time Total gate charge Min. 0.05 0.4 -- 0.8 0.5 -- Typ. Max. Units Test Conditions 0.3 1 8 2 1.5 11 0.6 2 -- 3.5 2.5 -- See figure 2 s See figure 2 nC Vin = 5V Protection Characteristics Symbol Parameter T sd I sd Vreset Treset EOI_OT Over temperature threshold Over current threshold IN protection reset threshold Time to reset protection Short circuit energy (see application note) Min. -- 10 1.5 2 -- Typ. 165 14 2.3 10 400 Max. Units Test Conditions -- 18 3 40 -- o C A V s J See fig. 1 See fig. 1 Vin = 0V, Tj = 25oC Vcc = 14V www.irf.com 3 IPS031R Functional Block Diagram All values are typical DRAIN 47 V 300 200 k IN 8.1 V 80 A S R Q Q I sense T > 165c I > 1sd SOURCE Lead Assignments 2 (D) 1 3 In D S D-Pak IPS031R 4 www.irf.com IPS031R Vin 5V 0V Vin 10 % t < T reset I shutdown t > T reset 90 % Tr-in Ids Isd 90 % Ids 10 % Td on tr Td off tf T Tsd (165 c) T shutdown Vds Figure 1 - Timing diagram Figure 2 - IN rise time & switching time definitions T clamp Vin Rem : V load is negative during demagnetization L R D IN S V load + 14 V - Ids Vds clamp Vin 5v 0v Vds Ids Vds ( Vcc ) ( see Appl . Notes to evaluate power dissipation ) Figure 3 - Active clamp waveforms Figure 4 - Active clamp test circuit www.irf.com 5 IPS031R All curves are typical values with standard footprints. Operating in the shaded area is not recommended. 100 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 Tj = 25 C o 200% 180% 160% Tj = 150oC 140% 120% 100% 80% 60% 40% 20% 0% -50 -25 0 25 50 75 100 125 150 175 Figure 5 - Rds ON (m) Vs Input Voltage (V) Figure 6 - Normalised Rds ON (%) Vs Tj (oC) 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 6 7 8 ton delay rise tim e 130% final rdson 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 5 toff delay fall time 6 7 8 Figure 7 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs Input Voltage (V) Figure 8 - Turn-OFF Delay Time & Fall Time (us) Vs Input Voltage (V) 6 www.irf.com IPS031R 100 100 delay on rise tim e 130% rdson 10 10 delay off fall tim e 1 1 0. 1 10 100 1000 10000 0. 1 10 100 1000 10000 Figure 9 - Turn-ON Delay Time, Rise Time & Time to 130% final Rds(on) (us) Vs IN Resistor () Figure 10 - Turn-OFF Delay Time & Fall Time (us) Vs IN Resistor () 20 18 16 14 12 10 8 6 4 2 0 0 1 2 3 4 5 6 7 8 Isd 25C Ilim 25C 20 18 16 14 12 10 8 6 4 2 0 -50 -25 0 25 50 75 100 125 150 Figure 11 - Current Iimitation & I shutdown (A) Vs Vin (V) Figure 12 - I shutdown (A) Vs Temperature (oC) www.irf.com 7 IPS031R 15 Rthja=5C/W 100 - - - - Tj=25 C _____Tj = 100 C Free air / standard footprint 10 Rthja=15C/W 10 5 Rthja=50C/W Rthja=100C/ 1 0 25 50 75 100 125 150 Figure 13 - Max. I load current (A) Vs Tamb (oC) IPS031R Figure 14 - Ids (A) Vs Protection Resp. Time (s) IPS031R 100 s ingle pulse m ax. curre nt 5 100 Hz rth=60C/W dT=25C 1kHz rth=60C/W dT=25C 5 100 10 10 1 1 0. 1 0.1 0. 1 0 Vbat = 14 V Tjini = T sd 0. 1 1 10 100 0. 01 1. 05 E1. 03 E1. 01 E1. E+01 1. E+03 Figure 15 - Iclamp (A) Vs Inductive Load (mH) Fig.16 - Transient Thermal Impedance (oC/W) Vs Time (s) - IPS031R 8 www.irf.com IPS031R 200 180 160 140 120 100 80 60 40 20 0 -50 -25 Iin,on Iin,off 0 25 50 75 100 125 150 120% 115% 110% 105% 100% 95% 90% 85% 80% -50 -25 Vin clam p @ 10m A 0 25 50 75 100 125 150 Vds clamp @ Isd Figure 17 - Input current (A) Vs Junction (oC) Figure 18 - Vin clamp and V clamp2 (%) Vs Tj (oC) 16 14 12 10 8 6 4 2 0 -50 Treset rise tim e fall time -25 0 25 50 75 100 125 150 Figure 19 - Turn-on, Turn-off, and treset (s) Vs Tj (oC) www.irf.com 9 IPS031R Case Outline 3-Lead D-Pak 01-6031 00 01-0003 03 (JEDEC TO252AA) 10 www.irf.com IPS031R Tape & Reel - D-PAK 01-3072 00 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 This device was designed and qualified peer automotive level (Q101) Data and specifications subject to change without notice. 6/1/2004 www.irf.com 11 |
Price & Availability of IPS031R
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |