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| B-30 01/99 IF1320 N-Channel Silicon Junction Field-Effect Transistor Low-Noise, High Gain Amplifier Absolute maximum ratings at TA = 25C Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Storage Temperature Range - 20 V 10 mA 225 mW 1.8 mWC - 65C to 200C At 25C free air temperature: Static Electrical Characteristics IF1320 Min Max Unit Process NJ132L Test Conditions Gate Source Breakdown Voltage Gate Reverse Current Gate Source Cutoff Voltage Drain Saturation Current (Pulsed) Dynamic Electrical Characteristics V(BR)GSS IGSS VGS(OFF) IDSS - 20 - 0.35 5 - 0.1 - 1.5 20 V nA V mA IG = - 1 A, VDS = OV VDS = OV, VGS = - 10V VDS = 10V, ID = 0.5 nA VDS = 10V, VGS = OV Common Source Forward Transconductance Common Source Input Capacitance Common Source Reverse Transfer Capacitance gfs Ciss Crss 15 20 5 Typ mS pF pF VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA VDS = 10V, ID = 5 mA f = 1 kHz f = 1 MHz f = 1 MHz Equivalent Short Circuit Input Noise Voltage eN 2.5 nV/Hz VDS = 10V, ID = 5 mA f = 1 kHz TO236AB Package Dimensions in Inches (mm) Pin Configuration 1 Drain, 2 Source, 3 Gate 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 www.interfet.com |
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