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UTC HLB124
NPN EPITAXIAL SILICON TRANSISTOR
NPN EPITAXIAL PLANAR TRANSISTOR
DESCRIPTION
The UTC HLB124 is designed for high voltage, high speed switching inductive circuits, and amplifier applications.
1
FEATURES
* High Speed Switching * Low Saturation Voltage * High Reliability
TO-220
1: BASE
2: COLLECTOR
3: EMITTER
*Pb-free plating product number: HLB124L
ABSOLUTE MAXIMUM RATINGS
(Ta=25) PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (PULSE) Base Current (DC) Base Current (PULSE) Total Power Dissipation (Tc=25) Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO Ic ICP IB IBP Pc TJ TSTG RATINGS 600 400 8 2 4 1 2 35 150 -40 ~ +150 UNIT V V V A A A A W
ELECTRICAL CHARACTERISTICS
(Ta=25, unless otherwise specified.) PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current SYMBOL BVCBO BVCEO BVEBO ICBO IEBO *VCE (sat) 1 C-E Saturation Voltage *VCE (sat) 2 *VBE (sat) 1 B-E Saturation Voltage *VBE (sat) 2 *hFE1 DC Current Gain *hFE2 *hFE3 Gain-Bandwidth Product fT *Pulse Test : Pulse Width 380s, Duty Cycle 2% TEST CONDITIONS IC = 1mA IC = 10mA IE = 1mA VCB = 600V VEB = 9V, IC = 0 IC = 0.1A, IB = 10mA IC = 0.3A, IB = 30mA IC = 0.1A, IB = 10mA IC = 0.3A, IB = 30mA VCE = 5V, IC = 0.3A VCE = 5V, IC = 0.5A VCE = 5V, IC = 1A VCE = 10V, IC = 0.3A, f=1MHz MIN 600 400 8 TYP MAX UNIT V V V 10 A 10 A 0.3 V 0.8 V 0.9 V 1.2 V 40
10 10 6 15
MHz
CLASSIFICATION OF HFE1
UTC
UNISONIC TECHNOLOGIES CO., LTD.
1
QW-R203-029,A
www.unisonic.com.tw
UTC HLB124
RANK Range
NPN EPITAXIAL SILICON TRANSISTOR
B1 10 ~ 17 B2 13 ~ 22 B3 18 ~ 27 B4 23 ~ 32 B5 28 ~ 37 B6 33 ~ 40
CHARACTERISTICS CURVE
Current Gain & Collector Current
100 100000
Saturation Voltage & Collector Current
Saturation Voltage (mV)
125 25
hFE
10
75
10000 100 0
75
100
125
25 VCE(sat) @ IC = 10IB
1 1 10 100
hFE @ VCE = 5V
1000
C
10 1 10
10000
100
1000
C
10000
Collector Current, I
(mA)
Collector Current, I
(mA)
Saturation Voltage & Collector Current
10000 1000
On Voltage & Collector Current
Saturation Voltage (mV)
VCE = 5V 75 25 On Voltage (mV)
100 1 10 100 1000 10000 10000
1000
125 VBE(sat) @ IC = 10IB
1 10 100 1000
100
Collector Current, I C (mA)
Collector Current (mA)
Capacitance & Reverse-Biased Voltage
100 10
Swithing Time & Collector Current VCC = 100V, IC = 5IB1 = 5IB2
Switching Time (s)
Capacitance (Pf)
10
Cob
Ton
1
TSTG Tf
1 1 10 100
0.1 0.1
1
10
Reverse Biased Voltage (V)
Collector Current (A)
UTC
UNISONIC TECHNOLOGIES CO., LTD.
2
QW-R203-029,A
www.unisonic.com.tw
UTC HLB124
10000
NPN EPITAXIAL SILICON TRANSISTOR
Safe operating Area
Collector Current (mA)
1000
PT = 1ms PT = 100ms PT = 1s
100
10
1 1 10 100 1000
Forward Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
UTC
UNISONIC TECHNOLOGIES CO., LTD.
3
QW-R203-029,A
www.unisonic.com.tw

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