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| GT50J327 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J327 Current Resonance Inverter Switching Application * * * * * * Enhancement mode type High speed : tf = 0.19 s (typ.) (IC = 50A) Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 50A) FRD included between emitter and collector Fourth generation IGBT TO-3P(N) (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100C @ Tc = 25C @ Tc = 100C @ Tc = 25C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 25 29 50 100 20 40 56 140 150 -55 to 150 Unit V V A A A 1.Gate 2.Collector(heatsink) 3.Emitter JEDEC JEITA TOSHIBA 2-16C1C W C C Weight: 4.6 g (typ.) Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (diode) Symbol Rth (j-c) Rth (j-c) Max 0.89 2.7 Unit C/W C/W Equivalent Circuit Collector Marking Part No. (or abbreviation code) Gate Emitter TOSHIBA GT50J327 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2005-02-09 GT50J327 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Switching time Turn-on time Fall time Turn-off time Diode forward voltage Reverse recovery time Symbol IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr IF = 15 A, VGE = 0 IF = 15 A, di/dt = -100 A/s Test Condition VGE = 25 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 50 mA, VCE = 5 V IC = 50 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz Resistive Load VCC = 300 V, IC = 50 A VGG = 15 V, RG = 39 (Note 1) Min 3.0 Typ. 1.9 2500 0.20 0.27 0.19 0.44 Max 500 1.0 6.0 2.3 Unit nA mA V V pF 0.32 s 2.0 0.2 V s Note 1: Switching time measurement circuit and input/output waveforms VGE 0 RG 0 VCC 0 VCE td (off) tf toff tr ton RL IC 90% 10% 10% 90% 90% 10% 2 2005-02-09 GT50J327 IC - VCE 100 Common emitter Tc = -40C 15 20 60 10 9 100 Common emitter Tc = 25C IC - VCE 10 15 20 60 8 40 9 (A) Collector current IC 40 8 20 VGE = 7 V 0 0 Collector current IC (A) 80 80 20 VGE = 7 V 1 2 3 4 5 0 0 1 2 3 4 5 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE 100 Common emitter Tc = 125C 20 10 100 9 80 Common emitter VCE = 5 V IC - VGE (A) 15 60 8 Collector current IC Collector current IC (A) VGE = 7 V 80 60 40 40 25 20 20 Tc = 125C -40 0 0 1 2 3 4 5 0 0 2 4 6 8 10 Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V) VCE (sat) - Tc 4 Common emitter VGE = 15 V 3 IC = 100 A 70 2 50 30 10 1 Collector-emitter saturation voltage VCE (sat) (V) 0 -40 0 40 80 120 160 Case temperature Tc (C) 3 2005-02-09 GT50J327 VCE, VGE - QG 500 Common emitter RL = 6 Tc = 25C 20 10000 C - VCE (V) VCE Gate-emitter voltage VGE (V) 400 16 Cies 1000 Collector-emitter voltage 300 VCE = 300 V 200 100 200 100 12 8 Gate-emitter voltage 100 Common emitter VGE = 0 f = 1 MHz 10 1 Tc = 25C 10 100 Coes Cres 1000 4 0 0 80 160 240 320 0 400 Gate charge QG (nC) Collector-emitter voltage VCE (V) Switching Time - RG 10 Common emitter VCC = 300 V IC = 50 A VGG = 15 V Tc = 25C 10 Switching Time - IC Common emitter VCC = 300 V RG = 39 VGG = 15 V Tc = 25C toff ton 0.1 tr tf 1 toff ton tr tf (s) (s) 1 Switching time 0.1 0.01 1 Switching time 1000 10 100 0.01 0 10 20 30 40 50 60 Gate resistance RG () Collector current IC (A) Safe Operating Area 1000 *: Single non-repetitive pulse Tc = 25C Curves must be derated linearly with increases in temperature. 1000 Reverse Bias SOA Tj < 125C = VGG = 20 V RG = 39 (A) 100 IC max (continuous) (A) Collector current IC IC max (pulsed) * 10 ms* 10 s* 100 Collector current IC 10 100 s* DC operation 1 ms* 10 1 1 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 10000 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 4 2005-02-09 GT50J327 ICmax - Tc 60 Common emitter VGE = 15 V 50 102 rth (t) - tw Tc = 25C 101 Diode stage 100 IGBT stage 10-1 ICmax 40 Maximum DC collector current 30 20 Transient thermal impedance rth (t) (C/W) (A) 10 10-2 0 25 50 75 100 125 150 10-3 10-5 10-4 10-3 10-2 10-1 100 101 102 Case temperature Tc (C) Pulse width tw (s) IF - VF 50 Common collector VGE = 0 40 50 Irr, trr - IF 500 300 (A) (A) Irr Peak reverse recovery current Forward current IF 30 10 trr 5 3 Irr Common collector di/dt = -100 A/s VGE = 0 Tc = 25C 4 8 12 16 100 20 50 30 10 Tc = 125C 25 -40 0 0 0.4 0.8 1.2 1.6 2.0 1 0 10 20 Forward voltage VF (V) Forward current IF (A) Cj - VR 300 Tc = 25C Irr, trr - di/dt Common collector IF = 15 A Tc = 25C (pF) 100 50 30 Irr (A) f = 1 MHz 200 10 trr 8 trr (ns) Peak reverse recovery current Cj Junction capacitance Reverse recovery time 6 10 5 3 100 4 Irr 2 1 1 3 5 10 30 50 100 300 500 0 0 0 40 80 120 160 200 Reverse voltage VR (V) di/dt (A/s) 5 2005-02-09 Reverse recovery time trr (ns) 30 GT50J327 RESTRICTIONS ON PRODUCT USE * * The information contained herein is subject to change without notice. 030619EAA The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. * * * 6 2005-02-09 |
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