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| GL496 GL496 s Features 1. High speed response (response frequency : 40MHz) 2. Peak emission wavelength p : TYP. 880 mm 3. Half intensity angle : 22 4. Lead bending type may be used. High Speed Infrared Emitting Diode s Outline Dimensions (Unit : mm) 2-C0.5 3.0 1.5 4.0 1.15 Transparent epoxy resin R-1.25 (1.7) 1. AV equipment 2. Personal computers 3. Portable information terminal equipment 1 (2.54) 0.45 17.5 s Applications 1.4 0.4 2 MIN0.5 1.55 2.8 1 2 1 Anode 2 Cathode s Absolute Maximum Ratings Parameter Forward current *1 Peak forward current Reverse voltage Power dissipation Operating temperature Storage temperature *2 Soldering temperature *1 Pulse width 100 s, Duty ratio=0.01 *2 For MAX. 5 seconds at the position of 1.4 mm from the resin edge (Ta=25C) Unit mA A V mW C C C Symbol Rating IF 50 0.5 IFM 4 VR 87.5 P - 25 to + 85 Topr Tstg - 40 to + 90 260 Tsol " In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device." GL496 s Electro-optical Characteristics Parameter Forward voltage Peak forward voltage Reverse current *3 Radiant intensity Radiant flux Peak emission wavelength Half intensity wavelength Terminal capacitance *4 Response frequency Half intensity angle Symbol VF VFM IR IE E p Ct fc Conditions IF = 50mA IFM = 0.5A VR = 3V IF = 50mA IF = 50mA IF = 50mA IF = 50mA VR = 0V,f = 1MHz IF = 50mA + 10mAp-p IF = 50mA MIN. 3.0 850 TYP. 1.55 2.6 10.0 12 880 50 60 40 22 MAX. 1.75 3.6 10 900 (Ta=25 C) Unit V V A mW/sr mW nm nm pF MHz *3 Value obtained by converting the value in power of radiant fluxes emitted at the solid angle of 0.01 sr (steradian) in the direction of mechanical axis of the lens portion into 1 sr or all those emitted from the light emitting diode. *4 Frequency to bring about -3dB reduction of modulated radiant intensity from 100kHz Fig. 1 Forward Current vs. Ambient Temperature 60 Fig. 2 Peak Forward Current vs. Duty Ratio Pulse width <=100 s T a = 25C 5000 Forward current I F (mA) 40 FM (mA) 1000 500 50 30 20 Peak forward current I 100 50 10 0 - 40 - 20 0 20 25 40 60 80 85 100 10 10 - 4 10 - 3 10 - 2 10 - 1 1 Ambient temperature T a (C) Duty ratio GL496 Fig. 3 Spectral Distribution 100 Fig. 4 Peak Emission Wavelength vs. Ambient Temperature 930 Relative radiant intensity (%) 80 Peak emission wavelength p (nm) I F =50mA Ta=25C IF=const 905 60 880 40 855 20 0 720 760 800 840 880 920 960 1000 1040 830 - 25 0 25 50 75 85 Wavelength (nm) Ambient temperature T a (C) Fig. 5 Forward Current vs. Forward Voltage 1000 Fig. 6 Relative Radiant Flux vs. Ambient Temperature 10 IF=const (mA) 100 Forward current I 25C Ta=75C 0C -25C Relative radiant flux F 1 10 50C 1 0 0.5 1 1.5 2 2.5 0.1 - 25 0 25 50 75 85 Forward voltage V F (V) Ambient temperature T a (C) Fig. 7 Radiant Intensity vs. Forward Current 1000 Ta=25C Fig. 8 Relative Radiant Intensity vs. Distance 100 Ta=25C Radiant intensity I E ( mW/sr ) 100 Relative radiant intensity (%) 10 10 DC Pulse (pulse width <=100 s) 1 1 0.1 1 10 100 1000 0.1 0.1 1 10 100 Forward current I F (mA) Distance to detector (mm) GL496 Fig. 9 Relative Radiant Intensity vs. Frequency 3 Ta=25C IF=50mA+10mAp-p Fig. 10 Relative Collector Current vs. Distance (Detector : PT414PI) 100 IF=50mA Ta=25C Relative radiant intensity (dB) 0 Relative collector current (%) 10 -3 1 -6 -9 0.1 1 10 40 100 0.1 0.1 1 10 100 Frequency f (MHz) Distance between emitter and detector d (mm) Fig. 11 Radiation Diagram - 20 - 30 - 10 0 100 ( Ta = 25C) 10 20 30 Relative radiant intensity (%) 80 - 40 60 40 - 50 - 60 - 70 - 80 - 90 50 40 60 20 70 80 90 0 Angular displacement q Please refer to the chapter "Precautions for Use". (Page 78 to 93) |
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