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Bulletin I27209 01/06
GB75YF120N
IGBT FOUR PAK MODULE
Features
* Square RBSOA * HEXFRED low Qrr, low Switching Energy * Positive VCE(on) Temperature Coefficient * Copper Baseplate * Low Stray Inductance Design
VCES = 1200V IC = 75A @ TC = 67C VCE(on) typ. = 3.4V
ECONO2 4PAK
Benefits
* Benchmark Efficiency for SMPS appreciation in particular HF welding * Rugged Transient Performance * Low EMI, Requires Less Snubbing * Direct Mounting to Heatsink space saving * PCB Solderable Terminals * Low Junction to Case Thermal Resistance
Absolute Maximum Ratings
Parameter
VCES IC @ Tc=25C IC @ Tc=80C ICM ILM IF @ Tc=25C IF @ Tc=80C IFM VGE PD @ Tc=25C PD @ Tc=80C TJ TSTG VISOL Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current (Ref. Fig. C.T.5) Clamped Inductive Load Current Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current Gate-to-Emitter Voltage Maximum Power Dissipation (IGBT) Maximum Power Dissipation (IGBT) Maximum Operating Junction Temperature Storage Temperature Range Isolation Voltage
Max.
1200 100 67 200 200 40 25 150 20 480 270 150 -40 to +125 AC 2500 (MIN)
Units
V A
V W C V
Thermal and Mechanical Characteristics
Parameter
RJC (IGBT) RJC (Diode) RCS (Module) Junction-to-Case IGBT Junction-to-Case Diode Case-to-Sink, flat, greased surface Mounting Torque (M5) Weight
Min
2.7 -
Typical
0.05 170
Maximum
0.26 1.00 3.3 -
Units
C/W
N*m g
1
GB75YF120N
Bulletin I27209 01/06
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
BV(CES) V CE(ON) Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Voltage Min. Typ. Max. Units Conditions 1200 V VGE = 0 IC = 500A VGE(th) V GE (th)/T J ICES V FM Gate Threshold Voltage Thresold Voltage temp. coefficient Zero Gate Voltage Collector Current Diode Forward Voltage Drop 4.0 IGES Gate-to-Emitter Leakage Current 3.4 3.8 4.0 4.53 5.0 -11 7 580 3.9 4.43 4.37 5.02 4.0 4.5 4.5 5.1 6.0 250 2000 5.0 5.8 5.4 6.4 200 nA V A V IC = 75A VGE = 15V IC = 100A VGE = 15V IC = 75A VGE = 15V TJ = 125C IC = 100A VGE = 15V TJ = 125C VCE = VGE IC = 250A mV/C VCE = VGE IC = 1mA (25C-125C) VGE = 0 VCE = 1200V VGE = 0 VCE = 1200V Tj = 125C IF = 75A IF = 100A IF = 75A Tj = 125C IF = 100A Tj = 125C VGE = 20V
Switching Characteristics @ TJ = 25C (unless otherwise specified)
Parameter QG QGE QGC EON EOFF ETOT EON EOFF ETOT td(on) tr td(off) tf RBSOA SCSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Reverse Bias Safe Operating Area Short Circuit Safe Operating Area Min. Typ. Max. Units Conditions 630 65 250 1505 2411 3916 2248 3351 7599 169 71 393 136 Tj = 150C IC = 150A RG =10 VGE = 15V to 0 10 s Tj = 150C VCC = 900V VP = 1200V RG = 10 Irr t rr Qrr Diode Peak Rev. Recovery Current Diode Rev. Recovery Time Total Rev. Recovery Charge Energy losses include "tail" and diode reverse recovery.
IC = 50A nC J VCC = 600A VGE = 15V IC = 50A VCC = 600V VGE = 15V RG = 4.7 L = 500H Tj = 25C J IC = 50A VCC = 600V VGE = 15V RG = 4.7 L = 500H Tj = 125C ns IC = 50A VCC = 600V VGE = 15V RG = 4.7 L =500H Tj = 125C
FULL SQUARE
VGE = 15V to 0
1.45 2.35
2.5 4.0
A s s C C
Tj = 25C Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C VCC = 600V IF = 75A dI/ dt = 10A/s
0.401 0.5 0.655 0.8 0.181 0.4 0.54 1.5
2
GB75YF120N
Bulletin I27209 01/06
160 140
500
400
120 100
80 60 40 20 0 0 20 40 60 80 100 120
PD (W)
IC (A)
300
200
100
0 0 20 40 60 80 100 120 140 160
TC (C) Fig. 1 - Maximum DC Collector Current vs. Case Temperature
TC (C) Fig. 2 - Power Dissipation vs. Case Temperature
1000
1000
100
100
1
PD (W)
10
10
IC (A)
0.1
0.01 1 10 100 1000 10000
1 10 100 1000 10000
VCE (V) Fig. 3 - Forward SOA TC = 25C; TJ 150C
TC (C)
Fig. 4 - Reverse Bias SOA TJ = 150C; VGE =15V
3
GB75YF120N
Bulletin I27209 01/06
160 140 120 100
VGE = 18V VGE = 15V VGE = 12V VGE = 9V
160 140 120 100 VGE = 18V VGE = 15V VGE = 12V VGE = 9V
ICE (A)
80 60 40 20 0 0 1 2 3 4 5 6
ICE (A)
80 60 40 20 0 0 1 2 3 4 5 6 7 8
VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = 25C; tp = 500s
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics TJ = 125C; tp = 500s
160 140 120 100 80 60 40 20 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 25C 125C
20 18 16 14 ICE = 75A ICE = 50A ICE = 25A
VCE (V)
IF (A)
12 10 8 6 4 2 0 7 9 11 13 15 17 19
VF (V)
VGE (V) Fig. 8 - Typical VCE vs. VGE TJ = 25C
Fig. 7 - Typ. Diode Forward Characteristics tp = 500s
4
GB75YF120N
Bulletin I27209 01/06
20 18 16 14 ICE = 75A ICE = 50A ICE = 25A
300 250 200 TJ = 25C TJ = 125C
VCE (V)
10 8 6 4 2 0 7 9 11 13 15 17 19
ICE (A)
12
150 100 50 0 5 6 7 8 9 10 11 12
VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = 125C
VGE (V) Fig. 10 - Typ. Transfer Characteristics VCE = 20V; tp = 500s
1
5.5 5
TJ = 125C
4.5
TJ = 25C
0.1
ICES (mA)
Vgeth (V)
4 3.5 3 TJ = 125C
0.01
TJ = 25C 0.001 400 600 800 1000 1200
2.5 2 0 0.2 0.4 0.6 0.8 1
VCES (V) Fig. 11 - Typ Zero Gate Voltage Collector Current
IC (mA) Fig. 12 - Typ Threshold Voltage
5
GB75YF120N
Bulletin I27209 01/06
9 8 7 6
1
tdOFF
5 4 3 2 1 0 20 40 60
EOFF
Switching Time (s)
tdON
Energy (mJ)
0.1
tF tR
EON
0.01
80
100
120
140
160
20
40
60
80
100
120
140
160
IC (A) Fig. 13 - Typ. Energy Loss vs. IC TJ = 125C; L=200H; VCE= 600V RG= 5; VGE= 15V
IC (A) Fig. 14 - Typ. Switching Time vs. IC TJ = 125C; L=200H; VCE= 600V RG= 5; VGE= 15V
12
800 700 600
10
8
125C
tRR (ns)
IRR (A)
500 400 300
125C
6
4
25C
200
2
25C
100
0 0 20 40 60 80 100
0 0 20 40 60 80 100
dIF/ dt (A/s) Fig. 15- Typical Diode IREC vs. diF/dt VCC= 600V; IF= 50A
dIF/ dt (A/s) Fig. 16- Typical Diode tRR vs. diF/dt VCC= 600V; IF= 50A
6
GB75YF120N
Bulletin I27209 01/06
1600 1400 1200 1000
16
125C
14 12 10 typical value
QRR (nC)
VGE (V)
25C
800 600 400 200 0 0 20 40 60 80 100
8 6 4 2 0 0 100 200 300 400 500 600 700
dIF/ dt (A/s) Fig. 17- Typical Diode QRR vs. diF/dt VCC= 600V; IF= 50A
QG, Total Gate Charge (nC) Fig. 18 - Typical Gate Charge vs. VGE ICE = 5.0A; L = 600H
1
D = 0.50
Thermal Response (ZthJC )
0.1
0.20 0.10 0.05
0.01
0.02 0.01
0.001
0.0001
SINGLE PULSE ( THERMAL RESPONSE )
1E-005 1E-006
1E-005
VGE (V)
0.0001
0.001
0.01
0.1
1
10
t1, Rectangular Pulse Duration (sec) Fig 19 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
7
GB75YF120N
Bulletin I27209 01/06
10 D = 0.50 0.20
Thermal Response (ZthJC )
1
0.10
0.1
VGE (V)
0.01
0.05 0.02 0.01
SINGLE PULSE ( THERMAL RESPONSE )
0.001 1E-006
1E-005
0.0001
0.001
t1, Rectangular Pulse Duration (sec) Fig 20 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
L
L
0
DUT 1K
VCC
80 V Rg
DUT
1000V
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
VCC ICM
Driver
D C
diode clamp / DUT
R=
L
900V
- 5V DUT / DRIVER
Rg
DUT
DUT
VCC
VCC
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.5 - Resistive Load Circuit
8
GB75YF120N
Bulletin I27209 01/06
Econo2 4Pak Package Outline
Dimensions are shown in millimeters (inches)
1.25
1.25
48,49
21,22
40 41 5,6,7 36 37
28 29 15,16,17
32 33
INV 600V 15A
Made in Italy
(beta sample)
3M01BT / 0344
46,47
23,24
Data and specifications subject to change without notice. This product has been designed and qualified for Industrial market. Qualification Standards can be found on IR's Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/06
9

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