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PRELIMINARY
* PERFORMANCE (1.8 GHz) 36.5 dBm Output Power (P1dB) 10.5 dB Power Gain (G1dB) 49 dBm Output IP3 10V Operation 45% Power-Added Efficiency Evaluation Boards Available Additional Design Data Available on Website Usable Gain to 4GHz DESCRIPTION AND APPLICATIONS
FPD4000AF
4W PACKAGED POWER PHEMT
SEE PACKAGE OUTLINE FOR MARKING CODE
*
The FPD4000AF is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT), optimized for power applications in L-Band. The high power flangemount package has been optimized for low electrical parasitics and optimal heatsinking. Typical applications include drivers or output stages in PCS/Cellular base station transmitter amplifiers, as well as other power applications in WLL/WLAN amplifiers. * ELECTRICAL SPECIFICATIONS AT 22C
Parameter Power at 1dB Gain Compression Power Gain at dB Gain Compression Maximum Stable Gain S21/S12 Power-Added Efficiency at 1dB Gain Compression 3 -Order Intermodulation Distortion
rd
Symbol P1dB G1dB MSG PAE IP3
Test Conditions VDS = 10V; IDQ = 720 mA S and L tuned for Optimum IP3 VDS = 10V; IDQ = 720 mA S and L tuned for Optimum IP3 VDS = 10 V; IDQ = 720 mA PIN = 0dBm, 50 system VDS = 10V; IDQ = 720 mA S and L tuned for Optimum IP3 VDS = 10V; IDQ = 720 mA S and L tuned for Optimum IP3 POUT = 25.5 dBm (single-tone level)
Min 35.5 9.5
Typ 36.5 10.5 19 45
Max
Units dBm
RF SPECIFICATIONS MEASURED AT f = 1.8 GHz USING CW SIGNAL
dB %
-47
-44
dBc
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage Thermal Resistivity (channel-to-case)
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IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD| CC
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -3 V VDS = 1.3 V; IDS = 8 mA IGS = 8 mA IGD = 8 mA See Note on following page
1.9
2.3 3.6 2.4 70
2.65
A A S
170 1.4
A V V V C/W
0.7 6 20
0.9 8 22 12
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Revised: 08/09/04 Email: sales@filcsi.com
PRELIMINARY
* RECOMMENDED OPERATING BIAS CONDITIONS Drain-Source Voltage: From 5V to 10V Quiescent Current: From 25% IDSS to 55% IDSS ABSOLUTE MAXIMUM RATINGS1
Parameter Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current RF Input Power
2
FPD4000AF
4W PACKAGED POWER PHEMT
*
Symbol VDS VGS IDS IG PIN TCH TSTG PTOT Comp.
3
Test Conditions -3V < VGS < +0V 0V < VDS < +8V For VDS > 2V Forward / Reverse current Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions
Min
Max 12 -3 IDSS +25/-4 1.5 175
Units V V mA mA W C C W dB %
Channel Operating Temperature Storage Temperature Total Power Dissipation Gain Compression
1
-40
150 12 5
Simultaneous Combination of Limits 2 or more Max. Limits 80 2 TAmbient = 22C unless otherwise noted Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously
Notes: * Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. * Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power * Total Power Dissipation to be de-rated as follows above 22C: PTOT= 12 - (0.083W/C) x TPACK where TPACK = source tab lead temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55C source lead temperature: PTOT = 12 - (0.083 x (55 - 22)) = 9.3W * Note on Thermal Resistivity: The nominal value of 12C/W is measured with the package mounted on a large heatsink with thermal compound to ensure adequate contact. The package temperature is referred to the Source flange.
*
HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filcs.com
Revised: 08/09/04 Email: sales@filcsi.com
PRELIMINARY
FPD4000AF
4W PACKAGED POWER PHEMT
*
BIASING GUIDELINES Active bias circuits provide good performance stabilization over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate. Contact your Sales Representative for additional information. Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices such as the FPD4000AF. Self-biased circuits employ an RF-bypassed Source resistor to provide the negative Gate-Source bias voltage, and such circuits provide some temperature stabilization for the device. A nominal value for circuit development is 0.7 for the recommended 720mA operating point. This approach will require a DC Source resistor capable of at least 365mW dissipation. The recommended 720mA bias point is nominally a Class AB mode. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point.
*
PACKAGE OUTLINE (dimensions in millimeters - mm)
PACKAGE MARKING CODE
Example: f1ZD P2F
f = Filtronic 1ZD = Lot and Date Code P2F = Status, Part Code, Part Type Status: D=Development P = Production Part Code denotes model (e.g. FPD4000AF) Part Type: F = FET (pHEMT)
All information and specifications subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766
http:// www.filcs.com
Revised: 08/09/04 Email: sales@filcsi.com
PRELIMINARY
*
FPD4000AF
4W PACKAGED POWER PHEMT
TYPICAL RF PERFORMANCE (VDS = 10V IDQ = 720 mA f = 2000 MHz):
Power Transfer Characteristic
3.5 36.0 Pout 34.0 2.5 Comp Point 3.0
Output Power (dBm)
32.0 2.0 30.0
1.5
28.0
1.0
26.0
0.5
24.0
0.0
22.0 10.0
-0.5 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0
Input Power (dBm)
Drain Efficiency and PAE
70.0% 70.0%
60.0%
60.0%
PAE
Eff. 40.0%
40.0%
30.0%
30.0%
20.0%
20.0%
10.0%
10.0%
.0% 10.0
.0% 12.0 14.0 16.0 18.0 20.0 22.0 24.0 26.0 28.0
Input Power (dBm)
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Drain Efficiency (5)
50.0%
50.0%
PAE (%)
Gain Compression (dB)
PRELIMINARY
FPD4000AF
4W PACKAGED POWER PHEMT
IM Products vs. Input Power
-15.0
32.0 -20.0
Pout
30.0
Im3, dBc
-25.0
Output Power (dBm)
-30.0 28.0 -35.0
26.0
-40.0
-45.0 24.0 -50.0
22.0 11.0 13.0 15.0 17.0 19.0 21.0
-55.0
Input Power (dBm)
Note: Graph above shows Input and Output power as single carrier or single-tone levels.
FPD4000AF IP3 CONTOURS 2 GHz
0.6
IP3_dBm = 48 dBm
0. 4
IP3_dBm = 46 dBm
2. 0
Swp Max 189
IP3_dBm = 50 dBm
0.8
1.0
0 3.
4.0
IP3_dBm 5.0
10.0
= 44 dBm
IP3_dBm = 52 dBm -0.4
-0. 6
-0.8
-1.0
.0 -2
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-4. 0
IP3_dBm = 54 dBm
-5.0
-0.2
-10.0
IP3_dBm = 56 dBm
NOTE: IP3 contours generated with PIN = 11dB back-off from P1dB. Local maximum for best linearity located at: S = 15 - j12 and L 15 - j15 (IP3 value labels on contours are fitted values, and do not represent actual device performance.) Swp Min
-3 .0
10.0
0.2
0.4
0.6
0.8
1.0
2.0
3.0
4.0
5.0
IP3_dBm = 58 dBm
0
IP3_dBm = 42 dBm
1
Revised: 08/09/04 Email: sales@filcsi.com
IM Products (dBc)
0.2
PRELIMINARY
FPD4000AF
4W PACKAGED POWER PHEMT
FPD4000AF ADJACENT AND ALTERNATE CHANNEL POWER RATIOS WCDMA BTS FORWARD 10.15 dB Pk/Avg 0.001% f = 2.5 GHz STD. BIAS
0 35
-10
30
-20
25 Output Power (dBm)
ACPR (dBc)
-30
-40
ADJ CHANNEL (5 MHz) ALT CHANNEL (10 MHz) OUTPUT POWER
20
15
-50
10
-60
5
-70 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Input Power (dBm)
0
ACPR measurement at 4 dB back-off from P1dB with WCDMA BTS Forward modulation:
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Revised: 08/09/04 Email: sales@filcsi.com
PRELIMINARY
FPD4000AF
4W PACKAGED POWER PHEMT
FPD4000AF P1dB CONTOURS 2 GHz
0. 6
Swp Max 194
2. 0
0.8
1.0
Pout_dBm = 36 dBm
0.2 0.4 0.6 0.8 1.0 0
Pout_dBm = 34 dBm
-0.2
-10.0
10.0
2.0
3.0
4.0
5.0
. -0
4
-0.
6
.0 -2
Pout_dBm = 30 dBm
-0.8
Pout_dBm = 26 dBm
Swp Min 1
Pout_dBm = 28 dBm
FPD4000AF I-V Curves
2.5
-1.0
VGS = 0V
2.0 Drain-Source Current (A)
VGS = -0.25V
1.5
VGS = -0.50V
1.0
VGS = -0.75V
0.5
VGS = -1.0V
0.0 0.0 2.0 4.0 6.0 8.0 10.0 12.0 Drain-Source Voltage (V)
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-4 . 0
Pout_dBm = 32 dBm
-3 .0
-5.0
0.
4
3.0
NOTE: 4.0 Power contours measured at constant 5.0 input power, level set to meet nominal P1dB rating at optimum 10.0 match point. Optimum match: S = 3 - j11.5 and L = 15 - j6.5
0.2
Revised: 08/09/04 Email: sales@filcsi.com
PRELIMINARY
* RF PERFORMANCE OVER FREQUENCY:
FPD4000AF
4W PACKAGED POWER PHEMT
30
Max Stable Gain FPD4000AF
20
MSG S21
10
0
-10
-20 1 2 3 4 5 6 7 8 Frequency (GHz) 9 10 11 12
Note: The FPD4000AF is suitable for applications up to 4 GHz.
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http:// www.filcs.com
Revised: 08/09/04 Email: sales@filcsi.com
PRELIMINARY
* STANDARD EVALUATION BOARD (1.70-1.85 GHZ):
FPD4000AF
4W PACKAGED POWER PHEMT
Vg
C6
Vd
C10
C5 C2 C1 C3
R1 C4 Q1 C7
C9 C8
RF IN
4 W PA TB2
NOTE: AutoCAD drawing available on Website
Bill of Materials for Evaluation Board, FPD4000AF EV-BL-000026-002-A Part Number Description ATC600S0R9JW250 Capacitor, 0.9 pF, 0603, ATC 600, tol. +5% ATC600S3R0JW250 Capacitor, 3.0 pF, 0603, ATC 600, tol. +5% ATC600S1R8JW250 Capacitor, 1.8 pF, 0603, ATC 600, tol. +5% ATC600S1R0JW250 Capacitor, 1.0 pF, 0603, ATC 600, tol. +5% ATC600S330JW250 Capacitor, 33 pF, 0603, ATC 600, tol. +5% T491B105M035AS7015 Capacitor, 1 F, SMD-B, Kemet, tol. +20% ATC600S1R5JW250 Capacitor, 1.5 pF, 0603, ATC 600, tol. +5% ATC600S330JW250 Capacitor, 33 pF, 0603, ATC 600, tol. +5% ATC600S330JW250 Capacitor, 33 pF, 0603, ATC 600, tol. +5% T491B105M035AS7015 Capacitor, 1 F, SMD-B, Kemet, tol. +20% RCI-0603-10R1J Resistor, 100 , 0603, IMS, tol. +5% FPD4000AF Packaged Discrete pHEMT, Filtronic PC-SP-000022-002 PCB, FPD4000AF Eval Board, 2 GHz 142-0711-841 Connector, RF, SMA End Launch, Jack Assy, Johnson AMP-103185-2 Connector, DC, 0.100 on center, 0.025 sq. posts, Tyco TF-SP-000025 Test Fixture Base, Flange Mount Package, 2 GHz Screw, #2-56
Designator C1 C2 C3 C4 C5 C6 C7 C8 C9 C10 R1 Q1
Quantity 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 1 20
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Revised: 08/09/04 Email: sales@filcsi.com

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