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FMBA56
Discrete POWER & Signal Technologies
FMBA56
C2 E1 C1
B2 E2
pin #1 B1
SuperSOTTM-6
Mark: .2G
PNP Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
Absolute Maximum Ratings*
Symbol
VCES VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
80 80 4.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
FMBA56 700 5.6 180
Units
mW mW/C C/W
(c) 1998 Fairchild Semiconductor Corporation
FMBA56
PNP Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)CBO V(BR)EBO ICEO ICBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 A, IE = 0 IE = 100 A, IC = 0 VCE = 60 V, IB = 0 VCB = 80 V, IE = 0 80 80 4.0 0.1 0.1 V V V A A
ON CHARACTERISTICS
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 100 mA, IB = 10 mA IC = 100 mA, VCE = 1.0 V 100 100 0.25 1.2 V V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 100 mA, VCE = 1.0 V, f = 100 MHz 125 MHz
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Typical Characteristics
300
VCESAT- COLLECTOR EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
VCE = 1V
250
125 C
Collector-Emitter Saturation Voltage vs Collector Current
0.8 = 10 0.6
200 150 100 50 0.001 0.01 0.1 I C - COLLECTOR CURRENT (A)
25 C - 40 C
0.4
25 C
0.2
- 40 C 125 C
0 10
100 I C - COLLECTOR CURRENT (mA)
FMBA56
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1.2
VBEON - BASE EMITTER ON VOLTAGE (V)
VBESAT- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
= 10
Base Emitter ON Voltage vs Collector Current
1.2 1 0.8 0.6 0.4 0.2 0 0.1 V CE = 1V
25 C 125 C - 40 C
1
- 40 C
0.8
25 C 125 C
0.6
0.4 10
100 I C - COLLECTOR CURRENT (mA)
1000
1 10 100 I C - COLLECTOR CURRENT (mA)
1000
10 VCB = 60Vz 1
V CE - COLLECTOR-EMITTER VOLTAGE (V)
Collector-Cutoff Current vs. Ambient Temperature
I CBO- COLLECTOR CURRENT (nA)
Collector Saturation Region
10
8
T
A
= 25C
6
0.1
IC =
4
1 mA
10 mA
100 mA
0.01
2
0.001 25
50 75 100 TA - AMBIENT TEMPERATURE ( C)
125
0 3000
5000
10000
20000
30000
50000
I B - BASE CURRENT (uA)
f T - GAIN BANDWIDTH PRODUCT (MHz)
Input and Output Capacitance vs Reverse Voltage
f = 1.0 MHz
100
Gain Bandwidth Product vs Collector Current
40
VCE = 5V
30
CAPACITANCE (pF)
C ib
20
Cob
10
0 1 10 20 50 100
0.1
1
10
100
V CE - COLLECTOR VOLTAGE(V)
I
C
- COLLECTOR CURRENT (mA)
FMBA56
PNP Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Power Dissipation vs Ambient Temperature
1 PD - POWER DISSIPATION (W)
0.75
SOT-6
0.5
0.25
0
0
25
50 75 100 o TEMPERATURE ( C)
125
150

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