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FMBA06
Discrete POWER & Signal Technologies
FMBA06
C2 E1 C1
B2 E2
pin #1 B1
SuperSOTTM-6
Mark: .1G
NPN Multi-Chip General Purpose Amplifier
This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33.
Absolute Maximum Ratings*
Symbol
VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous
TA = 25C unless otherwise noted
Parameter
Value
80 80 4.0 500 -55 to +150
Units
V V V mA C
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
PD RJA
TA = 25C unless otherwise noted
Characteristic
Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient
Max
FMBA06 700 5.6 180
Units
mW mW/C C/W
(c) 1998 Fairchild Semiconductor Corporation
FMBA06
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol Parameter
TA = 25C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V(BR)CEO V(BR)EBO ICEO ICBO Collector-Emitter Sustaining Voltage* IC = 1.0 mA, IB = 0 Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current IE = 100 A, IC = 0 VCE = 60 V, IB = 0 VCB = 80 V, IE = 0 80 4.0 0.1 0.1 V V A A
ON CHARACTERISTICS
hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 10 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 100 mA, IB = 10 mA IC = 100 mA, VCE = 1.0 V 100 100 0.25 1.2 V V
SMALL SIGNAL CHARACTERISTICS
fT Current Gain - Bandwidth Product IC = 10 mA, VCE = 2.0 V, f = 100 MHz 150 MHz
*Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Typical Characteristics
VCESAT- COLLECTOR EMITTER VOLTAGE (V)
h FE - TYPICAL PULSED CURRENT GAIN
Typical Pulsed Current Gain vs Collector Current
200
125 C
Collector-Emitter Saturation Voltage vs Collector Current
0.5 0.4 0.3 0.2 0.1
- 40 C
VCE = 1V
= 10
150
25 C
125 C
100
- 40 C
25 C
50
0.001
0.01 0.1 I C - COLLECTOR CURRENT (A)
0 0.1
1 10 100 I C - COLLECTOR CURRENT (mA)
1000
FMBA06
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
1
= 10
VBEON - BASE EMITTER ON VOLTAGE (V)
V BESAT- BASE EMITTER VOLTAGE (V)
Base-Emitter Saturation Voltage vs Collector Current
Base Emitter ON Voltage vs Collector Current
1 0.8 0.6 0.4 0.2 0 VCE = 5V
- 40 C 25 C 125 C
0.8
- 40 C 25 C 125 C
0.6
0.4 0.1 1 10 100 I C - COLLECTOR CURRENT (mA) 1000
1
10 100 I C - COLLECTOR CURRENT (mA)
1000
V CE - COLLECTOR-EMITTER VOLTAGE (V)
Collector-Cutoff Current vs. Ambient Temperature
ICBO- COLLECTOR CURRENT (nA) 10 V 1
CB
Collector Saturation Region
2
T A = 25C
= 80 V
1.5
1
0.1
0.01
0.5
IC =
1 mA
10 mA
100 mA
0.001 25
50 75 100 TA - AMBIENT TEMPERATURE ( C)
P 33
125
0 4000 10000 20000 30000 50000
I B - BASE CURRENT (uA)
BVCER - BREAKDOWN VOLTAGE (V)
Collector-Emitter Breakdown Voltage with Resistance Between Emitter-Base
117
Input and Output Capacitance vs Reverse Voltage
100
f = 1.0 MHz
CAPACITANCE (pF)
116 115 114 113 112 111 0.1
C ib
10
C ob
1
1
10
100
1000
0.1 0.1
1
10
100
RESISTANCE (k )
V CE - COLLECTOR VOLTAGE(V)
FMBA06
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
f T - GAIN BANDWIDTH PRODUCT (MHz)
Gain Bandwidth Product vs Collector Current
400 350 300 250 200 150 100 1 10 20 50 100
Power Dissipation vs Ambient Temperature
1 PD - POWER DISSIPATION (W)
Vce = 5V
0.75
SOT-6
0.5
0.25
0
0
25
I
C
- COLLECTOR CURRENT (mA)
50 75 100 o TEMPERATURE ( C)
125
150

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