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| FLM5359-35F C-Band Internally Matched FET FEATURES High Output Power: P1dB=45.5dBm(Typ.) High Gain: G1dB=9.0dB(Typ.) High PAE: add=35%(Typ.) Broad Band: 5.3~5.9GHz Impedance Matched Zin/Zout = 50 Hermetically Sealed Package DESCRIPTION The FLM5359-35F is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50 system. ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25C) Item Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature Symbol VDS VGS PT Tstg Tch Rating 15 -5 115.4 -65 to +175 175 Unit V V W oC oC RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25C) Item DC Input Voltage Forward Gate Current Reverse Gate Current Symbol VDS IGF IGR RG=13 R G=13 Condition Limit Unit V mA mA 10 107.2 -23.2 ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25C) Item Drain Current Transconductance Pinch-off Voltage Gate-Source Breakdown Voltage Symbol IDSS gm Vp VGSO P1dB G1dB Idsr add G Rth T ch Test Conditions VDS=5V, VGS=0V VDS=5V, IDS=8.0A VDS=5V, IDS=960mA IGS =-960A V DS =10V f=5.3 - 5.9 GHz IDS =0.5Idss (Typ.) Zs=ZL=50 Min . -1.0 -5.0 45.0 8.0 - Limit Typ. 16.0 8000 -2.0 45.5 9.0 8.5 35 1.1 - Max. 24.0 -3.5 9.5 1.2 1.3 100 Unit A mS V V dBm dB A % dB o Output Power at 1dB G.C.P . Power Gain at 1dB G.C.P. Drain Current Power-Added Efficiency Gain Flatness Thermal Resistance Channel Temperature Rise Channel to Case 10V X Idsr X Rth - C/W o C CASE STYLE: IK ESD Class G.C.P.:Gain Compression Point, S.C.L.:Single Carrier Level 2000V~ Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k) Edition 1.3 September 2004 1 FLM5359-35F C-Band Internally Matched FET POWER DERATING CURVE OUTPUT POWER & POWER ADDED EFFICIENCY vs INPUT POWER Vds=10V, Ids=0.5Idss, f=5.6GHz 50 48 100 90 80 120 100 Output Power [dBm] Total Power Dissipation [W] 46 44 42 40 38 36 34 32 30 80 60 40 20 0 0 50 100 150 200 Case Temperature [OC] Pout 70 60 50 P.A.E. 40 30 20 10 0 24 26 28 30 32 34 36 38 40 Input Power [dBm] OUTPUT POWER vs FREQUENCY VDS=10V, IDS=0.5 Idss 47 P1dB 46 45 44 43 Pin=38dBm Output Power [dBm] 36dBm 34dBm 42 41 40 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 Frequency [GHz] 32dBm 2 Power Added Efficiency [%] FLM5359-35F C-Band Internally Matched FET S-PARAMETER +50j +25j 10 25 +90 +100j +10j 5. H z 3G 5. 9 +250j 5.9 5. 6 0 5. 6 180 4 2 Scale for |S21| 5.6 5.9 0 5.3GHz 5.3GHz -10j 5. H z 3G 5. -250j 0.2 5.6 -25j -50j -100j S 11 S 22 0.4 -90 Scale for |S 12| S 12 S 21 VDS=10V, IDS=0.5Idss Freq [GHz] 5.1 5.2 5.3 5.4 5.5 5.6 5.7 5.8 5.9 6 6.1 S11 MAG ANG 0.55 -176.35 0.51 158.56 0.46 130.78 0.43 100.35 0.40 67.00 0.38 33.18 0.37 -2.60 0.36 -37.11 0.36 -70.87 0.37 -103.18 0.39 -132.38 S21 MAG 2.67 2.90 3.14 3.34 3.48 3.53 3.49 3.33 3.13 2.88 2.64 S12 MAG 0.04 0.05 0.06 0.07 0.08 0.09 0.10 0.10 0.10 0.09 0.09 S22 MAG ANG 0.60 -94.10 0.55 -108.11 0.49 -124.14 0.42 -142.79 0.33 -165.42 0.25 162.44 0.22 113.75 0.28 68.08 0.38 41.18 0.46 24.47 0.52 12.40 ANG 21.09 2.47 -16.92 -37.44 -58.64 -80.56 -102.21 -123.77 -144.23 -163.44 178.04 ANG -14.96 -40.60 -64.94 -86.42 -109.29 -131.37 -153.13 -174.77 164.53 144.50 127.05 3 FLM5359-35F C-Band Internally Matched FET Package Out Line Case Style : IK PIN ASSIGMENT 1 : GATE 2 : SOURCE 3 : DRAIN 4 : SOURCE Unit : mm 4 FLM5359-35F C-Band Internally Matched FET For further information please contact : CAUTION Eudyna Devices USA Inc. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. TEL: (408) 232-9500 FAX: (408) 428-9111 www.us.eudyna.com Eudyna Devices Europe Ltd. Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 Eudyna Devices Asia Pte. Ltd. Hong Kong Branch Rm.1101,Ocean Centre, 5 Canton Road Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-2377-0227 FAX: +852-2377-3921 Eudyna Devices Inc. 1000 Kamisukiahara, showa-cho Nakakomagun, Yamanashi 409-3883, Japan (Kokubo Industrial Park) TEL +81-55-275-4411 FAX +81-55-275-9461 Sales Division 1, Kanai-cho, Sakae-ku Yokohama, 244-0845, Japan Eudyna Devices Inc. products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: Do not put these products into the mouth. Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these byproducts are dangerous to the human body if inhaled, ingested, or swallowed. Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. Eudyna Devices Inc. reserves the right to change products and specifications without notice.The information does not convey any license under rights of Eudyna Devices Inc. or others. (c) 2004 Eudyna Devices USA Inc. Printed in U.S.A. TEL +81-45-853-8156 FAX +81-45-853-8170 5 |
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