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| FJY4008R PNP Epitaxial Silicon Transistor March 2007 FJY4008R PNP Epitaxial Silicon Transistor Features * Switching circuit, Inverter, Interface circuit, Driver Circuit * Built in bias Resistor (R1=47K, R2=22K) * Complement to FJY3008R Eqivalent Circuit C C E S58 B E B SOT - 523F Absolute Maximum Ratings * Symbol VCBO VCEO VEBO IC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Ta = 25C unless otherwise noted Parameter Value -50 -50 -10 -100 -55~150 150 200 Units V V V mA C C mW TSTG TJ PC Storage Temperature Range Junction Temperature Collector Power Dissipation, by RJA * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. Thermal Characteristics* T =25C unless otherwise noted a Symbol RJA * Minimum land pad size. Parameter Thermal Resistance, Junction to Ambient Max 600 Units C/W Electrical Characteristics* Symbol V(BR)CBO V(BR)CEO ICBO hFE VCE(sat) fT Ccb VI(off) VI(on) R1 R1/R2 TC = 25C unless otherwise noted Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain - Bandwidth Product Output Capacitance Test Condition IC = -10 uA, IE = 0 IC = -100 uA, IB = 0 VCB = -40 V, IE = 0 VCE = -5 V, IC = -5mA IC = -10 mA, IB = -0.5 mA VCE = -10V, IC = -5 mA VCB = -10 V, IE = 0, f = 1.0 MHz VCE = -5 V, IC = -100uA VCE = -0.3V, IC = -2mA MIN -50 -50 Typ MAX Units V V -0.1 68 -0.3 200 5.5 -0.4 -2.5 15 0.42 22 0.47 29 0.52 uA V MHz pF V V K Input Off Voltage Input On Voltage Input Resistor Resistor Ratio * Pulse Test: PW300s, Duty Cycle2% (c)2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FJY4008R Rev. A1 FJY4008R PNP Epitaxial Silicon Transistor Typical Performance Characteristics Figure 1. DC current Gain 1000 Figure 2. Input On Voltage -100 VI(on)[V], INPUT VOLTAGE VCE = - 5V R1 = 47K R2 = 22K VCE = - 0.3V R1 = 47K R2 = 22K -10 hFE, DC CURRENT GAIN 100 -1 10 -1 -10 -100 -1000 -0.1 -0.1 -1 -10 -100 IC[mA], COLLECTOR CURRENT IC[mA], COLLECTOR CURRENT Figure 3. Input off Voltage Figure 4. Power Derating 280 IC [A], COLLECTOR CURRENT -1000 PC[mW], POWER DISSIPATION VCE = - 5V R1 = 47K R2 = 22K 240 200 160 -100 120 80 40 -10 -0.6 0 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 -2.4 -2.6 -2.8 0 25 50 o 75 100 125 150 175 VI(off)[V], INPUT OFF VOLTAGE Ta[ C], AMBIENT TEMPERATURE 2 FJY4008R Rev. A1 www.fairchildsemi.com FJY4008R PNP Epitaxial Silicon Transistor Package Dimensions SOT-523F Dimensions in Millimeters 3 FJY4008R Rev. A1 www.fairchildsemi.com FJY4008R PNP Epitaxial Silicon Transistor FJY4008R PNP Epitaxial Silicon Transistor TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPMTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 TCMTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date.Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor.The datasheet is printed for reference information only. Rev. I23 No Identification Needed Full Production Obsolete Not In Production 4 FJY4008R Rev. A1 www.fairchildsemi.com |
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