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| FJP5321 FJP5321 High Voltage and High Reliability * High speed Switching * Wide Safe Operating Area 1 TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Power Dissipation(TC=25C) Junction Temperature Storage Temperature Value 800 500 7 5 10 2 4 100 150 - 55 ~ 150 Units V V V A A A A W C C * Pulse Test: Pulse Width = 5ms, Duty Cycle10% Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Cib tON tSTG tF tON tSTG tF Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain bandwidth Product Output Capacitance Input Capacitance Turn On Time Storage Time Fall Time Turn On Time Storage Time Fall Time Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IC =1mA, IC = 0 VCB = 800V, IE = 0 VEB = 7V, IC = 0 VCE = 5V, IC = 0.6A VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE= 10V, IC = 0.6A VCB = 10V, IE = 0, f = 1MHz VEB = 7V, IC = 0, f = 1MHz VCC = 125V, IC = 1A IB1 = -IB2 = 0.2A RL = 125 VCC = 250V, IC = 4A IB1 = 0.8A, IB2 = -1.6A RL = 62.5 Min. 800 500 7 15 8 Typ. 14 65 1400 Max. 100 10 40 1.0 1.5 100 2000 0.5 6.5 0.3 0.5 3.0 0.3 V V MHz pF pF s s s s s s Units V V V A A (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP5321 Thermal Characteristics TC=25C unless otherwise noted Symbol Rjc Rja Thermal Resistance Characteristics Junction to Case Junction to Ambient Rating 1.25 62.5 Unit C/W (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP5321 Typical Characteristics 5.0 4.5 100 VCE = 5 V IB = 350mA TC = 75 C TC = 125 C o o IC [A], COLLECTOR CURRENT 4.0 3.5 3.0 hFE, DC CURRENT GAIN IB = 150mA 2.5 2.0 1.5 TC = - 25 C 10 o TC = 25 C o IB = 100mA IB = 50mA 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 9 10 1 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC [A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain 10 10 VCE(sat) [V], SATURATION VOLTAGE TC = 125 C 1 o TC = 75 C TC = - 25 C o o VBE(sat) [V], SATURATION VOLTAGE IC = 5 IB IC = 5 IB TC = 25 C 1 o TC = - 25 C o 0.1 TC = 25 C o TC = 125 C o TC = 75 C o 0.01 0.1 1 10 0.1 0.1 1 10 IC [A], COLLECTOR CURRENT IC [A], COLLECTOR CURRENT Figure 3. Saturation Voltage Figure 4. Saturation Voltage 100 IC [A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT 10 IC MAX (Pulse) 10ms 1ms 100s 50s IC MAX (DC) 1 0.1 IB1=3A, RB2=0 L=1mH, VCC=20V 1 10 100 1000 0.01 1 10 100 1000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 5. Reverse Bias Safe Operating Area Figure 6. Forward Bias Safe Operating Area (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP5321 Typical Characteristics (Continued) 10 120 100 tF, tSTG [s], SWITCHING TIME PC[W], POWER DISSIPATION 1 80 60 0.1 40 20 IB1=0.2A, IB2=-0.2A VCC=125V 0.01 0.1 1 10 0 0 25 50 o 75 100 125 150 175 IC [A], COLLECTOR CURRENT TC[ C], CASE TEMPERATURE Figure 7. Resistive Load Switching Time Figure 8. Power Derating (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 FJP5321 Package Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, December 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I6 |
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