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| FGA50N60LS IGBT FGA50N60LS General Description Fairchild's LS series product of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses as well as short circuit ruggedness. The LS series is especially designed for applications in medium frequencies such as switched reluctance motor controls, AC & DC motor controls, general inverters etc. Features * * * * Short circuit rated 10s @ TC = 100C, VGE = 15V Low saturation voltage : VCE(sat) = 1.6 V @ IC = 50A High input impedance Optimized for medium operating frequencies (1~5kHz) Applications Switched Reluctance Motor Controls , AC & DC motor controls, general purpose inverters,Robotics, and Servo controls C G E TO-3P GCE Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) TSC PD TJ Tstg TL TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Short Circuit Withstand Time Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C FGA50N60LS 600 20 100 50 150 10 240 96 -55 to +150 -55 to +150 300 Units V V A A A s W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 0.52 40 Units C/W C/W (c)2003 Fairchild Semiconductor Corporation FGA50N60LS Rev. A FGA50N60LS Electrical Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 50mA, VCE = VGE IC = 50A, VGE = 15V IC = 80A, VGE = 15V 3.5 --5.5 1.6 1.96 7.5 1.8 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---2660 250 78 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Tsc Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance --------------10 ----54 96 146 326 1.1 3.2 4.3 56 87 134 575 1.2 5.0 6.2 -167 27 68 14 --220 600 --6.0 --215 880 --8.7 -240 35 100 -ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ s nC nC nC nH VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 50A, RG = 5.9, VGE = 15V, Inductive Load, TC = 125C @ TC VCC =300 V, VGE = 15V = 100C VCE = 300 V, IC = 50A, VGE = 15V Measured 5mm from PKG (c)2003 Fairchild Semiconductor Corporation FGA50N60LS Rev. A FGA50N60LS 140 120 20V 15V 12V 10V Common Emitter o TC = 25 C 140 120 Collector Current, IC [A] 100 80 60 40 20 0 Common Emitter VGE = 15V o TC = 25 C o TC = 125 C Collector Current, I C [A] 100 80 60 40 20 0 0 2 VGE = 8V 4 6 8 1 Collector-Emitter Voltage, VCE [V] 10 Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 3.0 Common Emitter VGE = 15V 60 Vcc = 300V Load Current : peak of square wave 50 100A Collector - Emitter Voltage, V CE [V] 2.5 Load Current [A] 40 2.0 50A 1.5 30 20 IC = 30A 10 1.0 -50 0 50 o Duty cycle : 50% o Tc = 100 C Power Dissipation = 48W 0.1 1 10 100 1000 0 100 150 Case Temperature, TC [ C] Frequency [kHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 Common Emitter o TC = 25 C 20 Common Emitter o TC = 125 C Collector - Emitter Voltage, V CE [V] 16 Collector - Emitter Voltage, VCE [V] 16 12 12 8 100A 4 IC = 30A 0 0 4 8 12 16 20 50A 8 100A 50A IC = 30A 4 0 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE (c)2003 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FGA50N60LS Rev. A FGA50N60LS 7000 6000 5000 Cies Common Emitter VGE =0V, f = 1MHz o TC = 25 C 1000 Common Emitter VCC = 300V, VGE = +15V IC = 50A o TC = 25 C 4000 Coes 3000 2000 1000 0 1 10 Cres Switching Time [ns] TC = 125 C o Capacitance [pF] Ton 100 Tr 10 100 Collector - Emitter Voltage, VCE [V] Gate Resistance, RG [] Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VCC = 300V, VGE = +15V IC = 50A o TC = 25 C 10000 Toff Common Emitter VCC = 300V, VGE = +15V IC = 50A o TC = 25 C TC = 125 C o Switching Time [ns] 1000 Tf Switching Loss [uJ] TC = 125 C o Eoff Eoff Eon Tf 100 10 100 1000 10 100 Gate Resistance, RG [] Gate Resistance, RG [] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 Common Emitter VGE = +15V, RG = 5.9 TC = 25 C o TC = 125 C o 1000 Toff Tf Ton Toff Tf 100 100 Tr Switching Time [ns] Switching Time [ns] Common Emitter VGE = +15V, RG = 5.9 TC = 25 C o TC = 125 C 10 10 20 40 60 80 100 10 10 20 40 60 80 100 o Collector Current, IC [A] Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2003 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FGA50N60LS Rev. A FGA50N60LS 10000 15 Common Emitter RL= 6 Switching Loss [uJ] GE (V) 12 Tc=25 C 300V o Gate-Emitter Voltage, V Eoff 1000 Eoff 9 200V Vcc=100V 6 Eon Common Emitter VGE = +15V, RG = 5.9 TC = 25 C o TC = 125 C 20 40 60 80 100 o 3 Eon 100 10 0 0 30 60 90 120 150 180 Collector Current, IC [A] Gate Charge, Qg (nC) Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics IC MAX. (Pulsed) 100 IC MAX. (Continuous) 100s 1ms DC Operation 50s 100 Collector Current, I C [A] 10 1 Single Nonrepetitive o Pulse TC = 25 C Curves must be derated linearly with increase in temperature 0.1 1 10 100 1000 Collector Current, I C [A] 10 0.1 1 1 Safe Operating Area o VGE = 20V, TC = 100 C 10 100 1000 Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA 10 Thermal Response [Zthjc] 1 0.5 0.1 0.2 0.1 0.05 Pdm 0.01 0.02 t1 0.01 single pulse 1E-3 -5 -4 -3 -2 -1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 0 1 10 10 10 10 10 10 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2003 Fairchild Semiconductor Corporation FGA50N60LS Rev. A FGA50N60LS Package Dimension TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation FGA50N60LS Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACT Quiet SeriesTM ActiveArrayTM FAST(R) FASTrTM BottomlessTM FRFETTM CoolFETTM CROSSVOLTTM GlobalOptoisolatorTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM EnSignaTM ImpliedDisconnectTM FACTTM ISOPLANARTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I5 |
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