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| FDY301NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET January 2006 FDY301NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET General Description This Single N-Channel MOSFET has been designed using Fairchild Semiconductor's advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5v. Features * 200 mA, 20 V RDS(ON) = 5 @ VGS = 4.5 V RDS(ON) = 7 @ VGS = 2.5 V * ESD protection diode (note 3) * RoHS Compliant Applications * Li-Ion Battery Pack 1 S G G1 3 S 2 D D Absolute Maximum Ratings Symbol VDSS VGSS TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Ratings 20 (Note 1a) 1a) Units V V ID Drain Current PD - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) 1a) (Note 1b) 1 TJ, TSTG Operating and Storage Junction Temperature Range 12 200 1000 625 446 -55 to +150 mA mW C Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) 1a) 200 C/W RJA Thermal Resistance, Junction-to-Ambient (Note 1b) 1 280 Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity D FDY301NZ 7'' 8 mm 3000units (c)2006 Fairchild Semiconductor Corporation FDY301NZ Rev A www.fairchildsemi.com FDY301NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET Electrical Characteristics Symbol BVDSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, (Note 2) Test Conditions VGS = 0 V, ID = 250 A Min 20 Typ Max Units V Off Characteristics BVDSS TJ IDSS IGSS ID = 250 A, Referenced to 25C 14 mV/C VDS = 16 V, VGS = 0 V VGS = 12 V, VDS = 0 V VGS = 4.5 V, VDS = 0 V 1 10 1 A A A On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25 0.6 C 2.8 1.5 V mV/C gFS Forward Transconductance VGS = 4.5 V, ID = 200 mA ID = 175 mA VGS = 2.5 V, VGS = 1.8 V, ID = 150 mA ID = 20 mA VGS = 1.5 V VGS = 4.5 V, ID=200mA, TJ = 125C VDS = 5 V, ID = 200 mA 5 7 9 10 7 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance VDS = 10 V, f = 1.0 MHz Crss Reverse Transfer Capacitance (Note 2) Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = 10 V, VGS = 4.5 V, td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge VDS = 10 V, VGS = 4.5 V Qgd Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings VSD trr Drain-Source Diode Forward Voltage Diode Reverse Recovery Time VGS = 0 V, Qrr Notes: Diode Reverse Recovery Charge IF = 200 mA, dIF/dt = 100 A/s 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of s the drain pins. RJC is guaranteed by design while RCA is determined by the user' board design. a) 200C/W when 2 mounted on a 1in pad of 2 oz copper FDY301NZ Rev A 1.1 S V GS = 0 V, 60 pF 20 pF 10 pF ID = 1 A, RGEN = 6 6 12 ns 8 16 ns 8 16 ns 2.4 4.8 ns ID = 200 mA, 0.8 1.1 nC 0.16 nC 0.26 nC IS = 150 mA (Note 2) 0.7 1.2 V 12 nS 3 nC b) 280C/W when mounted on a minimum pad of 2 oz copper Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. The diode connected between the gate and source serves only as protection againts ESD. No gate overvoltage rating is implied. www.fairchildsemi.com FDY301NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics 1 2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 3.5V 3.0V ID, DRAIN CURRENT (A) 0.8 2.0V 0.6 0.4 1.8V 0.2 1.5V 0 0 0.25 0.5 0.75 1 VDS, DRAIN-SOURCE VOLTAGE (V) 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 VGS = 1.8V 2.0V 2.5V 3.0V 3.5V 4.5V 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 RDS(ON), ON-RESISTANCE (OHM) ID = 200mA VGS = 4.5V 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 1 2 3 4 TA = 25oC TA = 125oC ID = 100mA 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 5 TJ, JUNCTION TEMPERATURE ( C) VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 1.5 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 1 IS, REVERSE DRAIN CURRENT (A) VDS = 5V ID, DRAIN CURRENT (A) 1.2 TA = -55oC 25oC VGS = 0V 0.1 125 C 0.9 o TA = 125oC 0.01 25oC 0.6 0.001 -55oC 0.3 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDY301NZ Rev A www.fairchildsemi.com FDY301NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET Typical Characteristics 5 100 ID = 600mA VGS, GATE-SOURCE VOLTAGE (V) 90 CAPACITANCE (pF) f = 1MHz VGS = 0 V Ciss 4 VDS = 5V 80 10V 15V 70 60 50 40 30 20 10 3 2 Coss 1 0 0 0.2 0.4 0.6 0.8 1 Qg, GATE CHARGE (nC) 0 0 Crss 4 8 12 16 20 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 10 P(pk), PEAK TRANSIENT POWER (W) Figure 8. Capacitance Characteristics. 30 25 20 15 10 5 0 0.0001 ID, DRAIN CURRENT (A) 1 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC SINGLE PULSE RJA = 280 C/W TA = 25 C 0.1 VGS = 4.5V SINGLE PULSE RJA = 280oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA =280 C/W 0.1 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 t1 0.01 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDY301NZ Rev A www.fairchildsemi.com FDY301NZ Single N-Channel 2.5V Specified PowerTrench(R) MOSFET Dimensional Outline and Pad Layout 1.70 1.50 0.50 0.35 0.25 0.50 3 0.98 0.78 1.70 1.50 1.14 1.80 1 (0.15) 2 0.50 0.50 0.66 LAND PATTERN RECOMMENDATION 1.00 0.78 0.58 SEE DETAIL A 0.20 0.04 0.43 0.28 0.54 0.34 0.10 0.00 DETAIL A SCALE 2 : 1 NOTES: UNLESS OTHERWISE SPECIFIED A) THIS PACKAGE CONFORMS TO EIAJ SC89 PACKAGING STANDARD. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS ARE EXCLUSIVE OF BURRS, MOLD FLASH, AND TIE BAR EXTRUSIONS. FDY301NZ Rev A www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I18 Preliminary No Identification Needed Full Production Obsolete Not In Production |
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