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ESAC87M-009 (16A) SCHOTTKY BARRIER DIODE 15.5 0.3 (90V / 16A ) Outline drawings, mm 5.5 0.3 o3.2 0.2 5.5 0.2 9.3 0.3 3.2 +0.3 2.3 0.2 2.10.3 1.6 0.3 1.1 --0.1 +0.2 20 Min 21.5 0.3 5.45 0.2 5.45 0.2 0.6 +0.2 3.5 0.2 Features Insulated package by fully molding Low VF Super high speed switching High reliability by planer design JEDEC EIAJ 1. Gate 2. Drain 3. Source Connection diagram Applications High speed power switching 1 2 3 Maximum ratings and characteristics Absolute maximum ratings Item Repetitive peak reverse voltage Non-repetitive peak reverse voltage Isolating voltage Average output current Surge current Operating junction temperature Storage temperature Symbol VRRM VRSM V iso Io IFSM Tj Tstg tw=500ns, duty=1/40 Terminals-to-case, AC. 1min. Conditions Rating 90 100 1500 16* 100 -40 to +150 -40 to +150 Unit V V V A A C C Square wave, duty=1/2 Tc=90C Sine wave 10ms * Average forward current of centertap full wave connection Electrical characteristics (Ta=25C Unless otherwise specified ) Item Forward voltage drop Reverse current Thermal resistance Symbol VFM IRRM Rth(j-c) Conditions IFM=6A VR=VRRM Junction to case Max. 0.9 10 2.0 Unit V mA C/W (90V / 16A ) Characteristics Forward characteristics 50 30 10 30 10 5 3 1 ESAC87M-009 (16A) Reverse characteristics IF [A] 5 3 1 0.5 0.3 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 IR [mA] 0.5 0.3 0.1 0.05 0.03 0.01 0 20 40 60 80 100 120 140 VF [V] VR [V] Forward power dissipation 10 4.0 Reverse power dissipation 8 3.0 WF [W] 6 WR [W] 2.0 4 1.0 2 0 0 2 4 6 8 10 0 0 20 40 60 80 100 Io [A] VR [V] Output current-case temperature 150 1000 500 100 300 Junction capacitance characteristics Tc [C ] 50 Cj [pF] 100 50 0 0 4 8 12 16 20 24 28 30 3 5 10 Io [A] VR [V] 30 50 100 (90V / 16A ) Surge capability 300 ESAC87M-009 (16A) 100 IFSM [A] 50 30 10 1 3 5 10 30 [time] (at 50Hz) Transient thermal impedance 101 [C/W] 100 10-1 10-3 10-2 10-1 100 101 102 t [sec.] |
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