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| EMZ1DXV6T1, EMZ1DXV6T5 Product Preview Dual General Purpose Transistors NPN/PNP Dual (Complimentary) This transistor is designed for general purpose amplifier applications. It is housed in the SOT-563 which is designed for low power surface mount applications. (3) http://onsemi.com (2) (1) * Lead-Free Solder Plating * Low VCE(SAT), t0.5 V MAXIMUM RATINGS Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value -60 -50 -6.0 -100 Unit V V V mAdc Q1 Q2 (4) (5) (6) 6 54 3 12 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation Derate above 25C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range 1. FR-4 @ Minimum Pad. RqJA TJ, Tstg TA = 25C RqJA TA = 25C Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note 1) 4.0 (Note 1) 250 (Note 1) -55 to +150 Unit mW mW/C SOT-563 CASE 463A PLASTIC MARKING DIAGRAM 3Z D C/W 3Z = Specific Device Code D = Date Code Unit mW mW/C C/W C EMZ1DXV6T5 SOT-563 Symbol PD ORDERING INFORMATION Device EMZ1DXV6T1 Package SOT-563 Shipping 4 mm Pitch 4000/Tape & Reel 2 mm Pitch 8000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice. (c) Semiconductor Components Industries, LLC, 2003 1 October, 2003 - Rev. P0 Publication Order Number: EMZ1DXV6/D EMZ1DXV6T1, EMZ1DXV6T5 ELECTRICAL CHARACTERISTICS (TA = 25C) Characteristic Q1: PNP Collector-Base Breakdown Voltage (IC = -50 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = -50 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = -30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = -5.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage (Note 4) (IC = -50 mAdc, IB = -5.0 mAdc) DC Current Gain (Note 4) (VCE = -6.0 Vdc, IC = -1.0 mAdc) Transition Frequency (VCE = -12 Vdc, IC = -2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = -12 Vdc, IE = 0 Adc, f = 1 MHz) Q2: NPN Collector-Base Breakdown Voltage (IC = 50 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = 50 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = 60 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 7.0 Vdc, IB = 0) Collector-Emitter Saturation (IC = 50 mAdc, IB = 5.0 mAdc) Voltage(2) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) - hFE 120 fT COB - - - 180 2.0 560 - - MHz pF - 0.4 - 60 50 7.0 - - - - - - - - - - 0.5 0.5 Vdc Vdc Vdc mA mA Vdc V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) - hFE 120 fT - COB - 140 3.5 - - pF - 560 MHz - -0.5 - -60 -50 -6.0 - - - - - - - - - - -0.5 -0.5 Vdc Vdc Vdc nA mA Vdc Symbol Min Typ Max Unit DC Current Gain(2) (VCE = 6.0 Vdc, IC = 1.0 mAdc) Transition Frequency (VCE = 12 Vdc, IC = 2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = 12 Vdc, IC = 0 Adc, f = 1 MHz) 2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 3. Pulse Test: Pulse Width 300 ms, D.C. 2%. 4. Pulse Test: Pulse Width 300 ms, D.C. 2%. http://onsemi.com 2 EMZ1DXV6T1, EMZ1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - Q1, PNP 1000 TA = 25C IC, COLLECTOR CURRENT (mA) 120 90 60 30 0 DC CURRENT GAIN TA = 75C 300 mA 250 200 150 100 IB = 50 mA 0 3 6 9 12 15 10 0.1 1 10 100 TA = - 25C TA = 25C VCE = 10 V 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 1. IC - VCE VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1 Figure 2. DC Current Gain 1 0.5 TA = 25C VCE = 5 V 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region 13 Cib, INPUT CAPACITANCE (pF) 12 Cob, CAPACITANCE (pF) 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 14 12 10 8 6 4 2 0 0 10 Figure 4. On Voltage 20 VCB (V) 30 40 Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 3 EMZ1DXV6T1, EMZ1DXV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - Q2, NPN 60 IC, COLLECTOR CURRENT (mA) 50 40 30 20 10 0 0 2 4 6 VCE, COLLECTOR VOLTAGE (V) TA = 25C 160 mA 140 mA DC CURRENT GAIN 120 mA 100 mA 80 mA 60 mA 40 mA IB = 20 mA 8 10 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) TA = 75C TA = - 25C 100 1000 TA = 25C VCE = 10 V Figure 1. IC - VCE 2 TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1 Figure 2. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (V) 1 0.5 TA = 25C VCE = 5 V 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 3. Collector Saturation Region 20 Cib, INPUT CAPACITANCE (pF) 18 16 14 12 10 7 6 Cob, CAPACITANCE (pF) 5 4 3 2 0 1 2 VEB (V) 3 4 1 0 Figure 4. On Voltage 10 20 VCB (V) 30 40 Figure 5. Capacitance Figure 6. Capacitance http://onsemi.com 4 EMZ1DXV6T1, EMZ1DXV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN MAX 1.50 1.70 1.10 1.30 0.50 0.60 0.17 0.27 0.50 BSC 0.08 0.18 0.10 0.30 1.50 1.70 INCHES MIN MAX 0.059 0.067 0.043 0.051 0.020 0.024 0.007 0.011 0.020 BSC 0.003 0.007 0.004 0.012 0.059 0.067 A -X- C K 4 6 5 1 2 3 B -Y- S D G 5 6 PL M J XY 0.08 (0.003) DIM A B C D G J K S STYLE 1: PIN 1. EMITTER 1 2. BASE 1 3. COLLECTOR 2 4. EMITTER 2 5. BASE 2 6. COLLECTOR 1 SOLDER FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For information on soldering specifications, please refer to our Soldering Reference Manual, SOLDERRM/D. http://onsemi.com 5 EMZ1DXV6T1, EMZ1DXV6T5 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 EMZ1DXV6T1/D |
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