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| Infrared Emitting Diodes(GaAs) K DNH OESI EL-313 DIMENSIONS The EL-313 is a high-power GaAs IRED mounted in a clear side-viewing package. This IRED is both compact and easy to mount. (Unit : mm) FEATURES UCompact plastic mold type APPLICATIONS UOptical switches UTransmission sensors MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I PD F IP Topr. Tstg. Tsol. Rating 4 50 100 1 0 85 2 0 85 3 240 Unit V mA mW A ... ... ... *1. pulse width tw Z100 *I sec.period 10msec T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Radiant intensity *3 Half angle TP *3. Exclusive ris used as detector (Ta=2...) 5 Symbol VF R I *Ip PO **E Conditions F= I 30mA VR=4V F= I 20mA F= I 30mA Min. Typ. 1.2 940 2.0 ae 0 2 Max. 1.5 10 Unit. V *I A nm mW deg. - 1- Infrared Emitting Diodes(GaAs) EL-313 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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