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28F016XD 16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
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56-Lead TSOP Type I Package Backwards-Compatible with 28F008SA Command Set 2 A Typical Deep Power-Down Current 1 mA Typical I CC Active Current in Static Mode 32 Separately-Erasable/Lockable 64-Kbyte Blocks 1 Million Erase Cycles per Block State-of-the-Art 0.6 m ETOXTM IV Flash Technology
85 ns Access Time (t RAC) Supports both Standard and FastPage-Mode Accesses Multiplexed Address Bus RAS# and CAS# Control Inputs No-Glue Interface to Many Memory Controllers SmartVoltage Technology User-Selectable 3.3V or 5V V CC User-Selectable 5V or 12V V PP 0.33 MB/sec Write Transfer Rate x16 Architecture
Intel's 28F016XD 16-Mbit flash memory is a revolutionary architecture which is the ideal choice for designing truly revolutionary high-performance products. Combining its DRAM-like read performance and interface with the intrinsic nonvolatility of flash memory, the 28F016XD eliminates the traditional redundant memory paradigm of shadowing code from a slow nonvolatile storage source to a faster execution memory, such as DRAM, for improved system performance. The innovative capabilities of the 28F016XD enable the design of direct-execute code and mass storage data/file flash memory systems. The 28F016XD's DRAM-like interface with a multiplexed address bus, flexible VCC and VPP voltages, power saving features, extended cycling, fast program and read performance, symmetrically-blocked architecture, and selective block locking provide a highly flexible memory component suitable for resident flash component arrays on the system board or SIMMs. The DRAM-like interface with RAS# and CAS# control inputs allows for easy migration to flash memory in existing DRAM-based systems. The 28F016XD's dual read voltage allows the same component to operate at either 3.3V or 5.0V VCC. Programming voltage at 5.0V VPP minimizes external circuitry in minimal-chip, space critical designs, while the 12.0V VPP option maximizes program/erase performance. The x16 architecture allows optimization of the memory-to-processor interface. Its high read performance combined with flexible block locking enable both storage and execution of operating systems/application software and fast access to large data tables. The 28F016XD is manufactured on Intel's 0.6 m ETOX IV process technology.
December 1996
Order Number: 290533-004
Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no liability whatsoever, and Intel disclaims any express or implied warranty, relating to sale and/or use of Intel products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright or other intellectual property right. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. The 28F016XD may contain design defects or errors known as errata. Current characterized errata are available upon request. *Third-party brands and names are the property of their respective owners. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. Copies of documents which have an ordering number and are referenced in this document, or other Intel literature, may be obtained from: Intel Corporation P.O. Box 7641 Mt. Prospect, IL 60056-7641 or call 1-800-879-4683
COPYRIGHT (c) INTEL CORPORATION, 1996 CG-041493
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4.0 4.1 4.2 4.3 4.4 4.5 4.6
28F016XD FLASH MEMORY
CONTENTS
PAGE PAGE AC Characteristics (VCC = 3.3V 0.3V)..............................28 Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters) ....28 Read Cycle...............................................28 Write Cycle ...............................................29 Read-Modify-Write Cycle..........................30 Fast Page Mode Cycle .............................30 Fast Page Mode Read-Modify-Write Cycle ........................................................30 Refresh Cycle...........................................31 Misc. Specifications ..................................31 5.7 AC Characteristics (VCC = 5.0V 0.5V)..............................33 Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters) ....33 Read Cycle...............................................34 Write Cycle ...............................................35 Read-Modify-Write Cycle..........................35 Fast Page Mode Cycle .............................35 Fast Page Mode Read-Modify-Write Cycle ........................................................36 Refresh Cycle...........................................36 Misc. Specifications ..................................37 5.8 AC Waveforms ........................................38 5.9 Power-Up and Reset Timings..................50 5.10 Erase and Word Program Performance ..51 5.6 6.0 MECHANICAL SPECIFICATIONS ............52
1.0 INTRODUCTION ......................................... 5 1.1 Product Overview...................................... 5 2.0 DEVICE PINOUT......................................... 6 2.1 Lead Descriptions ..................................... 9 3.0 MEMORY MAPS ....................................... 11 3.1 Extended Status Registers Memory Map ........................................ 12 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS.......... 13 Bus Operations ....................................... 13 28F008SA--Compatible Mode Command Bus Definitions.................... 14 28F016XD--Enhanced Command Bus Definitions ..................................... 15 Compatible Status Register .................... 16 Global Status Register ............................ 17 Block Status Register.............................. 18
5.0 ELECTRICAL SPECIFICATIONS ............. 19 5.1 Absolute Maximum Ratings..................... 19 5.2 Capacitance............................................ 20 5.3 Transient Input/Output Reference Waveforms........................................... 21 5.4 DC Characteristics (VCC = 3.3V 0.3V).............................. 22 5.5 DC Characteristics (VCC = 5.0V 0.5V).............................. 25
APPENDIX A: Device Nomenclature and Ordering Information .....................................53 APPENDIX B: Additional Information...............54
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28F016XD FLASH MEMORY
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REVISION HISTORY
Description
Number -001 -002 Original Version
Removed support of the following features: * All page buffer operations (read, write, programming, Upload Device Information) * Command queuing * Software Sleep and Abort * Erase All Unlocked Blocks * Device Configuration command Changed definition of "NC." Removed "No internal connection to die" from description. Added "xx" to Upper Byte of Command (Data) Definition in Sections 4.2 and 4.3. Modified parameters "V" and "I" of Section 5.1 to apply to "NC" pins. Increased IPPS (VPP Read Current) for VPP > VCC to 200 A at VCC = 3.3V/5.0V. Changed VCC = 5.0V DC Characteristics (Section 5.5) marked with Note 1 to indicate that these currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a TTL rise/fall time of <10 ns. Corrected "RP# high to RAS# going low" to be a "Min" specification at V CC = 3.3V/5.0V. Increased Typical "Word/Block Program Times" (tWHRH1/tWHRH3) for VPP = 5.0V: tWHRH1 from 24.0 s to 35.0 s and t WHRH3 from 0.8 sec to 1.2 sec at V CC = 3.3V tWHRH1 from 16.0 s to 25.0 s and t WHRH3 from 0.6 sec to 0.85 sec at V CC = 5.0V Changed "Time from Erase Suspend Command to WSM Ready" spec name to "Erase Suspend Latency Time to Read;" modified typical values and added Min/Max values at VCC =3.3/5.0V and VPP =5.0/12.0V (Section 5.10). Minor cosmetic changes throughout document. Added 3/5# pin to Pinout Configuration (Figure 2), Product Overview (Section 1.1) and Lead Descriptions (Section 2.1) Modified Block Diagram (Figure 1): Removed Address/Data Queues, Page Buffers, and Address Counter; Added 3/5# pin Added 3/5# pin to Test Conditions of ICC2 and ICC5 Specifications Modified Power-Up and Reset Timings (Section 5.9) to include 3/5# pin: Removed t5VPH and t 3VPH specifications; Added t PLYL, tPLYH, tYLPH, and tYHPH specifications Corrected TSOP Mechanical Specification A1 from 0.50 mm to 0.050 mm (Section 6.0) Minor cosmetic changes throughout document. Updated DC Specifications ICC3, ICC4, ICC6, ICC7, ICCD and IPPES Updated AC Specifications tCAS(min), tRCD(max) and tCWD(min)
-003
-004
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28F016XD FLASH MEMORY
other flash memories. Significant features of the 28F016XD include: * No-Glue Interface to Memory Controllers * Improved Word Program Performance * SmartVoltage Technology Selectable 3.3V or 5.0V VCC Selectable 5.0V or 12.0V VPP * Block Program/Erase Protection The 28F016XD's multiplexed address bus with RAS# and CAS# inputs allows for a "No Glue" interface to many existing in-system memory controllers. As such, 28F016XD-based SIMMs (72-pin JEDEC Standard) offer attractive advantages over their DRAM counterparts in many applications. For more information on 28F016XDbased SIMM designs, see the application note referenced at the end of this datasheet. The 28F016XD incorporates SmartVoltage technology, providing VCC operation at both 3.3V and 5.0V and program and erase capability at VPP = 12.0V or 5.0V. Operating at VCC = 3.3V, the 28F016XD consumes less than 60% of the power consumption at 5.0V VCC, while 5.0V VCC provides the highest read performance capability. VPP = 5.0V operation eliminates the need for a separate 12.0V converter, while VPP = 12.0V maximizes program/erase performance. In addition to the flexible program and erase voltages, the dedicated VPP gives complete code protection with VPP VPPLK. A 3/5# input pin configures the device's internal circuitry for optimal 3.3V or 5.0V read/program operation. A Command User Interface (CUI) serves as the system interface between the microprocessor or microcontroller and the internal memory operation. Internal Algorithm Automation allows word programs and block erase operations to be executed using a Two-Write command sequence to the CUI in the same way as the 28F008SA 8Mbit FlashFileTM memory. Software Locking of Memory Blocks is an added feature of the 28F016XD as compared to the 28F008SA. The 28F016XD provides selectable block locking to protect code or data such as direct-executable operating systems or application code. Each block has an associated nonvolatile lock-bit which determines the lock status of the 5
1.0 INTRODUCTION
The documentation of the Intel 28F016XD flash memory device includes this datasheet, a detailed user's manual, and a number of application notes and design tools, all of which are referenced in Appendix B. The datasheet is intended to give an overview of the chip feature-set and of the operating AC/DC specifications. The 16-Mbit Flash Product Family User's Manual provides complete descriptions of the user modes, system interface examples and detailed descriptions of all principles of operation. It also contains the full list of software algorithm flowcharts, and a brief section on compatibility with the Intel 28F008SA. Significant 28F016XD feature revisions occurred between datasheet revisions 290533-001 and 290533-002. These revisions center around removal of the following features: * All page buffer operations (read, write, programming, Upload Device Information) * Command queuing * Software Sleep and Abort * Erase all Unlocked Blocks * Device Configuration command In addition, a significant 28F016XD change occurred between datasheet revisions 290532-002 and 290532-003. This change centers around the addition of a 3/5# pin to the device's pinout configuration. Figure 2 shows the 3/5# pin assignment for the TSOP Type 1 package. Intel recommends that all customers obtain the latest revisions of 28F016XD documentation.
1.1 Product Overview
The 28F016XD is a high-performance, 16-Mbit (16,777,216-bit) block erasable, nonvolatile random access memory, organized as 1 Mword x 16. The 28F016XD includes thirty-two 32-KW (32,768 word) blocks. A chip memory map is shown in Figure 3. The implementation of a new architecture, with many enhanced features, will improve the device operating characteristics and result in greater product reliability and ease-of-use as compared to
28F016XD FLASH MEMORY
block. In addition, the 28F016XD has a master Write Protect pin (WP#) which prevents any modifications to memory blocks whose lock-bits are set. Writing of memory data is performed in word increments typically within 6 s (12.0V VPP)--a 33% improvement over the 28F008SA. A block erase operation erases one of the 32 blocks in typically 0.6 sec (12.0V VPP), independent of the other blocks, which is about a 65% improvement over the 28F008SA. Each block can be written and erased a minimum of 100,000 cycles. Systems can achieve one million Block Erase Cycles by providing wearleveling algorithms and graceful block retirement. These techniques have already been employed in many flash file systems and hard disk drive designs. All operations are started by a sequence of Write commands to the device. Three types of Status Registers (described in detail later in this datasheet) and a RY/BY# output pin provide information on the progress of the requested operation. The following Status Registers are used to provide device and WSM information to the user : * A Compatible Status Register (CSR) which is 100% compatible with the 28F008SA FlashFile memory Status Register. The CSR, when used alone, provides a straightforward upgrade capability to the 28F016XD from a 28F008SAbased design. * A Global Status Register (GSR) which also informs the system of overall Write State Machine (WSM) status. * 32 Block Status Registers (BSRs) which provide block-specific status information such as the block lock-bit status. The GSR and BSR memory maps are shown in Figure 4.
The 28F016XD incorporates an open drain RY/BY# output pin. This feature allows the user to OR-tie many RY/BY# pins together in a multiple memory configuration such as a Resident Flash Array. The 28F016XD is specified for a maximum fast page mode cycle time of 65 ns (tPC,R) at 5.0V operation (4.75V to 5.25V) over the commercial temperature range (0C to +70C). A corresponding maximum fast page mode cycle time of 75 ns at 3.3V (3.0V to 3.6V and 0C to +70C) is achieved for reduced power consumption applications. The 28F016XD incorporates an Automatic Power Saving (APS) feature, which substantially reduces the active current when the device is in static mode of operation (addresses not switching). In APS mode, the typical ICC current is 1 mA at 5.0V (3.0 mA at 3.3V). A deep power-down mode of operation is invoked when the RP# (called PWD# on the 28F008SA) pin transitions low. This mode brings the device power consumption to less than 2.0 A, typically, and provides additional write protection by acting as a device reset pin during power transitions. A reset time of 300 ns (5.0V VCC operation) is required from RP# switching high until dropping RAS#. In the deep power-down state, the WSM is reset (any current operation will abort) and the CSR, GSR and BSR registers are cleared. A CMOS standby mode of operation is enabled when RAS# and CAS# transition high and RP# stays high with all input control pins at CMOS levels. In this mode, the device typically draws an ICC standby current of 70 A at 5.0V V CC. The 28F016XD is available in a 56-Lead, 1.2 mm thick, 14 mm x 20 mm TSOP Type I package. This form factor and pinout allow for very high board layout densities.
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2.0 DEVICE PINOUT
The 28F016XD 56-Lead TSOP Type I pinout configuration is shown in Figure 2.
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DQ 8-15 DQ 0-7 Output Buffer Output Buffer Input Buffer
28F016XD FLASH MEMORY
Input Buffer
I/O Logic
VCC
Output Multiplexer
ID Register
Data Register
CSR
RAS#
ESRs
OE#
CAS#
CUI
Data Comparator
WE#
WP#
0-9
RAS# CAS#
Input Buffer/ Address De-Mux
A
RP# Y Decoder
Y Gating/Sensing
RY/BY#
64-Kbyte Block 0
64-Kbyte Block 1
64-Kbyte Block 30
64-Kbyte Block 31
WSM
Address Register
X Decoder
Program/Erase Voltage Switch
VPP 3/5#
V CC
GND
0533_01
Figure 1. 28F016XD Block Diagram Architectural Evolution Includes Multiplexed Address Bus, SmartVoltage Technology, and Extended Registers
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28F016XD FLASH MEMORY
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E28F016XD 56-LEAD TSOP PINOUT 14 mm x 20 mm TOP VIEW 56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 WP# WE# OE# RY/BY# DQ 15 DQ 7 DQ 14 DQ 6 GND DQ 13 DQ 5 DQ 12 DQ 4 VCC GND DQ 11 DQ 3 DQ 10 DQ 2 VCC DQ 9 DQ 1 DQ 8 DQ 0 NC VCC NC NC
0533_02
3/5# GND NC A9 A8 A7 A6 A5 VCC RAS# CAS# NC NC GND VPP RP# NC NC NC NC GND NC NC A4 A3 A2 A1 A0
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
Figure 2. 28F016XD 56-Lead TSOP Type I Pinout Configuration
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Symbol A0-A9 DQ0-DQ15 RAS# CAS#
28F016XD FLASH MEMORY
2.1 Lead Descriptions
Type INPUT Name and Function MULTIPLEXED ROW/COLUMN ADDRESSES: Selects a word within one of thirty-two 32-Kword blocks. Row (upper) addresses are latched on the falling edge of RAS#, while column (lower) addresses are latched on the falling edge of CAS#. INPUT/OUTPUT DATA BUS: Inputs data and commands during CUI write cycles. Outputs array, identifier or status data (DQ0-7) in the appropriate read mode. Floated when the chip is de-selected or the outputs are disabled. INPUT ROW ADDRESS STROBE: Latches row address information on inputs A9-0 when RAS# transitions low. A subsequent CAS# low transition initiates 28F016XD read or program operations. INPUT COLUMN ADDRESS STROBE: Latches column address information on inputs A9-0 when CAS# transitions low. When preceded by a RAS# low transition, CAS# low initiates 28F016XD read or program operations, along with OE# and WE#. Subsequent CAS# low transitions, with RAS# held low, enable fast page mode reads/programs INPUT RESET/POWER-DOWN: RP# low places the device in a deep powerdown state. All circuits that consume static power, even those circuits enabled in standby mode, are turned off. When returning from deep power-down, a recovery time of 300 ns at 5.0V VCC is required to allow these circuits to power-up. When RP# goes low, the current WSM operation is terminated, and the device is reset. All Status Registers return to ready (with all status flags cleared). Exit from deep power-down places the device in read array mode. INPUT OUTPUT ENABLE: Gates device data through the output buffers when low in combination with RAS# and CAS# low. The outputs float to tri-state off when OE# is high. OE# can be tied to GND if not controlled by the system memory controller. RAS# and CAS# high override OE# low. WE# low also overrides OE# low. INPUT WRITE ENABLE: Controls access to the CUI, Data Register and Address Register. WE# is active low and initiates programs in combination with RAS# and CAS# low. WE# low overrides OE# low. RAS# and CAS# high override WE# low. OPEN DRAIN READY/BUSY: Indicates status of the internal WSM. When low, it OUTPUT indicates that the WSM is busy performing an operation. RY/BY# floating indicates that the WSM is ready for new operations, erase is suspended, or the device is in deep power-down mode. This output is always active (i.e., not floated to tri-state off when OE#, RAS# or CAS# are high). INPUT WRITE PROTECT: Erase blocks can be locked by writing a nonvolatile lock-bit for each block. When WP# is low, those locked blocks as reflected by the Block-Lock Status bits (BSR.6), are protected from inadvertent data programs or erases. When WP# is high, all blocks can be written or erased regardless of the state of the lock-bits. The WP# input buffer is disabled when RP# transitions low (deep power-down mode).
RP#
OE#
WE#
RY/BY#
WP#
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28F016XD FLASH MEMORY
2.1 Lead Descriptions (Continued)
Symbol 3/5# Type INPUT Name and Function
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VPP
SUPPLY
VCC
SUPPLY
GND NC
SUPPLY
3.3/5.0 VOLT SELECT: 3/5# high configures internal circuits for 3.3V operation. 3/5# low configures internal circuits for 5.0V operation. NOTE: Reading the array with 3/5# high in a 5.0V system could damage the device. Reference the power-up and reset timings (Section 5.9) for 3/5# switching delay to valid data. PROGRAM/ERASE POWER SUPPLY (12.0V 0.6V, 5.0V 0.5V): For erasing memory array blocks or writing words into the flash array. V PP = 5.0V 0.5V eliminates the need for a 12.0V converter, while connection to 12.0V 0.6V maximizes program/erase performance. NOTE: Successful completion of program and erase attempts is inhibited with VPP at or below 1.5V. Program and erase attempts with VPP between 1.5V and 4.5V, between 5.5V and 11.4V, and above 12.6V produce spurious results and should not be attempted. DEVICE POWER SUPPLY (3.3V 0.3V, 5.0V 0.5V): To switch 3.3V to 5.0V (or vice versa), first ramp V CC down to GND, and then power to the new VCC voltage. Do not leave any power pins floating. GROUND FOR ALL INTERNAL CIRCUITRY: Do not leave any ground pins floating. NO CONNECT: Lead may be driven or left floating.
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28F016XD FLASH MEMORY
3.0 MEMORY MAPS
A [19-0]
FFFFF F8000 F7FFF F0000 EFFFF E8000 E7FFF E0000 DFFFF D8000 D7FFF D0000 CFFFF C8000 C7FFF C0000 BFFFF B8000 B7FFF B0000 A8FFF A8000 A7FFF A0000 9FFFF 98000 97FFF 90000 8FFFF 88000 87FFF 80000 7FFFF 78000 77FFF 70000 6FFFF 68000 67FFF 60000 5FFFF 58000 57FFF 50000 4FFFF 48000 47FFF 40000 3FFFF 38000 37FFF 30000 2FFFF 28000 27FFF 20000 1FFFF 18000 17FFF 10000 0FFFF 08000 07FFF 00000
32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block 32-Kword Block
31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
0533_03
NOTE: The upper 10 bits (A19-10) reflect 28F016XD addresses A9-0, latched by RAS#. The lower 10 bits (A9-0) reflect 28F016XD addresses A9-0, latched by CAS#.
Figure 3. 28F016XD Memory Map
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28F016XD FLASH MEMORY
3.1 Extended Status Registers Memory Map
A 19-0
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FFFFFH F8003H F8002H F8001H
RESERVED
RESERVED GSR RESERVED BSR31 RESERVED RESERVED F8000H
07FFFH RESERVED
00003H RESERVED GSR RESERVED BSR0 RESERVED RESERVED
NOTE: The upper 10 bits (A19-10) reflect 28F016XD addresses A9-0, latched by RAS#. The lower 10 bits (A9-0) reflect 28F016XD addresses A9-0, latched by CAS#.
00002H
00001H
00000H
0533_04
Figure 4. Extended Status Registers Memory Map
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Read Standby Device ID Write
28F016XD FLASH MEMORY
4.0 BUS OPERATIONS, COMMANDS AND STATUS REGISTER DEFINITIONS 4.1 Bus Operations
Mode Row Address Latch Column Address Latch Notes 1,2,9 1,2,9 1,2,7 1,6,7 1,6,7 1,3 4,8 4,8 1,5,6 RP# VIH VIH VIH VIH VIH VIL VIH VIH VIH RAS# VIL VIL VIL VIH X VIL VIL VIL CAS# VIH VIL VIL VIH X VIL VIL VIL OE# X X VIL VIH X X VIL VIL X WE# X X VIH VIH X X VIH VIH VIL DQ0-15 X X DOUT High Z High Z High Z 0089H 66A8H DIN RY/BY# X X X X X VOH VOH VOH X
Output Disable
Deep Power-Down Manufacturer ID
NOTES: 1. X can be VIH or VIL for address or control pins except for RY/BY#, which is either VOL or VOH, or High Z or DOUT for data pins depending on whether or not OE# is active. 2. RY/BY# output is open drain. When the WSM is ready, erase is suspended or the device is in deep power-down mode, RY/BY# will be at VOH if it is tied to VCC through a resistor. RY/BY# at VOH is independent of OE# while a WSM operation is in progress. 3. RP# at GND 0.2V ensures the lowest deep power-down current. 4. A0 (latched by CAS#) at VIL provides the Manufacturer ID code. A0 (latched by CAS#) at VIH provides the Device ID code. All other addresses (row and column) should be set to zero. 5. Commands for erase, data program, or lock-block operations can only be completed successfully when V = VPPH1 or PP VPP = VPPH2. 6. While the WSM is running, RY/BY# stays at VOL until all operations are complete. RY/BY# goes to VOH when the WSM is not busy or in erase suspend mode. 7. RY/BY# may be at VOL while the WSM is busy performing various operations (for example, a Status Register read during a program operation). 8. The 28F016XD shares an identical device identifier with the 28F016XS. 9. Row (upper) addresses are latched via inputs A0-9 on the falling edge of RAS#. Column (lower) addresses are latched via inputs A0-9 on the falling edge of CAS#. Row addresses must be latched before column addresses are latched.
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28F016XD FLASH MEMORY
4.2 28F008SA--Compatible Mode Command Bus Definitions
First Bus Cycle Command Read Array Intelligent Identifier Read Compatible Status Register Clear Status Register Word Program Alternate Word Program Block Erase/Confirm Erase Suspend/Resume
ADDRESS AA = Array Address BA = Block Address IA = Identifier Address PA = Program Address X = Don't Care
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Second Bus Cycle Oper Addr AA IA X Data(4) AD ID CSRD Write Write Write Write PA PA BA X PD PD xxD0H xxD0H
Notes
Oper Write
Addr X X X X X X X X
Data(4) xxFFH xx90H xx70H xx50H xx40H xx10H xx20H xxB0H
Read Read Read
1 2 3
Write Write Write Write Write Write Write
DATA AD = Array Data CSRD = CSR Data ID = Identifier Data PD = Program Data
NOTES: 1. Following the Intelligent Identifier command, two read operations access the manufacturer and device signature codes. 2. The CSR is automatically available after device enters data program, erase, or suspend operations. 3. Clears CSR.3, CSR.4 and CSR.5. Also clears GSR.5 and all BSR.5, BSR.4 and BSR.2 bits. See Status Register definitions. 4. The upper byte of the data bus (D8-15) during command writes is a "Don't Care."
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28F016XD FLASH MEMORY
4.3 28F016XD--Enhanced Command Bus Definitions
First Bus Cycle Command Read Extended Status Register Lock Block/Confirm Upload Status Bits/Confirm 2 Notes 1 Oper Write Write Write Addr X X X Data(3) xx71H xx77H xx97H Second Bus Cycle Oper Read Write Write Addr RA BA X Data(3) GSRD BSRD xxD0H xxD0H
ADDRESS DATA BA = Block Address AD = Array Data RA = Extended Register Address BSRD = BSR Data PA = Program Address GSRD = GSR Data X = Don't Care NOTES: 1. RA can be the GSR address or any BSR address. See Figure 4 for the Extended Status Register memory map. 2. Upon device power-up, all BSR lock-bits come up locked. The Upload Status Bits command must be written to reflect the actual lock-bit status. 3. The upper byte of the data bus (D8-15) during command writes is a "Don't Care."
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28F016XD FLASH MEMORY
4.4 Compatible Status Register
WSMS 7 ESS 6 ES 5 DWS 4 VPPS 3 R 2 NOTES: CSR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy R 1
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R 0 RY/BY# output or WSMS bit must be checked to determine completion of an operation (erase, erase suspend, or data program) before the appropriate Status bit (ESS, ES or DWS) is checked for success. If DWS and ES are set to "1" during an erase attempt, an improper command sequence was entered. Clear the CSR and attempt the operation again.
CSR.6 = ERASE-SUSPEND STATUS 1 = Erase Suspended 0 = Erase In Progress/Completed CSR.5 = ERASE STATUS 1 = Error In Block Erasure 0 = Successful Block Erase CSR.4 = DATA-WRITE STATUS 1 = Error in Data Program 0 = Data Program Successful CSR.3 = VPP STATUS 1 = VPP Error Detect, Operation Abort 0 = VPP OK The VPPS bit, unlike an A/D converter, does not provide continuous indication of VPP level. The WSM interrogates VPP's level only after the Data Program or Erase command sequences have been entered, and informs the system if V PP has not been switched on. VPPS is not guaranteed to report accurate feedback between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min) and above VPPH2(max).
CSR.2-0 = RESERVED FOR FUTURE ENHANCEMENTS These bits are reserved for future use; mask them out when polling the CSR.
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WSMS 7
28F016XD FLASH MEMORY
4.5 Global Status Register
OSS 6 DOS 5 R 4 R 3 R 2 R 1 R 0
GSR.7 = WRITE STATE MACHINE STATUS 1 = Ready 0 = Busy
NOTES: RY/BY# output or WSMS bit must be checked to determine completion of an operation (block lock, suspend, Upload Status Bits, erase or data program) before the appropriate Status bit (OSS or DOS) is checked for success.
GSR.6 = OPERATION SUSPEND STATUS 1 = Operation Suspended 0 = Operation in Progress/Completed GSR.5 = DEVICE OPERATION STATUS 1 = Operation Unsuccessful 0 = Operation Successful or Currently Running GSR.4-0 = RESERVED FOR FUTURE ENHANCEMENTS These bits are reserved for future use; mask them out when polling the GSR.
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28F016XD FLASH MEMORY
4.6 Block Status Register
BS 7 BLS 6 BOS 5 R 4 R 3 VPPS 2 VPPL 1
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R 0 NOTES: RY/BY# output or BS bit must be checked to determine completion of an operation (block lock, suspend, erase or data program) before the appropriate Status bits (BOS, BLS) is checked for success.
BSR.7 = BLOCK STATUS 1 = Ready 0 = Busy
BSR.6 = BLOCK LOCK STATUS 1 = Block Unlocked for Program/Erase 0 = Block Locked for Program/Erase BSR.5 = BLOCK OPERATION STATUS 1 = Operation Unsuccessful 0 = Operation Successful or Currently Running BSR.2 = VPP STATUS 1 = VPP Error Detect, Operation Abort 0 = VPP OK BSR.1 = VPP LEVEL 1 = VPP Detected at 5.0V 10% 0 = VPP Detected at 12.0V 5% BSR.1 is not guaranteed to report accurate feedback between the VPPH1 and VPPH2 voltage ranges. Programs and erases with VPP between VPPLK(max) and VPPH1 (min), between VPPH1(max) and VPPH2(min), and above VPPH2(max) produce spurious results and should not be attempted. BSR.1 was a RESERVED bit on the 28F016SA.
BSR.4,3,0 = RESERVED FOR FUTURE ENHANCEMENTS These bits are reserved for future use; mask them out when polling the BSRs.
18
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5.0 ELECTRICAL SPECIFICATIONS 5.1 Absolute Maximum Ratings*
Temperature Under Bias ....................0C to +80C Storage Temperature ...................-65C to +125C VCC = 3.3V 0.3V Systems Sym TA VCC VPP V Parameter Operating Temperature, Commercial VCC with Respect to GND VPP Supply Voltage with Respect to GND Voltage on any Pin (except VCC,VPP) with Respect to GND Current into any Non-Supply Pin Output Short Circuit Current Notes 1 2 2,3 2,5 Min 0 -0.2 -0.2 -0.5 Max 70 7.0 14.0 VCC + 0.5 30 100
28F016XD FLASH MEMORY
NOTICE: This is a production datasheet. The specifications are subject to change without notice. Verify with your local Intel Sales office that you have the latest datasheet before finalizing a design. *WARNING: Stressing the device beyond the "Absolute Maximum Ratings" may cause permanent damage. These are stress ratings only. Operation beyond the "Operating Conditions" is not recommended and extended exposure beyond the "Operating Conditions" may affect device reliability.
Units C V V V
Test Conditions Ambient Temperature
I IOUT
5 4
mA mA
VCC = 5.0V 0.5V Systems Sym TA VCC VPP V I IOUT Parameter Operating Temperature, Commercial VCC with Respect to GND VPP Supply Voltage with Respect to GND Voltage on any Pin (except VCC,VPP) with Respect to GND Current into any Non-Supply Pin Output Short Circuit Current Notes 1 2 2,3 2,5 5 4 Min 0 -0.2 -0.2 -2.0 Max 70 7.0 14.0 7.0 30 100 Units C V V V mA mA Test Conditions Ambient Temperature
NOTES: 1. Operating temperature is for commercial product defined by this specification. 2. Minimum DC voltage is -0.5V on input/output pins. During transitions, this level may undershoot to -2.0V for periods <20 ns. Maximum DC voltage on input/output pins is VCC + 0.5V which, during transitions, may overshoot to VCC + 2.0V for periods <20 ns. 3. Maximum DC voltage on VPP may overshoot to +14.0V for periods <20 ns. 4. Output shorted for no more than one second. No more than one output shorted at a time. 5. This specification also applies to pins marked "NC."
19
28F016XD FLASH MEMORY
5.2 Capacitance
For a 3.3V 0.3V System: Sym CIN COUT CLOAD Parameter Capacitance Looking into an Address/Control Pin Capacitance Looking into an Output Pin Load Capacitance Driven by Outputs for Timing Specifications Notes 1 1 1,2 Typ 6 8 Max 8 12 50 Units pF pF pF
E
Test Conditions TA = +25C, f = 1.0 MHz TA = +25C, f = 1.0 MHz Notes 1 1 1,2 Typ 6 8 Max 8 12 100 Units pF pF pF Test Conditions TA = +25C, f = 1.0 MHz TA = +25C, f = 1.0 MHz
For 5.0V 0.5V System: Sym CIN COUT CLOAD Parameter Capacitance Looking into an Address/Control Pin Capacitance Looking into an Output Pin Load Capacitance Driven by Outputs for Timing Specifications
NOTE: 1. Sampled, not 100% tested. 2. To obtain iBIS models for the 28F016XD, please contact your local Intel/Distribution Sales Office.
20
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2.4 0.45
3.0
28F016XD FLASH MEMORY
5.3 Transient Input/Output Reference Waveforms
2.0 INPUT 0.8 TEST POINTS
2.0 OUTPUT 0.8
0533_05
AC test inputs are driven at VOH (2.4 VTTL) for a Logic "1" and VOL (0.45 VTTL) for a Logic "0." Input timing begins at VIH (2.0 VTTL) and VIL (0.8 VTTL). Output timing ends at VIH and VIL. Input rise and fall times (10% to 90%) <10 ns.
Figure 5. Transient Input/Output Reference Waveform for VCC = 5.0V 0.5V(1)
INPUT 0.0
1.5
TEST POINTS
1.5
OUTPUT
0533_06
AC test inputs are driven at 3.0V for a Logic "1" and 0.0V for a Logic "0." Input timing begins, and output timing ends, at 1.5V. Input rise and fall times (10% to 90%) <10 ns.
Figure 6. Transient Input/Output Reference Waveform for VCC = 3.3V 0.3V(2)
NOTES:
1. Testing characteristics for 28F016XD-85. 2. Testing characteristics for 28F016XD-95.
21
28F016XD FLASH MEMORY
5.4 DC Characteristics
VCC = 3.3V 0.3V, T A = 0C to +70C 3/5# = Pin Set High for 3.3V Operations Sym Parameter Notes ICC1 VCC Word Read Current 1,4,5
E
Min Typ 50 Max 70 Unit mA Test Condition VCC = VCC Max RAS#, CAS# = VIL RAS#, CAS#, Addr. Cycling @ tRC = min IOUT = 0 mA Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS#, RP# = V IH WP#, 3/5# = VIL or VIH VCC = VCC Max CAS# = VIH RAS# = VIL RAS#, Addr. Cycling @ tRC = min Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS# = VIL CAS#, Addr. Cycling @ tPC = min IOUT = 0 mA Inputs = VIL or VIH VCC = VCC Max RAS# CAS# RP# = VCC 0.2V WP#, 3/5# = VCC 0.2V or GND 0.2V VCC = VCC Max CAS#, RAS# = VIL CAS#, RAS#, Addr. Cycling @ tRC = min Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS# = VIL IOUT = 0 mA Inputs = VIL or VIH VCC = VCC Max VIN = VCC or GND VCC = VCC Max VOUT = VCC or GND RP# = GND 0.2V 1,5 1 4 mA 1,5 50 80 mA
ICC2
VCC Standby Current
ICC3
VCC RAS#-Only Refresh Current
ICC4
VCC Fast Page Mode Word Read Current
1,4,5
40
70
mA
ICC5
VCC Standby Current
1,5
70
130
A
ICC6
VCC CAS#-beforeRAS# Refresh Current
1,5
40
15
mA
ICC7
VCC Standby Current (Self Refresh Mode)
1,5
40
10
mA
ILI ILO ICCD
Input Load Current Output Leakage Current VCC Deep PowerDown Current
1 1 1 2
1 10 10
A A A
22
5.4 DC Characteristics (Continued) VCC = 3.3V 0.3V, T A = 0C to +70C 3/5# = Pin Set High for 3.3V Operations Sym Parameter Notes Min
ICCW VCC Word Program Current 1,6
E
ICCE ICCES IPPS IPPD IPPW
28F016XD FLASH MEMORY
Typ 8 8
Max 12 17 12 17 4 10 200 5 15 25 10 20 200 0.8 VCC + 0.3 0.4
Unit mA mA mA mA mA A A A mA mA mA mA A V V V V V
Test Condition VPP = 12.0V 5% Program in Progress VPP = 5.0V 10% Program in Progress VPP = 12.0V 5% Block Erase in Progress VPP = 5.0V 10% Block Erase in Progress RAS#, CAS# = VIH Block Erase Suspended VPP VCC VPP > VCC RP# = GND 0.2V VPP = 12.0V 5% Program in Progress VPP = 5.0V 10% Program in Progress VPP = 12.0V 5% Block Erase in Progress VPP = 5.0V 10% Block Erase in Progress Block Erase Suspended
VCC Block Erase Current
1,6
6 9
VCC Erase Suspend Current VPP Standby/Read Current VPP Deep PowerDown Current VPP Word Program Current
1,2 1 1 1,6
1 1 30 0.2 10 15
IPPE
VPP Block Erase Current
1,6
4 14
IPPES VIL VIH VOL VOH1 VOH2 VPPLK
VPP Erase Suspend Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage
1 6 6 6 6 6 3,6 3 3 2.4 VCC0.2 0.0 4.5 11.4 2.0 -0.3 2.0
30
VCC = VCC Min IOL = 4.0 mA VCC = VCC Min IOH = -2.0 mA VCC = VCC Min IOH = -100 A
VPP Erase/Program Lock Voltage VPPH1 VPP during Program/ Erase Operations VPPH2 VPP during Program/ Erase Operations VLKO VCC Erase/Program Lock Voltage
1.5 5.0 12.0 5.5 12.6
V V V V
23
28F016XD FLASH MEMORY
NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at VCC = 3.3V, VPP = 12.0V or 5.0V, T = +25C. 2. ICCES is specified with the device de-selected. If the device is read while in erase suspend mode, current draw is the sum of ICCES and ICC1/ICC4. 3. Block erases, word programs and lock block operations are inhibited when VPP = VPPLK and not guaranteed in the ranges between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min) , and above VPPH2(max). 4. Automatic Power Saving (APS) reduces ICC1 and ICC4 to 3.0 mA typical in static operation. 5. CMOS inputs are either VCC 0.2V or GND 0.2V. TTL inputs are either VIL or VIH. 6. Sampled, but not 100% tested. Guaranteed by design.
E
24
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ICC1 ICC2 ICC3
28F016XD FLASH MEMORY
5.5 DC Characteristics
VCC = 5.0V 0.5V, T A = 0C to +70C 3/5# = Pin Set Low for 5.0V Operations Sym Parameter Notes VCC Word Read Current 1,4,5 Min Typ 90 Max 120 Unit mA Test Condition VCC = VCC Max RAS#, CAS# = VIL RAS#, CAS#, Addr. Cycling @ tRC = min IOUT = 0 mA Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS#, RP# = V IH WP#, 3/5# = VIL or VIH VCC = VCC Max CAS# = VIH RAS# = VIL RAS#, Addr. Cycling @ tRC = min Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS# = VIL CAS#, Addr. Cycling @ tPC = min IOUT = 0 mA Inputs = VIL or VIH VCC = VCC Max RAS#,CAS#,RP# = VCC 0.2V WP#, 3/5# = VCC 0.2V or GND 0.2V VCC = VCC Max CAS#, RAS# = VIL CAS#, RAS#, Addr. Cycling @ tRC = min Inputs = TTL or CMOS VCC = VCC Max RAS#, CAS# = VIL IOUT = 0 mA Inputs = VIL or VIH VCC = VCC Max VIN = VCC or GND VCC = VCC Max VOUT = VCC or GND RP# = GND 0.2V
VCC Standby Current
1,5
2
4
mA
VCC RAS#-Only Refresh Current
1,5
90
145
mA
ICC4
VCC Fast Page Mode Word Read Current
1,4,5
80
130
mA
ICC5
VCC Standby Current
1,5
70
130
A
ICC6
VCC CAS#-beforeRAS# Refresh Current
1,5
50
15
mA
ICC7
VCC Standby Current (Self Refresh Mode)
1,5
50
10
mA
ILI ILO ICCD
Input Load Current Output Leakage Current VCC Deep Power-Down Current
1 1 1 2
1 10 10
A A A
25
28F016XD FLASH MEMORY
5.5 DC Characteristics (Continued) VCC = 5.0V 0.5V, T A = 0C to +70C 3/5# = Pin Set Low for 5.0V Operations
Sym ICCW Parameter VCC Word Program Current Notes 1,6 Min Typ 25 25 ICCE VCC Block Erase Current 1,6 18 20 ICCES IPPS IPPD IPPW VCC Erase Suspend Current VPP Standby/Read Current VPP Deep Power-Down Current VPP Word Program Current 1 1,6 1,2 1 2 1 30 0.2 7 17 IPPE VPP Block Erase Current 1,6 5 16 IPPES VIL VIH VOL VOH1 VOH2 VPPLK VPP Erase/Program Lock Voltage VPPH1 VPP during Program/Erase Operations VPPH2 VPP during Program/Erase Operations VLKO VCC Erase/Program Lock Voltage 26 VPP Erase Susp.Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage 1 6 6 6 6 6 3,6 3 3 0.85 VCC VCC- 0.4 0.0 4.5 11.4 2.0 5.0 12.0 1.5 5.5 12.6 -0.5 2.0 30 Max 35 40 25 30 4 10 200 5 12 22 10 20 200 0.8 VCC + 0.5 0.45 Unit mA mA mA mA mA A A A mA mA mA mA A V V V V V V V V V VCC = VCC Min IOL = 5.8 mA VCC = VCC Min IOH = -2.5 mA VCC = VCC Min IOH = -100 A
E
Test Condition VPP = 12.0V 5% Word Program in Progress VPP = 5.0V 10% Word Program in Progress VPP = 12.0V 5% Block Erase in Progress VPP = 5.0V 10% Block Erase in Progress RAS#, CAS# = VIH Block Erase Suspended VPP VCC VPP > VCC RP# = GND 0.2V VPP = 12.0V 5% Word Program in Progress VPP = 5.0V 10% Word Program in Progress VPP = 12.0V 5% Block Erase in Progress VPP = 5.0V 10% Block Erase in Progress Block Erase Suspended
NOTES: 1. All currents are in RMS unless otherwise noted. Typical values at VCC = 5.0V, VPP = 12.0V or 5.0V, T = +25C. These currents are specified for a CMOS rise/fall time (10% to 90%) of <5 ns and a TTL rise/fall time of <10 ns. 2. ICCES is specified with the device de-selected. If the device is read while in Erase Suspend mode, current draw is the sum of ICCES and ICC1/ICC4. 3. Block erases, word programs and lock block operations are inhibited when VPP = VPPLK and not guaranteed in the ranges between VPPLK(max) and VPPH1(min), between VPPH1(max) and VPPH2(min), and above VPPH2(max). 4. Automatic Power Saving (APS) reduces ICC1 and ICC4 to 1 mA typical in static operation. 5. CMOS inputs are either VCC 0.2V or GND 0.2V. TTL inputs are either VIL or VIH. 6. Sampled, not 100% tested. Guaranteed by design.
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28F016XD FLASH MEMORY
27
28F016XD FLASH MEMORY
5.6 AC Characteristics(11)
VCC = 3.3V 0.3V, T A = 0C to +70C Read, Program, Read-Modify-Program and Refresh Cycles (Common Parameters) Versions Sym tRP tCP tASR tRAH tASC tCAH tAR tRAD tCRP tOED tDZO tDZC tT Read Cycle Versions Sym tRC(R) tRAS(R) tCAS(R) tRCD(R) tRSH(R) tCSH(R) tRAC tCAC tAA tOEA Parameter Random read cycle time RAS# pulse width (reads) CAS# pulse width (reads) RAS# to CAS# delay time (reads) RAS# hold time (reads) CAS# hold time (reads) Access time from RAS# Access time from CAS# Access time from column address OE# access time 1,8 1,2 8 1 Notes Parameter RAS# precharge time CAS# precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address hold time referenced to RAS# RAS# to column address delay time CAS# to RAS# precharge time OE# to data delay OE# delay time from data-in CAS# delay time from data-in Transition time (rise and fall) 10 10 10 10 9 9 9 9 3,9 8,9 Notes
E
28F016XD-95 Min 10 15 0 15 0 20 35 15 10 30 0 0 2 4 15 Max ns ns ns ns ns ns ns ns ns ns ns ns ns Units
28F016XD-95 Min 105 95 45 15 30 95 95 40 75 40 50 Max
Units
ns ns ns ns ns ns ns ns ns ns
28
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Sym tROH tRCS tRCH tRRH tRAL tCAL tCLZ tOH tOHO tOFF tOEZ tCDD Write Cycle
28F016XD FLASH MEMORY
Read Cycle (Continued) Versions Parameter RAS# hold time referenced to OE# Read command setup time Read command hold time referenced to CAS# Read command hold time referenced to RAS# Column address to RAS# lead time Column address to CAS# lead time CAS# to output in Low-Z Output data hold time Output data hold time from OE# Output buffer turn-off delay Output buffer turn off delay time from OE# CAS# to data-in delay time 30 4 6,10 6,10 9 9 Notes 28F016XD-95 Min 40 5 0 0 15 75 0 0 0 30 30 Max ns ns ns ns ns ns ns ns ns ns ns ns Units
Versions Sym tRC(W) tRAS(W) tCAS(W) tRCD(W) tRSH(W) tCSH(W) tWCS tWCH tWCR tWP tRWL tCWL tDS tDH tDHR Parameter Random write cycle time RAS# pulse width (writes) CAS# pulse width (writes) RAS# to CAS# delay time (writes) RAS# hold time (writes) CAS# hold time (writes) Write command set-up time Write command hold time Write command hold time referenced to RAS# Write command pulse width Write command to RAS# lead time Write command to CAS# lead time Data-in set-up time Data-in hold time Data-in hold time referenced to RAS# 7,9 7,9 3,9 3 5 1 Notes
28F016XD-95 Min 90 80 65 15 65 80 0 15 30 15 65 65 0 15 30 15 Max
Units
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 29
28F016XD FLASH MEMORY
Read-Modify-Write Cycle Versions Sym tRWC tRWD tCWD tAWD tOEH Parameter Read-modify-write cycle time RAS# to WE# delay time CAS# to WE# delay time Column address to WE# delay time OE# command hold time Notes 10 5,10 5,10 5,9,10 10
E
28F016XD-95 Min 200 125 75 105 15 Max ns ns ns ns ns Units Versions 28F016XD-95 Notes Min 75 80 95 80 85 10 0 75 80 Max ns ns ns ns ns ns ns ns Units
Fast Page Mode Cycle
Sym tPC(R) tPC(W) tRASP(R) tRASP(W) tCPA tCPW tCPRH(R) tCPRH(W)
Parameter Fast page mode cycle time (reads) Fast page mode cycle time (writes) RAS# pulse width (reads) RAS# pulse width (writes) Access time from CAS# precharge WE# delay time from CAS# precharge RAS# hold time from CAS# precharge (reads) RAS# hold time from CAS# precharge (writes)
Fast Page Mode Read-Modify-Write Cycle Versions Sym tPRWC Parameter Fast page mode read-modify-write cycle time Notes 10 28F016XD-95 Min 170 Max ns Units
30
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Sym tCSR tCHR tWRP tWRH tRPC tRASS tRPS tCPN tCHS Refresh
28F016XD FLASH MEMORY
Refresh Cycle Versions Parameter CAS# set-up time (CAS#-before-RAS# refresh) CAS# hold time (CAS#-before-RAS# refresh) WE# setup time (CAS#-before-RAS# refresh) WE# hold time (CAS#-before-RAS# refresh) RAS# precharge to CAS# hold time RAS# pulse width (self-refresh mode) RAS# precharge time (self-refresh mode) CAS# precharge time (self-refresh mode) CAS# hold time (self-refresh mode) Notes 10 10 10 10 10 10 10 10 10 28F016XD-95 Min 10 10 10 10 10 0 10 10 0 Max ns ns ns ns ns ns ns ns ns Units
Versions Sym tREF Refresh period Parameter Notes 10
28F016XD-95 Min Max
Units
ms
Misc. Specifications Versions Parameter RP# high to RAS# going low RP# set-up to WE# going low VPP set-up to CAS# high at end of write cycle WE# high to RY/BY# going low RP# hold from valid status register data and RY/BY# high VPP hold from valid status register data and RY/BY# high Notes 10 10 10 10 10 10 0 0 28F016XD-95 Min 480 480 100 100 Max ns ns ns ns ns ns Units
31
28F016XD FLASH MEMORY
NOTES: 1. 2. 3. 4. 5. Assumes that tRCD tRCD(max). tAR, tWCR, tDHR are referenced to tRAD(max).
E
Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point.
tOFF(max) defines the time at which the output achieves the open circuit condition and is not referenced to V or VOL. OH tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If tWCS tWCS(min) the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tCWD tCWD(min), tRWD tRWD(min), tAWD tAWD(min), then the cycle is a read-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions are satisfied, the condition of the data out is indeterminate. Either tRCH or tRRH must be satisfied for a read cycle. These parameters are referenced to the CAS# leading edge in early write cycles and to the WE# leading edge in readwrite cycles. Operation within the tRAD(max) limit ensures that tRAC(max) can be met, tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit, then the access time is controlled by tAA. Refer to command definition tables for valid address and data values.
6. 7. 8. 9.
10. Sampled, but not 100% tested. Guaranteed by design. 11. See AC Input/Output Reference Waveforms for timing measurements.
32
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Sym tRP tCP tASR tRAH tASC tCAH tAR tRAD tCRP tOED tDZO tDZC tT
28F016XD FLASH MEMORY
5.7 AC Characteristics(11)
VCC = 5.0V 0.5V, T A = 0C to +70C Read, Write, Read-Modify-Write and Refresh Cycles (Common Parameters) Versions Parameter RAS# precharge time CAS# precharge time Row address set-up time Row address hold time Column address set-up time Column address hold time Column address hold time referenced to RAS# RAS# to column address delay time CAS# to RAS# precharge time OE# to data delay OE# delay time from data-in CAS# delay time from data-in Transition time (rise and fall) 10 10 10 10 9 9 9 9 3,9 8,9 Notes 28F016XD-85 Min 10 15 0 15 0 20 35 15 10 30 0 0 2 4 15 Max ns ns ns ns ns ns ns ns ns ns ns ns ns Units
33
28F016XD FLASH MEMORY
Read Cycle Versions Sym tRC(R) tRAS(R) tCAS(R) tRCD(R) tRSH(R) tCSH(R) tRAC tCAC tAA tOEA tROH tRCS tRCH tRRH tRAL tCAL tCLZ tOH tOHO tOFF tOEZ tCDD Parameter Random read cycle time RAS# pulse width (reads) CAS# pulse width (reads) RAS# to CAS# delay time (reads) RAS# hold time (reads) CAS# hold time (reads) Access time from RAS# Access time from CAS# Access time from column address OE# access time RAS# hold time referenced to OE# Read command setup time Read command hold time referenced to CAS# Read command hold time referenced to RAS# Column address to RAS# lead time Column address to CAS# lead time CAS# to output in Low-Z Output data hold time Output data hold time from OE# Output buffer turn-off delay Output buffer turn off delay time from OE# CAS# to data-in delay time 6,10 6,10 9 9 10 10 10 4,10 10 10 30 35 5 0 0 15 65 0 0 0 1,8 1,2 8 1 Notes
E
28F016XD-85 Min 95 85 35 15 30 85 85 35 65 35 50 Max ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 30 30 ns ns ns Units
34
E
Write Cycle Versions Sym tRC(W) tRAS(W) tCAS(W) tRCD(W) tRSH(W) tCSH(W) tWCS tWCH tWCR tWP tRWL tCWL tDS tDH tDHR Parameter Random write cycle time RAS# pulse width (writes) CAS# pulse width (writes) RAS# to CAS# delay time (writes) RAS# hold time (writes) CAS# hold time (writes) Write command set-up time Write command hold time Write command hold time referenced to RAS# Write command pulse width Write command to RAS# lead time Write command to CAS# lead time Data-in set-up time Data-in hold time Data-in hold time referenced to RAS# 7,9 7,9 3,9 3 5 1 Notes
28F016XD FLASH MEMORY
28F016XD-85 Min 75 65 50 15 50 65 0 15 30 15 50 50 0 15 30 15 Max
Units
ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
Read-Modify-Write Cycle Versions Sym tRWC tRWD tCWD tAWD tOEH Parameter Read-modify-write cycle time RAS# to WE# delay time CAS# to WE# delay time Column address to WE# delay time OE# command hold time Notes 10 5,10 5,10 5,9,10 10 28F016XD-85 Min 175 115 65 100 15 Max ns ns ns ns ns Units
Fast Page Mode Cycle Versions Sym tPC(R) tPC(W) Parameter Fast page mode cycle time (reads) Fast page mode cycle time (writes) Notes 28F016XD-85 Min 65 65 Max ns ns Units
35
28F016XD FLASH MEMORY
Fast Page Mode Cycle Continued Versions Sym tRASP(R) tRASP(W) tCPA tCPW tCPRH(R) tCPRH(W) Parameter RAS# pulse width (reads) RAS# pulse width (writes) Access time from CAS# precharge WE# delay time from CAS# precharge RAS# hold time from CAS# precharge (reads) RAS# hold time from CAS# precharge (writes) 10 0 65 65 Notes
E
28F016XD-85 Min 85 65 Max 70 ns ns ns ns ns ns Units 28F016XD-85 Notes 10 Min 145 Max ns Units
Fast Page Mode Read-Modify-Write Cycle Versions Sym tPRWC Parameter Fast page mode read-modify-write cycle time
Refresh Cycle Versions Sym tCSR tCHR tWRP tWRH tRPC tRASS tRPS tCPN tCHS Refresh Versions Sym tREF Refresh period Parameter Notes 10 28F016XD-85 Min Max ms Units Parameter CAS# set-up time (CAS#-before-RAS# refresh) CAS# hold time (CAS#-before-RAS# refresh) WE# setup time (CAS#-before-RAS# refresh) WE# hold time (CAS#-before-RAS# refresh) RAS# precharge to CAS# hold time RAS# pulse width (self-refresh mode) RAS# precharge time (self-refresh mode) CAS# precharge time (self-refresh mode) CAS# hold time (self-refresh mode) Notes 10 10 10 10 10 10 10 10 10 28F016XD-85 Min 10 10 10 10 10 0 10 10 0 Max ns ns ns ns ns ns ns ns ns Units
36
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NOTES: 1. 2. 3. 4. 5.
28F016XD FLASH MEMORY
Misc. Specifications Versions Parameter RP# high to RAS# going low RP# set-up to WE# going low VPP set-up to CAS# high at end of write cycle WE# high to RY/BY# going low RP# hold from valid status register data and RY/BY# high VPP hold from valid status register data and RY/BY# high Notes 10 10 10 10 10 10 0 0 28F016XD-85 Min 300 300 100 100 Max ns ns ns ns ns ns Units
Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point. Assumes that tRCDtRCD(max). tAR, tWCR, tDHR are referenced to tRAD(max). tOFF(max) defines the time at which the output achieves the open circuit condition and is not referenced to V or VOL. OH tWCS, tRWD, tCWD and tAWD are non restrictive operating parameters. They are included in the datasheet as electrical characteristics only. If tWCStWCS(min) the cycle is an early write cycle and the data output will remain high impedance for the duration of the cycle. If tCWDtCWD(min), tRWDtRWD(min), tAWDtAWD(min), then the cycle is a read-write cycle and the data output will contain the data read from the selected address. If neither of the above conditions are satisfied, the condition of the data out is indeterminate. Either tRCH or tRRH must be satisfied for a read cycle. These parameters are referenced to the CAS# leading edge in early write cycles and to the WE# leading edge in readwrite cycles. Operation within the tRAD(max) limit ensures that tRAC(max) can be met, tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit, then the access time is controlled by tAA. Refer to command definition tables for valid address and data values.
6. 7. 8. 9.
10. Sampled, but not 100% tested. Guaranteed by design. 11. See AC Input/Output Reference Waveforms for timing measurements.
37
28F016XD FLASH MEMORY
5.8 AC Waveforms
t RC t RAS RAS# t RP
E
t CSH t RCD t RSH t CAS
t CRP
tT CAS#
t RAD t ASR
t RAL t CAL t ASC t CAH
t RAH
Address
Row
Column t RRH t RCS t RCH
WE#
t DZC t CDD OPEN
Din t DZO t OEA
t OED
OE#
tAA t CAC t OEZ tOHO tOFF tOH
t RAC
Dout
Dout
: Don't Care
0533-07
Figure 7. AC Waveforms for Read Operations
38
E
t t RAS# t t t CAS# T RCD t t t RSH RC RAS CSH CRP CAS t ASR t RAH t ASC t CAH
28F016XD FLASH MEMORY
t
RP
Address
Row
Column
t
WCS
t
WCH
WE# t DS t DH
Din
Din
OPEN Dout
OE# : Don't Care : Don't Care t _t WCS > WCS (min) 0528_08
Figure 8. AC Waveforms for Early Write Operations
39
28F016XD FLASH MEMORY
E
t t RC RAS t RP t t RCD t CSH t t RSH CRP CAS t ASC t CAH
RAS#
t CAS#
T
t
ASR
t
RAH
Address
Row t
Column RCS t CWL t t RWL
WP
WE# t DZC OPEN t DZO t QED
t
DS t Din t QEH DH
Din
OE#
t t
QEZ
CLZ Invalid Dout
Dout
: Don't Care
0533_09
Figure 9. AC Waveforms for Delayed Write Operations
40
E
t t RWC RAS
28F016XD FLASH MEMORY
t
RP
RAS#
t t T
RCD
t
CAS
t
CRP
CAS#
t
t
RAD t ASC
t
ASR
t
RAH
CAH
Address
Row
t
Column
t RCS t t CWD AWD RWD t CWL t RWL t WP
WE#
t DZC t t DS DH
Din
OPEN
t DZO t OED t OEA
Din
t OEH
OE#
t t AA t RAC CAC t OHO t OEZ
Dout
t CLZ
Dout
: Don't Care
0533_10
Figure 10. AC Waveforms for Read-Modify-Write Operations
41
28F016XD FLASH MEMORY
E
t RASP t CPRH t RP t t CAS t CP t PC t CAS t CP RSH t CAS t CRP t t t ASC CAL t CAH t t CAL t CAH
RAL t CAL
RAS# tT t t CSH
RCD
CAS# t t
Address
RAD
ASR
t
RAH
ASC
t ASC
t
CAH
Row
Column 1
Column 2
Column N
t
RCS
t
RCH
t
t RRH RCH t RCH
WE# t t t t t
DCZ CDD
DCZ CDD
DCZ t CDD
Din t
OPEN
DZO t OED t
OPEN
DZO t OED t DZO
OPEN
t QED
OE#
t
RAC
t t AA t t
t
t OH
OEA t
CPA t AA t OHO
t
t OH t OEA t t CAC
t CPA t AA t OEA t OHO t CAC t OFF t CLZ
t t OHO t
OH OFF
CAC CLZ OEZ Dout 1
OFF CLZ
t
OEZ Dout 2
t
QEZ Dout N
Dout
: Don't Care
0533_11
Figure 11. AC Waveforms for Fast Page Mode Read Operations 42
E
t
28F016XD FLASH MEMORY
RASP
t
RP
RAS#
t T
t t CSH
t
t CAS t CP
t PC t CAS t CP
RSH t CAS t RP
RCD
CAS#
t
ASR
t
RAH
t
ASC
t
CAH
t
ASC
t
CAH
t
ASC
t
CAH
Address
Row
Column 1
Column 2
Column N
t
WCS
t
WCH
t
WCS
t
WCH
t
WCS
t
WCH
WE#
t
DS
t
DH
t
DS
t
DH
t
DS
t
DH
Din
Din 1
Din 2
Din N
OPEN Dout
OE# : Don't Care : Don't Care t t WCS >= WCS (min)
0533_12
Figure 12. AC Waveforms for Fast Page Mode Early Write Operations
43
28F016XD FLASH MEMORY
E
t RASP
t
RP
RAS#
t T t
t t
CSH
CP
t
t PC
t CAS
CP
t
t
RSH
RCD
t
CAS
CAS
CAS#
t
t
RAD
ASR t RAH
t
ASC t CAH
t ASC t CAH
t
ASC t CAH
Address
Row
Column 1
t
t
Column 2
t
t
Column N
t
t
CWL
RCS
CWL
RCS
CWL
t RWL
RCS
WE#
t t t
DZC
WP t DZC
t t
WP
DS
t t
DZC
WP
DS t DH
t
DS DH
DH
Din
t DZO
t OED
Din 1
t
t
Din 2
DZO
t OED
Din N
t
t
DZO
t OED t OEH
OEH
OEH
OE#
t t t OEZ t t OEZ
CLZ
CLZ
CLZ
t
OEZ
Dout : Don't Care
Invalid Dout Invalid Dout Invalid Dout
0533_13
Figure 13. AC Waveforms for Fast Page Mode Delayed Write Operations 44
E
t RASP
28F016XD FLASH MEMORY
t
RP
RAS#
t t T
t
PRWC t
t CAS
t
t
RCD
CRP
CP
CP
t CAS
t
CAS
CAS#
t
t
RAD
ASR
t
ASC
t CAH
t
ASC
t CAH
t
ASC
t CAH
t
RAH
Address
Row
t RWD
Column 1
t t AWD
t CWD
t
Column 2
CWL
t
Column N
t CWL
t CPW
CPW t AWD
t
CWL
t RWL
t
t
t RCS
AWD
CWD
t
RCS
CWD
WE#
t t RCS
t
WP t DZC t
t
WP
t
t
t
WP
t
DZC
DS t DH
DS t DH
Din 2
DZC
DS t DH Din N
Din
t DZO t t OED
Din 2
t
DZO
t OED t CPA t
DZO t OED
t
OEH t
t
OEH
t OEA
t
OEH
OEA
OEA
OE#
t CAC t AA t
t CLZ
t
CAC t AA
t OHOt
t
CAC t AA t OHO
OHO t
t
CLZ
CLZ
t OEZ
OEZ
t
OEZ
Dout : Don't Care
Dout 1 Dout 2 Dout 3
0533_14
Figure 14. AC Waveforms for Fast Page Mode Read-Modify-Write Operations 45
28F016XD FLASH MEMORY
E
t t RC RAS t RP
RAS#
t
T
t
RPC
t
CRP
CAS#
t
ASR
t
RAH
Address
ROW
t
OFF
OPEN Dout
OE#,WE# : Don't Care : Don't Care
0533_15
Figure 15. AC Waveforms for RAS#-Only Refresh Operations
46
E
t t RP RC t t RP RAS t RAS
28F016XD FLASH MEMORY
t
RC t
RP
RAS#
t t RPC t CP t CSR t CHR t T t RPC t CP CSR t CHR t CRP
CAS#
t
t
WRH
t
WRP
t
WRP
WRH
WE#
Address
t
OFF
Dout
OPEN
OE#: Don't Care : Don't Care
0533_16
Figure 16. AC Waveforms for CAS#-before-RAS# Refresh Operations
47
28F016XD FLASH MEMORY
E
t RC t RP t t RC t RP t RAS t RC t RP RAS t RSH t CHR t CRP t t RAL CAH
t
RAS
RAS#
t T
t
RCD
CAS#
t t RAD
ASR t RAH
t
ASC
Address
Row
Column
t t RCS
RRH t
RCH
WE#
t
DZC
t
CDD
Din
t DZO
t
t OEA
QED
OE#
t CAC t t RAC t AA CLZ Dout t t OFF OH t QEZ t OHO
Dout
: Don't Care
0533_17
Figure 17. AC Waveforms for Hidden Refresh Operations
48
E
t RASS
28F016XD FLASH MEMORY
t
RPS
RAS#
t
RPC t CPN t CSR t CHS
CAS#
t
OFF
HI-Z
On
0533_18
Figure 18. AC Waveforms for Self-Refresh Operations
49
28F016XD FLASH MEMORY
5.9 Power-Up and Reset Timings
VCC POWER-UP
E
t YLPH
5.0V
RP# (P)
t YHPH
3/5#
(Y)
t PLYL
3.3V
4.5V
VCC
0V
(3V,5V)
t PL5V
0533_19
Figure 19. VCC Power-Up and RP# Reset Waveforms Symbol tPLYL tPLYH tYLPH tYHPH tPL5V tPL3V RP# Low to VCC at 4.5V (Minimum) RP# Low to VCC at 3.0V (Min) or 3.6V (Max) 2 0 s 3/5# Low (High) to RP# High 0 s Parameter RP# Low to 3/5# Low (High) Notes Min 0 Max Units s
NOTES: For Read Timings following Reset, see sections 5.6 and 5.7. 1. The tYLPH and/or tYHPH times must be strictly followed to guarantee all other read and write specifications for the 28F016XD 2. The power supply may start to switch concurrently with RP# going low.
50
E
Symbol tWHRH1 tWHRH3 Symbol tWHRH1 tWHRH3
28F016XD FLASH MEMORY
5.10 Erase and Word Program Performance(3,4)
VCC = 3.3V 0.3V, V PP = 5.0V 0.5V, T A = 0C to +70C Parameter Word Program Time Block Program Time Block Erase Time Erase Suspend Latency Time to Read VCC = 3.3V 0.3V, V PP = 12.0V 0.6V, T A = 0C to +70C Parameter Word Program Time Block Program Time Block Erase Time Erase Suspend Latency Time to Read VCC = 5.0V 0.5V, V PP = 5.0V 0.5V, T A = 0C to +70C Symbol tWHRH1 tWHRH3 Parameter Word Program Time Block Program Time Block Erase Time Erase Suspend Latency Time to Read VCC = 5.0V 0.5V, V PP = 12.0V 0.6V, T A = 0C to +70C Symbol tWHRH1 tWHRH3 Parameter Word Program Time Block Program Time Block Erase Time Erase Suspend Latency Time to Read Notes 2,5 2,5 2 Min 4.5 TBD 0.3 1.0 Typ(1) 6 0.2 0.6 7.0 Max TBD 1.0 10 40.0 Units s sec sec s Notes 2,5 2,5 2,5 Min TBD TBD TBD 1.0 Typ(1) 25.0 0.85 1.0 9.0 Max TBD TBD TBD 55.0 Units s sec sec s Notes 2,5 2,5 2 Min 5 TBD 0.3 1.0 Typ(1) 9 0.3 0.8 9.0 Max TBD 1.0 10 55.0 Units s sec sec s Notes 2,5 2,5 2,5 Min TBD TBD TBD 1.0 Typ(1) 35.0 1.2 1.4 12.0 Max TBD TBD TBD 75.0 Units s sec sec s
NOTES: 1. +25C, and nominal voltages. 2. Excludes system-level overhead. 3. These performance numbers are valid for all speed versions. 4. Sampled, but not 100% tested. Guaranteed by design. 5. Please contact Intel's Application Hotline or your local sales office for more information for current TBD information.
51
28F016XD FLASH MEMORY
6.0 MECHANICAL SPECIFICATIONS
E
048928.eps
Figure 20. Mechanical Specifications of the 28F016XD 56-Lead TSOP Type I Package Family: Thin Small Out-Line Package Symbol Minimum A A1 A2 b c D1 E e D L N Y Z 52 0.150 0.250 0 19.80 0.500 0.050 0.965 0.100 0.115 18.20 13.80 0.995 0.150 0.125 18.40 14.00 0.50 20.00 0.600 56 3 5 0.100 0.350 20.20 0.700 1.025 0.200 0.135 18.60 14.20 Millimeters Nominal Maximum 1.20 Notes
E
28F016XD FLASH MEMORY
APPENDIX A DEVICE NOMENCLATURE AND ORDERING INFORMATION
Product line designator for all Intel Flash products
E 2 8 F 0 1 6 XD - 8 5
Package E = TSOP
Device Density 016 = 16 Mbit Product Family X = Fast Flash
0533_21
Random Access Time (tRAC) at 5V VCC ns)
Device Type D = DRAM-Interface
Valid Combinations Order Code E28F016XD 85 NOTE: 1. See Section 5.3 for Transient Input/Output Reference Waveforms. VCC = 3.3V 0.3V, 50 pF load, 1.5V I/O Levels(1) E28F016XD-95 VCC = 5.0V 10%, 100 pF load, TTL I/O Levels(1) E28F016XD-85
53
28F016XD FLASH MEMORY
APPENDIX B ADDITIONAL INFORMATION(1,2)
Order Number 297372 292092 292123 292126 292131 292163 292168 292152 292165 294016 297508 Contact Intel/Distribution Sales Office Contact Intel/Distribution Sales Office Contact Intel/Distribution Sales Office Contact Intel/Distribution Sales Office Contact Intel/Distribution Sales Office Contact Intel/Distribution Sales Office Document/Tool
E
16-Mbit Flash Product Family User's Manual AP-357 Power Supply Solutions for Flash Memory AP-374 Flash Memory Write Protection Techniques AP-377 16-Mbit Flash Product Family Software Drivers, 28F016SA/SV/XD/XS AP-384 Designing with the 28F016XD AP-610 Flash Memory In-System Code and Data Update Techniques AP-614 Adapting DRAM Based Designs for the 28F016XD AB-58 28F016XD-Based SIMM Designs AB-62 Compiled Code Optimizations for Flash Memories ER-33 ETOXTM Flash Memory Technology--Insight to Intel's Fourth Generation Process Innovation
FLASHBuilder Utility 28F016XD Benchmark Utility Flash Cycling Utility 28F016XD iBIS Models 28F016XD VHDL/Verilog Models 28F016XD TimingDesigner* Library Files 28F016XD Orcad and ViewLogic Schematic Symbols
NOTE: 1. Please call the Intel Literature Center at (800) 548-4725 to request Intel documentation. International customers should contact their local Intel or distribution sales office. 2. Visit Intel's World Wide Web home page at http://www.Intel.com for technical documentation and tools.
54

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