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MCC
Features
l l l l l Fast Switching Speed Low Current Leakage Low Cost
omponents 21201 Itasca Street Chatsworth !"# $
% !"#
DL4154
Schottky Barrier Switching Diode
Compression Bond Construction Surface Mount Application
Maximum Ratings
l l Operation & Storage Temperature: -55 C to +150 C Maximum Thermal Resistance: 400k/W Junction to Ambient Reverse Voltage Peak Reverse Voltage Average Rectified Current Power Dissipation Junction Temperature Maximum Instantaneous Forward Volt. Maximum DC Reverse Current At Rated DC Blocking Volt. Typical Junction Capacitance Reverse Recovery Time VR VRM IO P TOT TJ VF IR CJ T rr 25V 35V 150mA 500mW 175 o C 1.0V 0.1uA 4pF 2nS IFM=10mA; T J=25 C T J=25 oC Measured at 1.0MHz, V R =4.0V IF=10mA V R =6V IR =1mA R L=100OHMS VR =25V
DIM A B C
o o o
MINIMELF
Cathode Mark
Electrical Characteristics @ 25oC Unless Otherwise Specified
Resistive Load f>50Hz
B A
C
DIMENSION INCHES MIN .134 .008 .055 MAX .142 .016 .059 MIN 3.40 .20 1.40 MM MAX 3.60 .40 1.50 NOTE
SUGGESTED SOLDER PAD LAYOUT
0.105
Pulse test: Pulse width 300 usec, Duty cycle 2%.
0.075"
0.030"
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DL4154
MCC
1000
500
Pd, POWER DISSIPATION (mW)
IF, FORWARD CURRENT (mA)
400
100
300
10
Tj = 100C
Tj = 25C
200
1.0
100
0.1
0 0 100 TA, AMBIENT TEMPERATURE (C) Fig. 1 Power Derating Curve 200
0.01
0
1 VF, FORWARD VOLTAGE (V) Fig. 2 Forward Characteristics
2
1.1
Tj = 25C f = 1.0MHz
10,000
RELATIVE CAPACITANCE RATIO [CTOT(VR)/CTOT(0V)]
IR, LEAKAGE CURRENT (nA)
1.0
1,000
0.9
100
0.8
10
0.7 0 2 4 6 8 10
1 0 100 200 Tj, JUNCTION TEMPERATURE (C) Fig. 4 Leakage Current vs Junction Temperature
VR, REVERSE VOLTAGE (V) Fig. 3 Relative Capacitance Variation
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