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| SHINDENGEN Super Fast Recovery Rectifiers Single D2FL40 400V 1.3A FEATURES SMT *oe Low noise *oe trr50ns APPLICATION *oe Switching power supply *oe DC/DC converter *oe Free Wheel *oe Home Appliances, Office Equipment *oe Telecommunication, Factory Automation *oe Small OUTLINE DIMENSIONS Case : 2F (Unit : mm) RATINGS *oeAbsolute Maximum Ratings (If not specified Tl=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -40*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage VRM 400 Average Rectified Forward Current 50Hz sine wave, R-load, Ta=25*Z On alumina substrate IO 1.3 50Hz sine wave, R-load, Ta=25*Z On glass-epoxy substrate 1.05 Peak Surge Forward Current IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 40 *oeElectrical Characteristics (If not specified Tl=25*Z) Item Symbol Conditions Forward Voltage VF IF =1.3A, Pulse measurement Reverse Current IR V=V , Pulse measurement R RM Reverse Recovery Time trr IF =0.5A,*@ I R =1A AEjl junction to lead Thermal Resistance AEja junction to ambient, On alumina substrate junction to ambient, On glass-epoxy substrate Unit *Z *Z V A A Ratings Unit Max.1.3 V Max.10 EA Max.50 ns Max.24 Max.90 *Z/W Max.120 Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd D2FL40 100 Forward Voltage 10 Forward Current IF [A] Tl=150C [MAX] Tl=150C [TYP] Tl=25C [MAX] Tl=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 Forward Voltage VF [V] D2FL40 2 Forward Power Dissipation DC D=0.8 Forward Power Dissipation PF [W] 0.5 1.5 0.3 0.2 1 0.05 0.1 SIN 0.5 0 0 0.5 1 1.5 2 2.5 Average Rectified Forward Current IO [A] Tj = Tjmax IO 0 tp D=tp /T T D2FL40 2 Derating Curve Average Rectified Forward Current IO [A] DC D=0.8 Alumina substrate Soldering land 2mm Conductor layer 20m Substrate thickness 0.64mm 1.5 0.5 SIN 0.3 1 0.2 0.1 0.5 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM IO 0 0 VR tp D=tp /T T D2FL40 1.6 Derating Curve Average Rectified Forward Current IO [A] DC 1.4 1.2 0.5 SIN 1 0.8 0.6 0.3 0.2 0.1 D=0.8 Glass-epoxy substrate Soldering land 2mm Conductor layer 35m 0.4 0.05 0.2 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [C] VR = VRM IO 0 0 VR tp D=tp /T T D2FL40 Peak Surge Forward Capability IFSM 80 10ms 10ms 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 60 40 20 0 1 2 5 10 20 50 100 Number of Cycles [cycles] D2FL40 Junction Capacitance 100 f=1MHz Tl=25C TYP per diode Junction Capacitance Cj [pF] 10 1 10 1 100 Reverse Voltage VR [V] |
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