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| TetraFET LAB MECHANICAL DATA Dimensions in mm. 0 .3 2 0 .2 4 0 .1 0 0 .0 2 16 m ax. 13 SEME D2282UK METAL GATE RF SILICON FET GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 750mW - 6V - 1GHz SINGLE ENDED FEATURES * SIMPLIFIED AMPLIFIER DESIGN * SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss 1 .7 0 m ax. 10 m ax. 6 .7 6 .3 3 .1 2 .9 4 3 .7 7 .3 3 .3 6 .7 * SIMPLE BIAS CIRCUITS * LOW NOISE (Typical < 2dB NF) * HIGH GAIN - 8dB MINIMUM * SURFACE MOUNT 3 1 2 1 .0 5 0 .8 5 2 .3 0 4 .6 0 0 .8 0 0 .6 0 APPLICATIONS * VHF/UHF COMMUNICATIONS from DC to 2.5 GHz SOT-223 PIN 1 PIN 3 GATE SOURCE PIN 2 PIN 4 DRAIN DRAIN ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 2W 40V 20V 400mA -65 to 125C 150C Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/96 LAB ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min. BVDSS IDSS IGSS gfs GPS VSWR Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Load Mismatch Tolerance Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 VGS = 20V ID = 10mA VDS = 10V PO = 750mW VDS = 6V f = 1GHz VDS = 0V f = 1MHz VDS = 12.5V f = 1MHz VDS = 12.5V f = 1MHz VGS = 0 VGS = 0 VGS = -5V IDQ = 75mA VDS = 0 VDS = VGS ID = 0.2A 1 0.18 8 40 10:1 12 10 1 pF 40 1 1 5 SEME D2282UK Typ. Max. Unit V mA A V mhos dB % -- VGS(th) Gate Threshold Voltage* * Pulse Test: Pulse Duration = 300 s , Duty Cycle 2% THERMAL DATA RTHj-case Thermal Resistance Junction - Case Max. 70C / W Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/96 |
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