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| CMLT2207 SURFACE MOUNT PICOminiTM DUAL,COMPLEMENTARY SILICON TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMLT2207 consists of one 2N2222A NPN silicon transistor and one individual isolated complementary 2N2907A PNP silicon transistor, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface mount package. This PICOminiTM device has been designed for small signal general purpose amplifier and switching applications. MARKING CODE: L70 NPN (Q1) 75 40 6.0 600 350 -65 to +150 357 PNP (Q2) 60 60 5.0 UNITS V V V mA mW C C/W SOT-563 CASE MAXIMUM RATINGS: Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance (TA=25C) SYMBOL VCBO VCEO VEBO IC PD TJ,Tstg JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25C unless otherwise noted) SYMBOL ICBO ICBO ICBO ICBO IEBO ICEV ICEV BVCBO BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) hFE hFE hFE hFE hFE hFE TEST CONDITIONS VCB=60V VCB=50V VCB=60V, TA=125C VCB=50V, TA=125C VEB=3.0V VCE=60V, VEB(OFF)=3.0V VCE=30V, VEB(OFF)=500mV IC=10A IC=10mA IE=10A IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VCE=10V, IC=0.1mA VCE=10V, IC=1.0mA VCE=10V, IC=10mA VCE=10V, IC=150mA VCE=1.0V, IC=150mA VCE=10V, IC=500mA NPN (Q1) MIN MAX 10 10 10 10 75 40 6.0 0.3 1.0 0.6 1.2 2.0 35 50 75 100 300 50 40 PNP (Q2) MIN MAX 10 10 50 60 60 5.0 0.4 1.6 1.3 2.6 75 100 100 100 300 50 UNITS nA nA nA nA nA nA nA V V V V V V V R1 (13-November 2002) CMLT2207 Central SYMBOL fT fT Cob Cib Cib hie hie hre hre hfe hfe hoe hoe rb'Cc NF ton td tr toff ts ts tf tf TM Semiconductor Corp. TEST CONDITIONS VCE=20V, IC=20mA, f=100MHz VCE=20V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1.0MHz VEB=0.5V, IC=0, f=1.0MHz VEB=2.0V, IC=0, f=1.0MHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCE=10V, IC=1.0mA, f=1.0kHz VCE=10V, IC=10mA, f=1.0kHz VCB=10V, IE=20mA, f=31.8MHz VCE=10V, IC=100A, RS=1.0k, f=1.0kHz VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=30V, VBE=0.5V, IC=150mA, IB1=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA VCC=30V, IC=150mA, IB1=IB2=15mA VCC=6.0V, IC=150mA, IB1=IB2=15mA SURFACE MOUNT PICOminiTM DUAL,COMPLEMENTARY SILICON TRANSISTORS NPN (Q1) MIN MAX 300 8.0 25 2.0 8.0 0.25 1.25 8.0 4.0 50 300 75 375 5.0 35 25 200 150 4.0 10 25 225 60 PNP (Q2) MIN MAX 200 8.0 30 45 10 40 100 80 30 UNITS MHz MHz pF pF pF k k x10-4 x10-4 mhos mhos ps dB ns ns ns ns ns ns ns ns SOT-563 CASE - MECHANICAL OUTLINE D A 6 E 5 E 4 B G F 1 2 3 C H R0 LEAD CODE: 1) EMITTER Q1 2) BASE Q1 3) COLLECTOR Q2 4) EMITTER Q2 5) BASE Q2 6) COLLECTOR Q1 MARKING CODE: L70 R1 (13-November 2002) |
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