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| CM900DU-24NF Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Mega Power DualTM IGBTMOD 900 Amperes/1200 Volts TC MEASURED POINTS (THE SIDE OF CU BASEPLATE) P (8 PLACES) U H A D G H L K C2E1 C S G E T J E2 C1 U V H G H H H H G H R (9 PLACES) M L F E G CB E C J F LABEL Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: High Power UPS Large Motor Drives Utility Interface Inverters Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM900DU-24NF is a 1200V (VCES), 900 Ampere Dual IGBTMOD Power Module. Type CM Current Rating Amperes 900 VCES Volts (x 50) 24 C2 C2E1 E2 C1 G2 E2 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 5.91 5.10 1.670.01 5.410.01 6.54 2.910.01 1.65 0.55 Millimeters 150.0 129.5 42.50.25 137.50.25 166.0 74.00.25 42.0 14.0 Dimensions J K L M P R U V Inches 1.500.01 0.16 Millimeters 38.00.25 4.0 1.36 +0.04/-0.02 34.6 +1.0/-0.5 0.0750.08 0.26 M6 Metric 0.62 0.71 1.90.2 6.5 M6 15.7 18.0 Housing Type (J.S.T MFG. CO. L . TD) S = VHR-2N T = VHR-5N 1 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900DU-24NF Mega Power DualTM IGBTMOD 900 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (TC = 25C) Peak Collector Current (Tj 150C) Emitter Current (TC = 25C)** Peak Emitter Current** Maximum Collector Dissipation (Tj < 150C) (TC' = 25C) Mounting Torque, M6 Mounting Screws Mounting Torque, M6 Main Terminal Screw Weight (Typical) Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM PC - - - Viso CM900DU-24NF -40 to 150 -40 to 125 1200 20 900 1800* 900 1800* 5950 40 40 1400 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage (Without Lead Resistance) Module Lead Resistance Total Gate Charge Emitter-Collector Voltage** Symbol ICES IGES VGE(th) VCE(sat) (Chip) R(lead) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 90mA, VCE = 10V IC = 900A, VGE = 15V, Tj = 25C IC = 900A, VGE = 15V, Tj = 125C IC = 900A, Terminal-chip VCC = 600V, IC = 900A, VGE = 15V IE = 900A, VGE = 0V Min. - - 6 - - - - - Typ. - - 7 1.9 2.1 0.143 4800 - Max. 1 0.5 8 2.5 - - - 3.4 Units mA A Volts Volts Volts m nC Volts Dynamic Electrical Characteristics, Tj = 25C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 900A, IE = 900A, VGE1 = VGE2 = 15V, RG = 1.0 , Inductive Load Switching Operation VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 50 Max. 140 16 3 300 200 800 300 500 - Units nF nF nF ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900DU-24NF Mega Power DualTM IGBTMOD 900 Amperes/1200 Volts Thermal and Mechanical Characteristics, Tj = 25C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c')Q Rth(j-c')D Rth(c-f) Test Conditions Per IGBT 1/2 Module, TC Reference Point Under Chip Thermal Resistance, Junction to Case Per FWDi 1/2 Module, TC Reference TC Reference Point Under Chip Contact Thermal Resistance Per 1/2 Module, Thermal Grease Applied - 0.016 - C/W - - 0.034 C/W Min. - Typ. - Max. 0.021 Units C/W OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 1800 COLLECTOR CURRENT, IC, (AMPERES) 13 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) 1600 1400 VGE = 20V 15 Tj = 25oC 12 1800 1600 1400 1200 1000 800 600 400 200 VCE = 10V Tj = 25C Tj = 125C 5 4 VGE = 15V Tj = 25C Tj = 125C 1200 1000 800 600 400 200 0 0 1 2 3 4 5 6 7 8 9 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 2 11 10 1 8 9 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 0 300 600 900 1200 1500 1800 COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 104 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 103 VGE = 0V Cies 8 6 4 2 IC = 900A IC = 360A IC = 1800A 102 103 101 Coes Cres 100 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 102 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-1 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 3 Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM900DU-24NF Mega Power DualTM IGBTMOD 900 Amperes/1200 Volts HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 104 GATE-EMITTER VOLTAGE, VGE, (VOLTS) REVERSE RECOVERY TIME, trr, (ns) SWITCHING TIME, (ns) 103 VCC = 600V VGE = 15V RG = 1.0 Tj = 125C Inductive Load 103 103 20 IC = 900A tf Irr 16 12 8 4 VCC = 400V VCC = 600V td(off) 102 trr 102 VCC = 600V VGE = 15V RG = 1.0 Tj = 25C Inductive Load td(on) 102 tr 101 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 101 101 102 EMITTER CURRENT, IE, (AMPERES) 101 103 0 0 1000 2000 3000 4000 5000 6000 7000 GATE CHARGE, QG, (nC) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) Per Unit Base Rth(j-c) = 0.021C/W (IGBT) Rth(j-c) = 0.034C/W (FWDi) Single Pulse TC = 25C SWITCHING LOSS, ESW(on), ESW(off), (mJ/PULSE) 101 10-3 10-2 10-1 100 101 103 SWITCHING LOSS VS. COLLECTOR CURRENT (TYPICAL) VCC = 600V VGE = 15V Tj = 125C RG = 1.0 ESW(on) ESW(off) Inductive Load 102 SWITCHING LOSS, Err, (mJ/PULSE) SWITCHING LOSS VS. EMITTER CURRENT (TYPICAL) VCC = 600V VGE = 15V Tj = 125C RG = 1.0 Inductive Load 100 102 10-1 10-1 101 101 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 100 101 102 COLLECTOR CURRENT, IC, (AMPERES) 103 100 101 102 EMITTER CURRENT, IE, (AMPERES) 103 4 |
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