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CM50DU-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM U-Series Module 50 Amperes/1200 Volts N A D Q - (2 PLACES) P - NUTS (3 PLACES) E C2E1 E2 C1 E2 G2 CM F G H B G1 E1 F M K K J R C L Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM50DU-24H is a 1200V (VCES), 50 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 50 VCES Volts (x 50) 24 G2 E2 C2E1 E2 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.7 1.89 Millimeters 94.0 48.0 Dimensions J K L M N P Q R Inches 0.53 0.91 1.13 0.67 0.28 M5 0.26 Dia. 0.02 Millimeters 13.5 23.0 28.7 17.0 7.0 M5 6.5 Dia. 4.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 3.150.01 0.43 0.16 0.71 0.02 80.00.25 11.0 4.0 18.0 0.5 41 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24H Dual IGBTMODTM U-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM50DU-24H -40 to 150 -40 to 125 1200 20 50 100* 50 100* 400 31 40 310 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Voltage Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES IGES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 5mA, VCE = 10V IC = 50A, VGE = 15V, Tj = 25C IC = 50A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 600V, IC = 50A, VGE = 15V IE = 50A, VGE = 0V Min. - - 4.5 - - - - Typ. - - 6 2.9 2.85 187 - Max. 1 0.5 7.5 3.7 - - 3.2 Units mA A Volts Volts Volts nC Volts **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Resistive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 600V, IC = 50A, VGE1 = VGE2 = 15V, RG = 6.3 , Resistive Load Switching Operation IE = 50A, diE/dt = -100A/s IE = 50A, diE/dt = -100A/s VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 0.28 Max. 7.5 2.6 1.5 80 200 150 350 300 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** **Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Contact Thermal Resistance Symbol Rth(j-c)Q Rth(j-c)D Rth(c-f) Test Conditions Per IGBT 1/2 Module Per FWDi 1/2 Module Per Module, Thermal Grease Applied Min. - - - Typ. - - 0.035 Max. 0.31 0.7 - Units C/W C/W C/W 42 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24H Dual IGBTMODTM U-Series Module 50 Amperes/1200 Volts OUTPUT CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 100 COLLECTOR CURRENT, IC, (AMPERES) 80 60 VGE = 20V 11 60 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 100 15 COLLECTOR CURRENT, IC, (AMPERES) 5 VCE = 10V Tj = 25C Tj = 125C VGE = 15V Tj = 25C Tj = 125C 12 4 3 2 1 60 40 20 10 40 20 0 9 8 0 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 4 8 12 16 20 0 20 40 60 80 100 GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) 10 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 102 Tj = 25C 102 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) VGE = 0V f = 1MHz 8 6 4 2 IC = 100A EMITTER CURRENT, IE, (AMPERES) 101 Cies IC = 50A 101 100 Coes Cres 10-1 IC = 20A 0 0 4 8 12 16 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 100 1.0 1.5 2.0 2.5 3.0 3.5 4.0 10-2 10-1 100 101 102 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) di/dt = -100A/sec Tj = 25C REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE 103 REVERSE RECOVERY TIME, trr, (ns) 103 VCC = 600V VGE = 15V RG = 6.3 Tj = 125C tf td(off) 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) IC = 50A SWITCHING TIME, (ns) 15 VCC = 400V VCC = 600V 102 td(on) tr 102 trr 101 10 101 Irr 5 100 100 101 COLLECTOR CURRENT, IC, (AMPERES) 102 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 50 100 150 200 250 GATE CHARGE, QG, (nC) 43 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DU-24H Dual IGBTMODTM U-Series Module 50 Amperes/1200 Volts NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) 10-3 101 10-2 10-1 100 101 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS ( IGBT) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-3 101 10-2 10-1 100 101 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.31C/W 100 Single Pulse TC = 25C Per Unit Base = Rth(j-c) = 0.7C/W 10-1 10-1 10-1 10-1 10-2 10-2 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3 10-3 10-5 TIME, (s) 10-4 10-3 10-3 44 |
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