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| MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE CM200E3U-24F IC ................................................................... 200A VCES ......................................................... 1200V Insulated Type 1-element in a pack APPLICATION Brake OUTLINE DRAWING & CIRCUIT DIAGRAM 108 93 0.25 14 14 14 4 Tc measured point Dimensions in mm 6 10.5 (8.25) E2 G2 0.25 (18) G1 E1 C2 E1 E2 C1 15.85 48 CM 62 0.5 0.5 25 3-M6 NUTS 25 21.5 2.5 1MAX 4-6.5 MOUNTING HOLES 18 7 18 7 18 8.5 RTC C2E1 E2 C1 29 -0.5 +1.0 22 LABEL CIRCUIT DIAGRAM Mar.2002 E2 G2 TAB #110. t=0.5 MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) VRRM IF IFM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Repetitive peak reverse voltage Forward current Junction temperature Storage temperature Isolation voltage Torque strength Weight G-E Short C-E Short TC = 25C Pulse TC = 25C Pulse TC = 25C Clamp diode part TC = 25C Pulse Conditions Ratings 1200 20 200 400 200 400 830 1200 200 400 -40 ~ +150 -40 ~ +125 2500 3.5 ~ 4.5 3.5 ~ 4.5 400 Unit V V A A W V A C C V N*m N*m g (Note 2) (Note 2) Clamp diode part Clamp diode part (Note 2) Main terminal to base plate, AC 1 min. Main Terminal M6 Mounting holes M6 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) RG Rth(j-c)Q Rth(j-c)R Rth(j-c')Q VFM trr Qrr Rth(j-c)R Rth(c-f) Parameter Collector cutoff current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage External gate resistance Thermal resistance*1 Thermal resistance Forward voltage drop Reverse recovery time Reverse recovery charge Thermal resistance*1 Contact thermal resistance IGBT part FWDi part Tc measured point is just under the chips IF = 200A, Clamp diode part IF = 200A VCC = 600V, VGE1 = VGE2 = 15V RG = 1.6, Inductive load switching operation, Clamp diode part Clamp diode part Case to fin, Thermal compound applied*2 (1/2 module) Test conditions VCE = VCES, VGE = 0V IC = 20mA, VCE = 10V VGE = VCES, VCE = 0V Tj = 25C IC = 200A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 600V, IC = 200A, VGE = 15V VCC = 600V, IC = 200A VGE1 = VGE2 = 15V RG = 1.6, Inductive load switching operation IE = 200A IE = 200A, VGE = 0V Min. -- 5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1.6 -- -- -- -- -- -- -- -- Limits Typ. -- 6 -- 1.8 1.9 -- -- -- 2200 -- -- -- -- -- 12.2 -- -- -- -- -- -- -- 12.2 -- 0.04 Max. 1 7 40 2.4 -- 78 3.4 2.0 -- 300 80 500 300 200 -- 3.2 16 0.15 0.18 0.091*3 3.2 200 -- 0.18 -- Unit mA V A V nF nC ns ns C V C/W V ns C C/W Note 1. IE, VEC, trr, Qrr, die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Tc measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using Shin-etsu Silicone "G-746". *3 : If you use this value, Rth(f-a) should be measured just under the chips. Mar.2002 MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR CURRENT IC (A) Tj = 25C VGE = 20V 350 300 250 200 15 11 10 9.5 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 400 3 VGE = 15V Tj = 25C 2.5 Tj = 125C 2 1.5 1 0.5 0 9 8.5 150 100 8 50 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 100 200 300 400 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 Tj = 25C FREE-WHEEL DIODE AND CLAMP DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 7 Tj = 25C 4 EMITTER CURRENT IE (A) 5 3 2 3 IC = 400A 2 IC = 200A IC = 80A 102 7 5 3 2 1 0 6 8 10 12 14 16 18 20 101 0.5 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE-VCE CHARACTERISTICS (TYPICAL) 102 103 Cies HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 7 td(off) 5 tf 3 2 7 5 3 2 CAPACITANCE Cies, Coes, Cres (nF) 7 5 SWITCHING TIMES (ns) 3 2 td(on) 101 7 5 3 2 102 tr Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 125C Inductive load 2 3 5 7 102 2 3 5 7 103 Coes Cres 100 7 5 3 2 101 7 5 3 2 VGE = 0V 10-1 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) 100 1 10 COLLECTOR CURRENT IC (A) Mar.2002 MITSUBISHI IGBT MODULES CM200E3U-24F HIGH POWER SWITCHING USE REVERSE RECOVERY CHARACTERISTICS OF CLAMP DIODE (TYPICAL) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part & CLAMP DIODE part) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j-c) (C/W) 103 7 5 3 2 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: Per unit base = Rth(j-c) = 0.15C/W 5 FWDi part: Per unit base = Rth(j-c) = 0.18C/W 3 CLAMP Di part: Per unit base = Rth(j-c) = 0.18C/W 2 7 5 3 2 7 5 3 2 7 5 3 2 100 3 2 102 7 5 3 2 Irr trr Conditions: VCC = 600V VGE = 15V RG = 1.6 Tj = 25C Inductive load 2 3 5 7 102 2 3 5 7 103 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 Single Pulse TC = 25C 101 1 10 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TMIE (s) EMITTER CURRENT IE (A) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) 18 16 14 12 10 8 6 4 2 0 0 IC = 200A VCC = 400V VCC = 600V 500 1000 1500 2000 2500 3000 GATE CHARGE QG (nC) Mar.2002 |
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