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| CLX34 HiRel X-Band GaAs Power-MESFET * * * * * * * HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 500 MHz to 10 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 53 % Component Under Development, Package Modifications Foreseen ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D Package CLX34-00 (ql) CLX34-05 (ql) CLX34-10 (ql) - see below G MWP-25 tbc. CLX34-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 10 Draft D, September 99 CLX34 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1 Symbol VDS VDG VGS ID IG PC Values 11 13 -6 2000 10 1.5 at VDS 8 V 2.5 at VDS 7 V 3.5 at VDS 6 V Unit V V V mA mA dB Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) PC PC TJ Tstg Ptot Tsol 3.5 at VDS 6 V tbd. 175 - 65...+ 175 5.4 230 dB dB C C W C Soldering temperature 5) Thermal Resistance Junction-soldering point Notes.: Rth JS 20 K/W 1) Operation Range 1: 400 mA ID 800 mA 2) Operation Range 2: ID > 800 mA 3) Operation Range 3: ID < 400 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 10 Draft D, September 99 CLX34 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol min. Values typ. max. Unit DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 60 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Transconductance VDS = 3 V, ID = 600 mA Thermal resistance Junction to soldering point VDS = 8 V, ID = 600 mA, Ts = +25C Rth JS 16 K/W gm 660 780 mS -IGp9.5 1200 A IDp9.5 3000 A -IGp3 120 A IDp3 400 A -VGth 1.2 2.2 3.2 V IDss 900 1500 2000 mA Semiconductor Group 3 of 10 Draft D, September 99 CLX34 Electrical Characteristics (continued) Parameter Symbol min. Values typ. max. Unit AC Characteristics Linear power gain 1) VDS = 8 V, ID = 600 mA, f = 2.3 GHz, Pin = 11 dBm CLX34-00 CLX34-05 CLX34-10 Power output at 1dB gain compr. 1) Glp dB 13.5 14.0 14.0 P1dB 14.5 15.0 15.0 dBm VDS = 8 V, ID(RF off) = 600 mA, f = 2.3 GHz CLX34-00 CLX34-05 CLX34-10 Output Power 1) VDS = 8 V, ID(RF off) = 600 mA, f = 2.3 GHz, Pin = 21.0 dBm CLX34-00 CLX34-05 CLX34-10 Power added efficiency 1), 2) Pout 33.2 34.0 34.5 dBm 32.7 33.7 34.2 PAE 33.2 34.0 34.5 % VDS = 8 V, ID(RF off) = 600 mA, f = 2.3 GHz, Pin = 21.0 dBm CLX34-00 CLX34-05 CLX34-10 Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC 42 44 46 47 51 53 - Semiconductor Group 4 of 10 Draft D, September 99 CLX34 Typical Common Source S-Parameters V DS = 3 V, I D = 600 mA, Z o = 50 f [GHz] 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [magn] 0,900 0,906 0,911 0,914 0,916 0,918 0,919 0,919 0,919 0,919 0,919 0,919 0,918 0,918 0,917 0,916 0,916 0,916 0,916 0,916 0,916 0,916 0,916 0,915 0,914 0,913 0,912 0,911 0,909 0,908 0,907 0,906 0,905 0,905 0,905 0,904 0,900 0,893 0,883 0,871 0,856 0,839 0,817 0,789 0,758 0,724 0,699 0,682 0,668 Semiconductor Group 5 of 10 Draft D, September 99 CLX34 Typical Common Source S-Parameters (continued) V DS = 5 V, I D = 600 mA, Z o = 50 f [GHz] 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,879 0,890 0,898 0,906 0,910 0,912 0,912 0,912 0,912 0,912 0,912 0,911 0,912 0,911 0,911 0,911 0,911 0,910 0,911 0,911 0,910 0,911 0,910 0,911 0,910 0,910 0,910 0,909 0,909 0,909 0,909 0,909 0,908 0,908 0,907 0,906 0,903 0,897 0,887 0,876 0,862 0,846 0,826 0,800 0,773 0,743 0,722 0,708 0,698 Semiconductor Group 6 of 10 Draft D, September 99 CLX34 Typical Common Source S-Parameters (continued) V DS = 8 V, I D = 600 mA, Z o = 50 f [GHz] 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,841 0,868 0,889 0,898 0,903 0,905 0,906 0,906 0,907 0,906 0,907 0,907 0,907 0,908 0,908 0,909 0,910 0,910 0,912 0,912 0,914 0,916 0,916 0,919 0,920 0,921 0,920 0,919 0,917 0,914 0,913 0,914 0,914 0,917 0,919 0,918 0,915 0,909 0,900 0,889 0,876 0,861 0,842 0,819 0,793 0,764 0,745 0,733 0,724 0,6 0,2 -0,3 -0,3 0,1 Semiconductor Group 7 of 10 Draft D, September 99 CLX34 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CLX34- (nn) (ql) (nn): Output Power Level (ql): Quality Level Ordering Example: Ordering Code: on request CLX34-10 ES For CLX34; Output Power Level 10 (Pout>34.2 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.com/products/discrete/hirel.htm - HiRel Discrete and Microwave Semiconductors www.infineon.com/products/discrete/hirel.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: ++89 234 24480 ++89 234 28438 martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 8 of 10 Draft D, September 99 CLX34 MWP-25 Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. 1 2 3 The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 9 of 10 Draft D, September 99 |
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