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| CLX32 HiRel X-Band GaAs Power-MESFET * * * * * * * HiRel Discrete and Microwave Semiconductor For professional power amplifiers For frequencies from 500 MHz to 12.5 GHz Hermetically sealed microwave power package Low thermal resistance for high voltage application Power added efficiency > 54 % Component Under Development, Package Modifications Foreseen ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D Package CLX32-00 (ql) CLX32-05 (ql) CLX32-10 (ql) - see below G MWP-25 tbc. CLX32-nn: specifies output power level (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: on request on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 10 Draft D, September 99 CLX32 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Gate forward current Compression Level 1) Operation Range 1 Symbol VDS VDG VGS ID IG PC Values 11 13 -6 1400 10 1.5 at VDS 8 V 2.5 at VDS 7 V 3.5 at VDS 6 V Unit V V V mA mA dB Compression Level 2) Operation Range 2 Compression Level 3) Operation Range 3 Junction temperature Storage temperature range Total power dissipation 4) Soldering temperature Thermal Resistance Junction-soldering point Notes.: 5) PC PC TJ Tstg Ptot Tsol 3.5 at VDS 6 V tbd. 175 - 65...+ 175 5.4 230 dB dB C C W C Rth JS 25 K/W 1) Operation Range 1: 270 mA ID 540 mA 2) Operation Range 2: ID > 540 mA 3) Operation Range 3: ID < 270 mA 4) At TS = + 40 C. For TS > + 40 C derating is required. 5) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed. Semiconductor Group 2 of 10 Draft D, September 99 CLX32 Electrical Characteristics (at TA=25C; unless otherwise specified) Parameter Symbol min. Values typ. max. Unit DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 40 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Gate current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V Drain current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Gate current at pinch-off, high VDS VDS = 9.5 V, VGS = -3.5 V Transconductance VDS = 3 V, ID = 400 mA Thermal resistance Junction to soldering point VDS = 8 V, ID = 400 mA, Ts = +25C Rth JS 20 K/W gm 440 520 mS -IGp9.5 800 A IDp9.5 2000 A -IGp3 80 A IDp3 200 A -VGth 1.2 2.2 3.2 V IDss 600 1000 1400 mA Semiconductor Group 3 of 10 Draft D, September 99 CLX32 Electrical Characteristics (continued) Parameter Symbol min. Values typ. max. Unit AC Characteristics Linear power gain 1) VDS = 8 V, ID = 400 mA, f = 2.3 GHz, Pin = 8 dBm CLX32-00 CLX32-05 CLX32-10 Power output at 1dB gain compr. 1) Glp dB 15.0 15.5 15.5 P1dB 16.0 16.5 16.5 dBm VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz CLX32-00 CLX32-05 CLX32-10 Output Power 1) VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz, Pin = 18.0 dBm CLX32-00 CLX32-05 CLX32-10 Power added efficiency 1), 2) Pout 31.5 32.3 32.8 dBm 31.0 32.0 32.5 PAE 31.5 32.3 32.8 % VDS = 8 V, ID(RF off) = 400 mA, f = 2.3 GHz, Pin = 18.0 dBm CLX32-00 CLX32-05 CLX32-10 Notes.: 1) RF Power characteristics given for power matching conditions 2) Power added efficiency: PAE = (PRFout - PRFin) / PDC 43 46 48 48 52 54 - Semiconductor Group 4 of 10 Draft D, September 99 CLX32 Typical Common Source S-Parameters V DS = 3 V, I D = 400 mA, Z o = 50 f [GHz] 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [magn] 0,855 0,870 0,884 0,893 0,898 0,901 0,903 0,905 0,905 0,905 0,905 0,905 0,903 0,903 0,902 0,901 0,900 0,899 0,899 0,898 0,898 0,898 0,897 0,895 0,894 0,892 0,890 0,887 0,886 0,885 0,884 0,883 0,883 0,883 0,883 0,882 0,879 0,873 0,865 0,854 0,843 0,830 0,813 0,797 0,778 0,755 0,741 0,732 0,726 Semiconductor Group 5 of 10 Draft D, September 99 CLX32 Typical Common Source S-Parameters (continued) V DS = 5 V, I D = 400 mA, Z o = 50 f [GHz] 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,830 0,856 0,877 0,887 0,892 0,894 0,896 0,897 0,897 0,897 0,897 0,897 0,897 0,896 0,896 0,896 0,896 0,896 0,897 0,897 0,897 0,897 0,896 0,897 0,897 0,896 0,895 0,893 0,890 0,888 0,888 0,888 0,890 0,891 0,892 0,891 0,889 0,884 0,876 0,867 0,857 0,846 0,830 0,816 0,799 0,785 0,772 0,761 0,752 3,1 2,8 2,7 Semiconductor Group 6 of 10 Draft D, September 99 CLX32 Typical Common Source S-Parameters (continued) V DS = 8 V, I D = 400 mA, Z o = 50 f [GHz] 0,6 0,8 1,0 1,2 1,4 1,6 1,8 2,0 2,2 2,4 2,6 2,8 3,0 3,2 3,4 3,6 3,8 4,0 4,2 4,4 4,6 4,8 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [mag] 0,812 0,844 0,868 0,881 0,888 0,892 0,895 0,896 0,897 0,897 0,897 0,897 0,897 0,897 0,897 0,898 0,899 0,900 0,901 0,903 0,904 0,905 0,907 0,910 0,911 0,911 0,911 0,909 0,908 0,906 0,906 0,906 0,907 0,908 0,909 0,909 0,908 0,904 0,897 0,889 0,880 0,870 0,857 0,844 0,828 0,814 0,802 0,793 0,787 Semiconductor Group 7 of 10 Draft D, September 99 CLX32 Order Instructions: Full type variant including quality level must be specified by the orderer. For HiRel Discrete and Microwave Semiconductors the ordering code specifies device family and quality level only. Ordering Form: Ordering Code: Q.......... CLX32- (nn) (ql) (nn): Output Power Level (ql): Quality Level Ordering Example: Ordering Code: on request CLX32-10 ES For CLX32; Output Power Level 10 (Pout>32.5 dBm) in ESA Space Quality Level Further Informations: See our WWW-Pages: - Discrete and RF-Semiconductors (Small Signal Semiconductors) www.infineon.de/semiconductor/products/35/35.htm - HiRel Discrete and Microwave Semiconductors www.infineon.de/semiconductor/products/35/353.htm Please contact also our marketing division : Tel.: Fax.: e-mail: Address: ++89 234 24480 ++89 234 28438 martin.wimmers@infineon.com Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich Semiconductor Group 8 of 10 Draft D, September 99 CLX32 MWP-25 Package Published by Infineon Technologies Semiconductors, High Frequency Products Marketing, P.O.Box 801709, D-81617 Munich. Infineon Technologies AG 1998. All Rights Reserved. As far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assemblies. 1 2 3 The information describes the type of component and shall not be considered as assured characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Offices of Semiconductor Group in Germany or the Infineon Technologies Companies and Representatives woldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the type in question please contact your nearest Infineon Technologies Office, Semiconductor Group. Infineon Technologies Semiconductors is a certified CECC and QS9000 manufacturer (this includes ISO 9000). Semiconductor Group 9 of 10 Draft D, September 99 |
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