 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CHA2296 9- 19GHz Buffer Splitter Amplifier GaAs Monolithic Microwave IC Description The CHA2296 is a broadband buffer splitter three-stage monolithic amplifier. It is designed for a wide range of applications, from military to commercial communication systems. The backside of the chip is both RF and DC grounds. This helps simplify the assembly process. IN OUT 1 Vd Vg The circuit is manufactured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Typical on wafer measurements : Gain (dB) OUT 2 Main Features Broadband performance : 9-19GHz 14dBm saturated output power. 16dB 1.5dB gain Very good broadband matching Low DC power consumption, 190mA @ 3.5V Chip size : 2.26 X 1.33 X 0.10 mm 20 19 18 17 16 15 14 13 12 11 10 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) Gain channel 1 Gain channel 2 Main Characteristics Tamb. = 25C Symbol Fop G Psat Id_small signal Parameter Operating frequency range Small signal gain Saturated Output power Bias current Min 9 13 12 Typ 16 14 190 Max 19 Unit GHz dB dBm 250 mA ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. :DSCHA22962044 13-Feb.-02 1/7 Specifications subject to change without notice United Monolithic Semiconductors S.A.S. Route Departementale 128 - B.P.46 - 91401 Orsay Cedex France Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2296 9-19GHz Buffer Splitter Amplifier Electrical Characteristics for Broadband Operation Tamb = +25C, Vd = 3.5V Vg tuned for Id=190mA Symbol Fop G G Is Ic Psat VSWRin VSWRout Parameter Operating frequency range (1) Small signal gain (1) Small signal gain flatness (1) Reverse isolation (1) Isolation between channels (1) Saturated output power (1) Input VSWR (1) Output VSWR (1) Min 9 13 Typ Max 19 Unit GHz dB dB dB dB dBm 16 1.5 60 20 12 14 2.0:1 2.0:1 190 250 Id_small signal Bias current mA (1) These values are representative for on-wafer measurements that are made without bonding wires at the RF ports. Absolute Maximum Ratings Tamb. = 25C (1) Symbol Vds Ids Vgs Vdg Pin Ta Tstg Parameter Drain bias voltage_small signal Drain bias current_small signal Gate bias voltage Negative Drain Gate voltage (= Vds - Vgs) Maximum peak input power overdrive (2) Operating temperature range Storage temperature range Values 4.0 300 -2 to +0.4 +5 +15 -40 to +85 -55 to +155 Unit V mA V V dBm C C (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHA22962044 13-Feb.-02 2/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 9-19GHz Power splitter Amplifier CHA2296 Typical Scattering Parameters ( On wafer Sij measurements ) Bias Conditions : Channel Freq. GHz 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Vd = 3.5 Volt, Vg tuned for Id = 190 mA. S11 dB -12.34 -15.29 -17.46 -17.44 -16.63 -16.30 -16.41 -16.72 -17.15 -17.10 -16.93 -16.76 -16.59 -16.80 -18.71 -21.72 -22.50 -18.17 -12.32 -15.27 -17.46 -17.39 -16.63 -16.25 -16.37 -16.71 -17.09 -17.11 -16.84 -16.78 -16.51 -16.82 -18.61 -21.50 -22.46 -18.06 S11 / -94.87 -102.89 -97.03 -90.47 -91.57 -97.50 -103.81 -107.46 -111.72 -110.94 -113.66 -116.42 -121.64 -129.92 -137.93 -133.29 -91.29 -73.84 -94.79 -102.90 -97.18 -90.48 -91.64 -97.89 -103.76 -107.93 -111.39 -110.96 -113.34 -116.77 -121.60 -129.65 -138.19 -132.84 -92.59 -74.29 S12 dB -66.94 -67.83 -66.67 -66.06 -67.50 -67.33 -65.23 -69.95 -66.02 -97.44 -70.70 -63.72 -70.22 -64.92 -66.62 -57.46 -60.06 -66.35 -67.52 -69.76 -66.21 -66.67 -66.58 -67.04 -64.61 -65.01 -64.06 -65.31 -64.26 -61.83 -72.17 -69.62 -64.20 -60.17 -60.24 -58.18 S12 / -38.90 -87.89 -87.44 -140.51 -123.38 175.31 -177.40 145.63 138.93 -155.97 166.71 170.65 97.77 154.63 -138.40 176.38 117.94 142.93 -31.29 -103.63 -90.60 -140.90 -140.49 -155.99 175.45 -171.47 151.41 142.93 156.24 107.47 144.18 130.95 168.06 135.42 126.24 126.19 S21 dB -2.14 5.84 11.51 14.82 16.36 16.98 17.05 17.17 16.99 16.72 16.76 16.59 16.29 16.01 15.67 15.02 14.10 13.15 -4.49 3.64 9.59 13.21 14.89 15.65 15.85 15.97 16.15 15.95 15.97 15.84 15.65 15.55 15.28 14.89 13.93 13.10 S21 / 41.09 -11.01 -68.31 -125.78 -177.87 136.79 97.30 61.74 27.77 -3.82 -32.72 -63.33 -92.58 -122.60 -151.31 177.95 148.71 119.32 37.49 -10.20 -65.41 -121.94 -173.34 141.31 102.63 67.05 32.89 1.43 -28.92 -58.97 -87.83 -117.21 -147.64 -178.56 151.11 121.08 S22 dB -2.04 -3.64 -5.95 -8.74 -11.67 -15.00 -18.81 -23.94 -29.04 -31.35 -28.61 -22.22 -21.30 -19.35 -18.99 -17.24 -17.98 -17.05 -2.04 -3.61 -5.86 -8.59 -11.49 -14.45 -18.12 -22.97 -30.44 -34.60 -27.80 -24.72 -22.65 -20.65 -19.63 -18.58 -17.39 -16.21 S22 / -88.40 -108.79 -127.83 -143.37 -156.13 -167.18 -176.53 178.88 -146.27 -89.10 -91.76 -116.88 -125.33 -140.70 -154.19 -168.27 178.00 169.87 -88.02 -108.12 -127.23 -142.92 -155.45 -167.89 -179.43 170.53 174.52 -115.92 -89.11 -105.11 -112.92 -126.05 -138.57 -153.24 -164.66 -176.47 Ref. : DSCHA22962044 13-Feb.-02 3/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2296 Typical On wafer Measurements Bias Conditions : 9-19GHz Buffer Splitter Amplifier Vd = 3.5 Volt, Vg tuned for Id = 190 mA. Gain for each channel versus frequency (dB) 20 19 18 17 16 15 14 13 12 11 10 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) Gain channel 1 Gain channel 2 Isolation between channels versus frequency (dB) 25 24 23 22 21 20 19 18 17 16 15 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) Ref. : DSCHA22962044 13-Feb.-02 4/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 9-19GHz Power splitter Amplifier CHA2296 Gain & Return Loss channel 1 versus frequency (dB) 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) S21 S11 S22 Gain & Return Loss channel 2 versus frequency (dB) 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 Frequency (GHz) S21 S11 S22 Ref. : DSCHA22962044 13-Feb.-02 5/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 CHA2296 9-19GHz Buffer Splitter Amplifier Chip Assembly and Mechanical Data RF Out 1 To Vd DC Drain supply feed 120pF RF In 120pF RF Out 2 To Vg DC Gate supply feed Note : Supply feed should be capacitively bypassed. 25m diameter gold wire is recommended. Bonding pad positions. ( Chip thickness : 100m. DC pads : 100*100 m. All dimensions are in micrometers ) Ref. : DSCHA22962044 13-Feb.-02 6/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 9-19GHz Power splitter Amplifier CHA2296 Ordering Information Chip form : CHA2296-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHA22962044 13-Feb.-02 7/7 Specifications subject to change without notice Route Departementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 |
Price & Availability of CHA2296-99F00
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |