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| GaAs MMIC CGY 195 _________________________________________________________________________________________________________ Tentative Data l l l l l Power amplifier for DECT application, single voltage supply Operating voltage range: 2.7 to 6 V Pout = 26dBm at Vd=3.3V Overall power added efficiency 44 % RF_out / VD2 4 GND 5 3 2 VD1 ESD: Electrostatic discharge sensitive device, observe handling precautions! 1 RF-in GND VPW05980 Type Marking Ordering code (taped) Package 1) CGY 195 t.b.d. t.b.d. MW 5 Maximum ratings Characteristics Positive supply voltage Supply current Maximum input power Channel temperature Storage temperature Total power dissipation (Ts < 81 C) Ts: Temperature at soldering point Symbol VD max. Value 8 t.b.d. t.b.d. 150 -55...+150 t.b.d. Unit V A dBm C C W ID Pinmax TCh Tstg Ptot PPulse Pulse peak power Thermal Resistance Channel-soldering point 1) Plastic body identical to MW-6 t.b.d. W RthChS t.b.d. K/W Siemens Aktiengesellschaft pg. 1/3 27.01.97 HL EH PD 21 GaAs MMIC Electrical characteristics CGY 195 _________________________________________________________________________________________________________ (TA = 25C , f=1.89 GHz, ZS=ZL=50 Ohm, , unless otherwise specified) Characteristics Supply current VD=3.3V; Pin = +3 dBm Symbol min - typ 270 26 26 28 42 max - Unit mA dB dBm dBm % IDD G Po Po PAE Gain VD=3.3V; Pin = -10 dBm Output Power VD=3.3V; Pin = 3 dBm Output Power VD=4.8V; Pin = 5 dBm Overall Power added Efficiency VD=3.3V; Pin = 3 dBm Output power and power added efficiency pulsed mode: T=577s, duty cycle 12.5% CGY 195 30 25 20 15 10 5 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 7 8 Pin/dB m Pout [dBm] PAE [%] 50 45 40 35 30 25 20 15 10 5 0 Siemens Aktiengesellschaft pg. 2/3 27.01.97 HL EH PD 21 GaAs MMIC CGY 195 _________________________________________________________________________________________________________ Functional Block Diagram (3) VD1 (1) RFin (4) RFout / VD2 (2,5,6) GND (2,5,6) GND Pin # 1 2 3 4 5 6 RFin GND VD1 Configuration RF input power RF and DC ground Pos. drain voltage of the 1st stage RFout/VD2 RF output power / Pos. drain voltage of the 2nd stage GND GND RF and DC ground RF and DC ground Siemens Aktiengesellschaft pg. 3/3 27.01.97 HL EH PD 21 |
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