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| SBD T y p e : C10T03QL OUTLINE DRAWING FEATURES *SQUARE-PAK TO-263AB(SMD) Packaged in 24mm Tape and Reel *Dual Diodes - Cathode Common *Low Forward Voltage Drop *High Surge Capability *Tj=150 C operation Maximum Ratings Rating Repetitive Peak Reverse Voltage Repetitive Peak Surge Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Approx Net Weight: 1.4g Symbol VRRM VRRSM IO IF(RMS) IFSM Tjw Tstg C10T03QL 30 35(pulse width 1s duty 1/50) 50 Hz Full Sine Wave 10 Tc=116C Resistive Load 11.1 50Hz Full Sine Wave ,1cycle 120 Non-repetitive -40 to +150 -40 to +150 Unit V V A A A C C Electrical * Thermal Characteristics Characteristics Peak Reverse Current Peak Forward Voltage Thermal Resistance Symbol IRM VFM Conditions Tj= 25C, VRM= VRRM per arm Tj= 25C, IFM= 5 A per arm Min. Typ. Max. 5 0.47 3 Unit mA V C /W Rth(j-c) Junction to Case C_T_ OUTLINE DRAWING (Dimensions in mm) FORWARD CURRENT VS. VOLTAGE C10T03QL/C10T03QL-11A (per Arm) 20 INSTANTANEOUS FORWARD CURRENT (A) 10 5 2 Tj=25C Tj=150C 1 0.5 0 0.2 0.4 0.6 0.8 INSTANTANEOUS FORWARD VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD POWER DISSIPATION C10T03QL/C10T03QL-11A (Total) RECT 180 6 AVERAGE FORWARD POWER DISSIPATION (W) 5 SINE WAVE 4 3 2 1 0 0 2 4 6 8 10 12 AVERAGE FORWARD CURRENT (A) PEAK REVERSE CURRENT VS. PEAK REVERSE VOLTAGE Tj= 150 C 500 C10T03QL/C10T03QL-11A (per Arm) PEAK REVERSE CURRENT (mA) 200 100 50 0 5 10 15 20 25 30 35 PEAK REVERSE VOLTAGE (V) AVERAGE REVERSE POWER DISSIPATION C10T03QL/C10T03QL-11A (Total) RECT 180 12 AVERAGE REVERSE POWER DISSIPATION (W) 10 8 SINE WAVE 6 4 2 0 0 5 10 15 20 25 30 35 REVERSE VOLTAGE (V) 0 180 CONDUCTION ANGLE AVERAGE FORWARD CURRENT VS. CASE TEMPERATURE V RM =30 V C10T03QL/C10T03QL-11A (Total) RECT 180. 12 AVERAGE FORWARD CURRENT (A) 10 SINE WAVE. 8 6 4 2 0 0 25 50 75 100 125 150 CASE TEMPERATURE (C) SURGE CURRENT RATINGS f=50Hz,Sine Wave,Non-Repetitive,No Load 140 C10T03QL/C10T03QL-11A 120 SURGE FORWARD CURRENT (A) 100 80 60 40 I FSM 0.02s 20 0 0.02 0.05 0.1 0.2 0.5 1 2 TIME (s) JUNCTION CAPACITANCE VS. REVERSE VOLTAGE Tj=2 5 C,V m = 20m V RM S ,f= 100 kHz ,Ty pica l V alue C10T03QL/C10T03QL-11A (per Arm) 2000 JUNCTION CAPACITANCE (pF) 1000 500 200 100 0.5 1 2 5 10 20 50 REVERSE VOLTAGE (V) |
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