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| (R) BUV61 HIGH POWER NPN SILICON TRANSISTOR s s s s NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED FULLY CHARACTERIZED AT 125oC APPLICATION s SWITCHING REGULATORS s MOTOR CONTROL DESCRIPTION The BUV61 is a Multi-Epitaxial planar NPN transistor in TO-3 metal case. It is intented for use in high frequency and efficiency converters such us motor controllers and industrial equipment. 1 2 TO-3 (version " S ") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CEV V CEO V EBO IC I CM IB I BM P Base P tot T stg Tj Parameter Collector-emitter Voltage (V BE = -1.5V) Collector-emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Base Peak Current Reverse Bias Base Dissipation (B.E. junction in avalanche) Total Power Dissipation at T case < 25 o C Storage Temperature Max Operating Junction Temperature Value 300 200 7 50 75 8 15 2 250 -65 to 200 200 Unit V V V A A A A W W o o C C October 2003 1/5 BUV61 THERMAL DATA R thj-case Thermal Resistance Junction-case Max 0.7 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CER I CEV Parameter Collector Cut-off Current (R BE = 10) Collector Cut-off Current (V BE = -1.5V) Emitter Cut-off Current (I C = 0) Test Conditions V CE = 300 V V CE = 300 V V CE = 300V V CE = 300V V EB = 5 V I C = 0.2A L = 25 mH 200 T C = 100 o C T C =100 o C Min. Typ. Max. 1 5 1 4 1 Unit mA mA mA mA mA V I EBO V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat) Emitter-base Voltage (I C = 0) Collector-Emitter Saturation Voltage I E = 50 mA IC IC IC IC IC IC IC IC IC IC = = = = = = = = = = 12.5A 25A 40A 12.5A 25A 40A 25A 40A 25A 40A IB IB IB IB IB IB IB IB IB IB = = = = = = = = = = 0.625A 2.5A 5A 0.625A T j = 100 o C 2.5A T j = 100 o C o 5A T j = 100 C 2.5A 5A 2.5A 5A 7 0.65 0.4 0.6 0.5 0.5 0.75 1.05 1.35 1.1 1.35 70 60 I B1 =2.5A 1.3 1.8 I B1 =2.5A 0.95 1.1 2 3 3 5 130 110 0.9 0.9 1.2 1.2 1.5 1.9 1.4 1.8 1.7 1.8 V V V V V V V V V V A/s A/s V V V V V BE(sat) Base-Emitter Saturation Voltage T j = 100 o C T j = 100 o C I B1 =3.75A dic /dt Rated of Rise of on-state Collector Current Collector Emitter Dynamic Voltage Collector Emitter Dynamic Voltage V CC = 160V R C = 0 T j = 25 o C T j = 100 o C V CC = 160V R C = 6.4 T j = 25 o C T j = 100 o C V CC = 160V R C = 6.4 T j = 25 o C T j = 100 o C V CE(2s) V CE(4s) Pulsed: Pulse duration = 300 s, duty cycle = 2 % 2/5 BUV61 ELECTRICAL CHARACTERISTICS (continued) Symbol tr ts tf ts tf tt tc ts tf tt tc ts tf tt ts tf tt Parameter RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Tail Time in Turn-on Crossover Time Storage Time Fall Time Tail Time in Turn-on Crossover Time Storage Time Fall Time Tail Time in Turn-on Storage Time Fall Time Tail Time in Turn-on Test Conditions V CC = 160V V BB = -5V R B2 = 0.5 V CC = 160V I C = 25A V BB = -5V L C = 0.32mH V CC = 160V I C = 25A V BB = -5V L C = 0.32mH V CC = 160V I C = 25A V BB = 0 L C = 0.32mH V CC = 160V I C = 25A V BB = 0 L C = 0.32mH I C = 40A I B1 = 5A T p = 30s V clamp = 200V I B = 2.5A R B2 = 1 V clamp = 200V I B = 2.5A R B2 = 1 T j = 100 o C V clamp = 200V I B = 2.5A R B2 = 2.7 V clamp = 200V I B = 2.5A R B2 = 2.7 T j = 100 o C Min. Typ. 0.55 0.6 0.07 0.85 0.06 0.01 0.11 1.1 0.08 0.02 0.15 1.6 0.7 0.2 2.7 1 0.3 Max. 0.7 1.2 0.3 1.9 0.15 0.07 0.3 2.4 0.25 0.15 0.5 Unit s s s s s s s s s s s s s s s s s Pulsed: Pulse duration = 300 s, duty cycle = 2 % 3/5 BUV61 TO-3 (version S) MECHANICAL DATA mm MIN. A B C D E G N P R U V 11.00 1.47 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.60 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.058 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.063 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193 DIM. P G A D C U V O N R B P003O 4/5 E BUV61 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2003 STMicroelectronics - All Rights reserved STMicroelectronics GROUP OF COMPANIES Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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