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BUK7C08-55AITE
TrenchPLUS standard level FET
M3D323
Rev. 01 -- 19 August 2003
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology, featuring very low on-state resistance and including TrenchPLUS current sensing, and diodes for ESD and overtemperature protection. Product availability: BUK7C08-55AITE in SOT427 (D2-PAK).
1.2 Features
s Q101 compliant s ESD protection s Integrated temperature sensor s Integrated current sensor.
1.3 Applications
s Variable Valve Timing for engines s Automotive and power switching s Electrical Power Assisted Steering s Fan control.
1.4 Quick reference data
s VDS 55 V s ID 130 A s RDSon = 6.8 m (typ) s VF = 658 mV (typ) s SF = -1.54 mV/K (typ) s ID/Isense = 500 (typ).
2. Pinning information
Table 1: Pin 1 2 3 4 mb Pinning - SOT427, simplified outline and symbol Description gate (g) Isense anode (a) drain (d) mounting base; connected to drain (d) Pin 5 6 7 Description cathode (k)
d a
Simplified outline
Symbol
Kelvin source source (s)
1234567
mb
g
Front view
MBK128
MBL362
Isense
s
k Kelvin source
SOT427 (D2-PAK)
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VDS VDGR VGS ID Parameter drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 IDM Ptot IGS(CL) peak drain current total power dissipation gate-source clamping current Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 continuous tp = 5 ms; = 0.01 Visol(FET-TSD) FET to temperature sense diode isolation voltage Tstg Tj IDR IDRM EDS(AL)S storage temperature junction temperature reverse drain current (DC) peak reverse drain current non-repetitive avalanche energy Tmb = 25 C Tmb = 25 C; pulsed; tp 10 s unclamped inductive load; ID = 75 A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 C
[1] [2] [1] [2] [2]
Conditions RGS = 20 k
Min -55 -55 -
Max 55 55 20 130 75 75 522 272 10 50 100 +175 +175 130 75 522 460
Unit V V V A A A A W mA mA V C C A A A mJ
Source-drain diode
Avalanche ruggedness
Electrostatic discharge Vesd electrostatic discharge voltage, pins Human Body Model; C = 100 pF; 1,2,4,6,7 R = 1.5 k 6 kV
[1] [2]
Current is limited by power dissipation chip rating. Continuous current is limited by package.
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
2 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
120 Pder (%) 80
03na19
150 ID (A)
03no05
100
40
50
Capped at 75A due to package
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 Tj (C) 200
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 10 V
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Continuous drain current as a function of mounting base temperature.
103 ID (A)
03nh48
RDSon = VDS / ID tp = 10 s
102 100 s Capped at 75 A due to package 1 ms DC 10 10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 C; IDM single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
3 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
4. Thermal characteristics
Table 3: Symbol Rth(j-a) Rth(j-mb) Thermal characteristics Parameter thermal resistance from junction to ambient thermal resistance from junction to mounting base Conditions mounted on printed circuit board; minimum footprint Figure 4 Min Typ Max 50 0.55 Unit K/W K/W
4.1 Transient thermal impedance
1
Z th(j-mb) (K/W)
03ni29
= 0.5
10-1
0.2
0.1 0.05
10-2
0.02
P
single shot
=
tp T
tp T
t
10-3 10-6 10-5 10-4 10-3 10-2 10-1 1 tp (s) 10
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
4 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
5. Characteristics
Table 4: Characteristics Tj = 25 C unless otherwise specified. Symbol V(BR)DSS Parameter drain-source breakdown voltage Conditions ID = 0.25 mA; VGS = 0 V Tj = 25 C Tj = -55 C VGS(th) gate-source threshold voltage ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 C Tj = 175 C V(BR)GSS IGSS gate-source breakdown voltage gate-source leakage current IG = 1 mA; -55 C < Tj < +175 C VGS = 10 V; VDS = 0 V Tj = 25 C Tj = 175 C RDSon drain-source on-state resistance VGS = 10 V; ID = 50 A; Figure 7 and 8 Tj = 25 C Tj = 175 C RD(Is)on drain-Isense on-state resistance VGS = 10 V; ID = 25 mA; Figure 18 Tj = 25 C Tj = 175 C VF SF Vhys ID/Isense forward voltage temperature sense diode temperature coefficient temperature sense diode forward voltage hysteresis temperature sense diode IF = 250 A IF = 250 A; -55 C < Tj < +175 C 125 A < IF < 250 A 1.32 3.04 648 -1.4 25 450 1.55 3.57 658 -1.54 32 500 1.82 4.19 668 -1.68 50 550 mV mV/K mV 6.8 8 16 m m 22 1000 10 nA A 20 0.1 22 10 250 A A V 2 1 3 4 4.4 V V V 55 50 V V Min Typ Max Unit Static characteristics
ratio of drain current to sense VGS > 5 V; current -55 C < Tj < +175 C total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 12 VGS = 10 V; VDS = 44 V; ID = 25 A; Figure 14
Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss
9397 750 11696
-
116 19 51 4200 920 500
-
nC nC nC pF pF pF
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
5 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
Table 4: Characteristics...continued Tj = 25 C unless otherwise specified. Symbol td(on) tr td(off) tf Ld Parameter turn-on delay time rise time turn-off delay time fall time internal drain inductance measured from upper edge of drain mounting base to centre of die measured from source lead to source bond pad; lead length 6 mm IS = 40 A; VGS = 0 V; Figure 19 IS = 20 A; dIS/dt = -100 A/s VGS = -10 V; VDS = 30 V Conditions VDD = 30 V; RL = 1.2 ; VGS = 10 V; RG = 10 Min Typ 35 115 155 110 2.5 Max Unit nS nS nS nS nH
Ls
internal source inductance
-
7.5
-
nH
Source-drain diode VSD trr Qr source-drain (diode forward) voltage reverse recovery time recovered charge 0.85 80 200 1.2 V ns nC
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
6 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
400 ID (A) 300 20 10 9 8
03nn97
14 RDSon (m) 12
03nn99
Label is VGS (V) 7.5 7
10
200
6.5 6 5.5 5 4.5 4 6 8
100
0 0 2 4 6 8 10 VDS (V)
4 4 8 12 16 V 20 GS (V)
Tj = 25 C; tp = 300 s
Tj = 25 C; ID = 50 A
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Drain-source on-state resistance as a function of gate-source voltage; typical values.
20 RDSon (m) 16 5.5 6 6.5 7 7.5 8
03nn98
2 a 1.5
03ne89
Label is VGS (V)
12
1
10 8 20 0.5
4 0 100 200 300 I (A) 400 D
0 -60 0 60 120 Tj (C) 180
Tj = 25 C; tp = 300 s
R DSon a = ---------------------------R DSon ( 25 C ) Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
7 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60 0 60 120 Tj (C) 180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C; VDS = VGS
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
80 g fs (S) 60
03no00
8000 C (pF) 6000 C iss
03ni69
40
4000
Crss
Coss
20
2000
0 0 25 50 75 I (A) 100 D
0 10-2 10-1 1 10 V 102 DS (V)
Tj = 25 C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
8 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
100 ID (A) 75
03no01
10 VGS (V) 8 VDS = 14 V 6
03nf25
50 175 C 25 Tj = 25 C 0 0 2 4 6 VGS (V) 8
0 0 40 4
VDS = 44 V
2
80
QG (nC)
120
VDS = 25 V
Tj = 25 C; ID = 25 A
Fig 13. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
Fig 14. Gate-source voltage as a function of gate charge; typical values.
700 VF (mV)
03ne84
1.70 -SF (mV/K) 1.65
03ne85
max
600
1.60
1.55
typ
500
1.50
1.45
min
400 0 50 100 150 Tj (C) 200
1.40 645 650 655 660 665 670 675 VF (mV)
IF = 250 A
VF at Tj = 25 C; IF = 250 A
Fig 15. Forward voltage of temperature sense diode as a function of junction temperature; typical values.
Fig 16. Temperature coefficient of temperature sense diode as a function of forward voltage; typical values.
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
9 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
600 ID/Isense 550
03no04
8 RD(Is)on (m) 6
03no03
500
4
450
2
400 4 8 12 16 V 20 GS (V)
0 4 8 12 16 VGS (V) 20
ID = 25 A
Isense = 25 mA
Fig 17. Drain-sense current ratio as a function of gate voltage; typical values.
Fig 18. RD(Is)on as function of gate-source voltage; typical values.
100 ID (A) 75
03no02
50 175 C 25 Tj = 25 C
0 0 0.5 1 VSD (V) 1.5
VGS = 0 V
Fig 19. Reverse diode current as a function of reverse diode voltage; typical values.
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
10 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
6. Package outline
Plastic single-ended surface mounted package (Philips version of D2-PAK); 7 leads (one lead cropped) SOT427
A E A1
D1 mounting base
D
HD
4
Lp
1
7
b e e e e e e
c Q
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 1.27 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT427
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-06-25 01-04-18
Fig 20. SOT427 (D2-PAK).
9397 750 11696 (c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
11 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
7. Soldering
handbook, full pagewidth
10.85 10.60 10.50 1.50 7.50 7.40 1.70
2.25 2.15
8.15
8.35
8.275 1.50
4.60
0.30 4.85
5.40 8.075
7.95
3.00
0.20
solder lands solder resist occupied area solder paste
1.27 (4x)
2.54 8.92
0.70 0.80
MSD059
Dimensions in mm.
Fig 21. Reflow soldering footprint for SOT427.
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
12 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
8. Revision history
Table 5: Rev Date 01 20030819 Revision history CPCN Description Product data; initial version (9397 750 11696)
9397 750 11696
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
13 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
9. Data sheet status
Level I II Data sheet status[1] Objective data Preliminary data Product status[2][3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
III
Product data
Production
[1] [2] [3]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
10. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
12. Trademarks
TrenchMOS -- is a trademark of Koninklijke Philips Electronics N.V.
11. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 11696
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Product data
Rev. 01 -- 19 August 2003
14 of 15
Philips Semiconductors
BUK7C08-55AITE
TrenchPLUS standard level FET
Contents
1 1.1 1.2 1.3 1.4 2 3 4 4.1 5 6 7 8 9 10 11 12 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 14 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
(c) Koninklijke Philips Electronics N.V. 2003. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 19 August 2003 Document order number: 9397 750 11696

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