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BUF742
Silicon NPN High Voltage Switching Transistor
Features
D D D D D D D D D
Simple-sWitch-Off Transistor (SWOT) HIGH SPEED technology Planar passivation 100 kHz switching rate Very low switching losses Very low dynamic saturation Very low operating temperature Optimized RBSOA High reverse voltage
14283
Applications
Electronic lamp ballast circuits Switch-mode power supplies
Absolute Maximum Ratings
Tcase = 25C, unless otherwise specified Parameter Collector-emitter voltage g Test Conditions Symbol VCEO VCEW VCES VEBO IC ICM IB IBM Ptot Tj Tstg Value 400 550 900 11 5 7.5 2.5 4 50 150 -65 to +150 Unit V V V V A A A A W C C
Emitter-base voltage Collector current Collector peak current Base current Base peak current Total power dissipation Junction temperature Storage temperature range
Tcase 25C
Maximum Thermal Resistance
Tcase = 25C, unless otherwise specified Parameter Junction case Test Conditions Symbol RthJC Value 2.5 Unit K/W
TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97
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BUF742
Electrical Characteristics
Tcase = 25C, unless otherwise specified Parameter Collector cut-off current Collector-emitter breakdown voltage (figure 1) Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage g DC forward current transfer ratio Test Conditions VCE = 900 V VCE = 900 V; Tcase = 150C IC = 500 mA; L = 125 mH; Imeasure = 100 mA IE = 1 mA IC = 0.8 A; IB = 0.2 A IC = 2.5 A; IB = 0.8 A IC = 0.8 A; IB = 0.2 A IC = 2.5 A; IB = 0.8 A VCE = 2 V; IC = 10 mA VCE = 2 V; IC = 0.8 A VCE = 2 V; IC = 2.5 A VCE = 2 V; IC = 5 A VS = 50 V; L = 1 mH; IC = 2.5 A; IB1 = 0.5 A; -IB2 = 0.5 A; -VBE(off) = 5 V IC = 2.5 A; IB = 0.5 A; t = 1 ms IC = 2.5 A; IB = 0.5 A; t = 3 ms IC = 200 mA; VCE = 10 V; f = 1 MHz Symbol ICES ICES V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat hFE hFE hFE hFE VCEW Min Typ Max 10 200 Unit
mA mA
V V V V V V
400 11 0.2 0.4 1 1.2 15 15 7 4 500
Collector-emitter working voltage
V
Dynamic saturation voltage y g Gain bandwidth product
VCEsatdyn VCEsatdyn fT
7 1.5 4
12 3
V V MHz
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TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97
BUF742
Switching Characteristics
Tcase = 25C, unless otherwise specified Parameter Test Conditions Resistive load (figure 2) Turn on time IC = 0.8 A; IB = 0.2 A; -IB2 = 0.4 A; ; ; ; VS = 250 V Storage time Fall time Turn on time IC = 2.5 A; IB1 = 0.5 A; -IB2 = 1.3 A; ; ; ; VS = 250 V Storage time Fall time Inductive load (figure 3) Storage time IC = 0.8 A; IB = 0.2 A; -IB2 = 0.4 A; ; ; ; Vclamp = 300 V; L = 200 mH Fall time Storage time IC = 2.5 A; IB1 = 0.5 A; -IB2 = 1.3 A; ; ; ; Vclamp = 300 V; L = 200 mH Fall time Symbol ton ts tf ton ts tf ts tf ts tf Min Typ 0.1 1.5 0.2 0.3 1 0.1 1.5 0.15 1 0.05 Max 0.2 2 0.3 0.4 1.3 0.15 2 0.2 1.3 0.1 Unit
ms ms ms ms ms ms ms ms ms ms
94 8863
V S2
+ 10 V
IB
IC
w
Imeasure IC 5 IC
V S1 + 0 to 30 V V(BR)CEO tp T tp 3 Pulses
+
LC VCE V(BR)CEO 100 mW
+ 0.1 + 10 ms
I(BR)R
Figure 1. Test circuit for V(BR)CE0
TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97
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BUF742
94 8852
IB IB1 0 t RC -IB2
IC (1) IB1 RB VBB +
VCE IB
VCC
IC 0.9 IC
0.1 IC tr td ton t ts toff tf
(1) Fast electronic switch
Figure 2. Test circuit for switching characteristics - resistive load
94 8853
IB IB1 LC 0 -IB2 IC (1) IB1 RB VBB IB VCE Vclamp (2) IC VCC 0.9 IC
t
+
(1) Fast electronic switch (2) Fast recovery rectifier
0.1 IC t ts tr
Figure 3. Test circuit for switching characteristics - inductive load
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TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97
BUF742
Typical Characteristics (Tcase = 25_C unless otherwise specified)
6 I C - Collector Current ( A ) 5 4 3 2 1 0 0
13706
100.00 Ptot - Total Power Dissipation ( W ) 2.5K/W 10.00 12.5K/W
0.1 x IC < IB2 < 0.5 x IC VCEsat < 2 V
1.00 25K/W 50K/W 0.10 RthJA=85K/W 0.01
100
200
300
400
500
600
13707
0
25
50
75
100
125
150
VCE - Collector Emitter Voltage ( V )
Tcase - Case Temperature ( C )
Figure 4. VCEW - Diagram
5.0 4.5 IC - Collector Current ( A ) 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
13708
Figure 7. Ptot vs.Tcase
V CEsat - Collector Emitter Saturation Voltage ( V ) 10.00
0.6A 0.5A 0.4A 0.3A 0.2A
1.00 5A 3A 0.10 IC=0.5A 2A 1A
IB=0.1A
1
2
3
4
5
6
7
8
9 10 11
0.01 0.01
0.10
1.00
10.00
VCE - Collector Emitter Voltage ( V )
13709
IB - Base Current ( A )
Figure 5. IC vs. VCE
100 100
Figure 8. VCEsat vs. IB
h FE - Forward DC Current Transfer Ratio
h FE - Forward DC Current Transfer Ratio
Tj = 125C
10V 10 5V VCE=2V
75C 25C 10
VCE=2V 1 0.01 0.10 1.00 10.00
1 0.01
0.10
1.00
10.00
13711
13710
IC - Collector Current ( A )
IC - Collector Current ( A )
Figure 6. hFE vs. IC
Figure 9. hFE vs. IC
TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97
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BUF742
10 8 t s - Storage Time ( m s ) 6 4 Tcase = 125C 2 0 0
13712
0.5 saturated switching R-load IC = 0.8A, IB1 = 0.1A 0.4 t f - Fall Time ( ms ) 0.3 Tcase = 125C 0.2 0.1 Tcase = 25C 1 2 3 -IB2/IB1 4 5 6
13713
saturated switching R-load IC = 0.8A, IB1 = 0.1A
Tcase = 25C 0 0 1 2 3 -IB2/IB1 4 5 6
Figure 10. ts vs. -IB2/IB1
10 8 t s - Storage Time ( m s ) 6 4 Tcase = 125C 2 Tcase = 25C 0 0
13714
Figure 12. tf vs. -IB2/IB1
0.6
t f - Fall Time ( ms )
saturated switching R-load IC = 0.8A, IB1 = 0.2A
0.5 0.4 0.3 0.2 0.1 0
saturated switching R-load IC = 0.8A, IB1 = 0.2A
Tcase = 125C
Tcase = 25C
1
2 -IB2/IB1
3
4
13715
0
1
2 -IB2/IB1
3
4
Figure 11. ts vs. -IB2/IB1
Figure 13. tf vs. -IB2/IB1
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TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97
BUF742
Dimensions in mm
14277
TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97
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BUF742
Ozone Depleting Substances Policy Statement
It is the policy of TEMIC TELEFUNKEN microelectronic GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs). The Montreal Protocol ( 1987) and its London Amendments ( 1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC TELEFUNKEN microelectronic GmbH semiconductor division has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. TEMIC can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC products for any unintended or unauthorized application, the buyer shall indemnify TEMIC against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. TEMIC TELEFUNKEN microelectronic GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
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TELEFUNKEN Semiconductors Rev. A2, 18-Jul-97

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