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CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2004.02.23
Page No. : 1/4
BTN8050BA3
Description
The BTN8050BA3 is designed for use in output amplifier of portable radios in class B push pull operation. * High collector current , IC = 1.5A * Low VCE(sat) * Complementary to BTP8550BA3.
Features
Symbol
BTN8050BA3
Outline
TO-92
BBase CCollector EEmitter
EBC
Absolute Maximum Ratings (Ta=25C)
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC Pd Tj Tstg Limits 40 25 6 1.5 1 150 -55~+150 Unit V V V A W C C
BTN8050BA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics (Ta=25C)
Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VBE(sat) VBE(on) hFE 1 *hFE 2 *hFE 3 fT Cob Min. 40 25 6 80 100 80 100 Typ. 9 Max. 100 100 0.5 1.2 1 500 Unit V V V nA nA V V V MHz pF
Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2004.02.23
Page No. : 2/4
Test Conditions IC=100A IC=2mA IE=100A VCB=35V VEB=6V IC=800mA, IB=80mA IC=800mA, IB=80mA VCE=1V, IC=10mA VCE=1V, IC=5mA VCE=1V, IC=100mA VCE=1V, IC=800mA VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz
*Pulse Test: Pulse Width 380s, Duty Cycle2%
Classification Of hFE 2
Rank Range C 100~180 D 160~300 E 250~500
BTN8050BA3
CYStek Product Specification
CYStech Electronics Corp.
Characteristic Curves
Current Gain vs Collector Current
1000
Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2004.02.23
Page No. : 3/4
Saturation Voltage vs Collector Current
1000 Saturation Voltage---(mV)
HFE@VCE=2V
VCE(SAT)@IC=20IB
Current Gain---HFE
100
100
10 0.1 1 10 100 1000 1 10 100 1000 Collector Current--- IC(mA) Collector Current ---IC(mA)
Saturation Voltage vs Collector Current
1000 Cutoff Frequency---FT(GHZ) Saturation Voltage---(mV) 1
Cutoff Frequency vs Collector Current
VBE(SAT)@IC=20IB
FT@VCE=2V
100 1 10 100 Collector Current ---IC(mA) 1000
0.1 1 10 Collector Current---IC(mA) 100
Power Derating Curve
1.2 Power Dissipation---PD(W) 1 0.8 0.6 0.4 0.2 0 0 50 100 150 200 Ambient Temperature --- Ta( )
BTN8050BA3
CYStek Product Specification
CYStech Electronics Corp.
TO-92 Dimension
2
Spec. No. : C223A3-B Issued Date : 2004.02.18 Revised Date : 2004.02.23
Page No. : 4/4
A B
1 2 3
Marking:
3
8050
C
D
H I E F
G
1
Style: Pin 1.Emitter 2.Base 3.Collector 3-Lead TO-92 Plastic Package CYStek Package Code: A3
*: Typical
DIM A B C D E F
Inches Min. Max. 0.1704 0.1902 0.1704 0.1902 0.5000 0.0142 0.0220 *0.0500 0.1323 0.1480
Millimeters Min. Max. 4.33 4.83 4.33 4.83 12.70 0.36 0.56 *1.27 3.36 3.76
DIM G H I 1 2 3
Inches Min. Max. 0.0142 0.0220 *0.1000 *0.0500 *5 *2 *2
Millimeters Min. Max. 0.36 0.56 *2.54 *1.27 *5 *2 *2
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
* Lead: 42 Alloy ; solder plating * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. * CYStek reserves the right to make changes to its products without notice. * CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
BTN8050BA3
CYStek Product Specification

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