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| BSS 296 SIPMOS (R) Small-Signal Transistor * N channel * Enhancement mode * Logic Level * VGS(th) = 0.8...2.0V Pin 1 G Type BSS 296 Type BSS 296 Pin 2 D Marking SS 296 Pin 3 S VDS 100 V ID 0.8 A RDS(on) 0.8 Package TO-92 Ordering Code Q62702-S217 Tape and Reel Information E6296 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values 100 100 Unit V VDS V DGR RGS = 20 k Gate source voltage Gate-source peak voltage,aperiodic Continuous drain current VGS Vgs ID 14 20 A 0.8 TA = 25 C DC drain current, pulsed IDpuls 3.2 TA = 25 C Power dissipation Ptot 1 W TA = 25 C Semiconductor Group 1 12/05/1997 BSS 296 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 125 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 1.4 0.1 8 10 0.5 0.6 2 1 50 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 0.8 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA nA 0.8 1.4 VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 125 C VDS = 60 V, VGS = 0 V, Tj = 25 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, ID = 0.8 A VGS = 4.5 V, ID = 0.8 A Semiconductor Group 2 12/05/1997 BSS 296 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.5 1.2 300 60 30 - S pF 400 90 45 ns 8 12 VDS 2 * ID * RDS(on)max, ID = 0.8 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Rise time tr 15 25 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Turn-off delay time td(off) 120 160 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Fall time tf 65 85 VDD = 30 V, VGS = 10 V, ID = 0.29 A RG = 50 Semiconductor Group 3 12/05/1997 BSS 296 Electrical Characteristics, at Tj = 25C, unless otherwise specified Symbol Values Parameter min. Reverse Diode Inverse diode continuous forward current IS typ. max. Unit A 0.9 0.8 3.2 V 1.3 TA = 25 C Inverse diode direct current,pulsed ISM - TA = 25 C Inverse diode forward voltage VSD VGS = 0 V, IF = 1.6 A Semiconductor Group 4 12/05/1997 BSS 296 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS 10 V 0.9 A 1.2 W 1.0 Ptot 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 ID 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C Drain-source breakdown voltage V(BR)DSS = (Tj) 120 V 116 114 V(BR)DSS 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Semiconductor Group 5 12/05/1997 BSS 296 Typ. output characteristics ID = (VDS) parameter: tp = 80 s , Tj = 25 C 1.8 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 2.6 Ptot = l1W k g h jif e d VGS [V] a 2.0 2.2 a b c ID 1.4 c RDS (on) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 VGS [V] = a 2.0 b 2.5 c 3.0 d 3.5 e f 4.0 4.5 g 5.0 h i 6.0 7.0 j 8.0 k l 9.0 10.0 b c 2.5 3.0 3.5 4.0 4.5 5.0 6.0 7.0 8.0 9.0 10.0 1.2 1.0 0.8 0.6 0.4 0.2 a d e f g h bi j k l d e i jg lf h k 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 A 1.5 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s VDS 2 x ID x RDS(on)max 4.5 A Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, VDS2 x ID x RDS(on)max 2.0 S ID 3.5 3.0 gfs 1.6 1.4 1.2 2.5 1.0 2.0 0.8 1.5 0.6 1.0 0.5 0.0 0 1 2 3 4 5 6 7 8 V 10 0.4 0.2 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VGS A ID 4.0 Semiconductor Group 6 12/05/1997 BSS 296 Drain-source on-resistance RDS (on) = (Tj) parameter: ID = 0.8 A, VGS = 10 V 2.0 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 RDS (on) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -60 VGS(th) 3.6 3.2 2.8 98% 2.4 98% 2.0 typ 1.6 1.2 typ 2% 0.8 0.4 -20 20 60 100 C 160 0.0 -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 3 Forward characteristics of reverse diode IF = (VSD) parameter: Tj, tp = 80 s 10 1 pF C 10 2 Ciss A IF 10 0 Coss Crss 10 1 10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 10 -2 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 12/05/1997 |
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