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| Philips Semiconductors Preliminary specification Breakover diodes BR211SM series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Typical application is transient overvoltage protection in telecommunications equipment. QUICK REFERENCE DATA SYMBOL V(BO) IH ITSM PARAMETER BR211SM-140 to BR211SM-280 Breakover voltage Holding current Non-repetitive peak current MIN. 140 150 MAX. 280 40 UNIT V mA A OUTLINE - SOD106 SYMBOL LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VD ITSM1 ITSM2 I2t dIT/dt Ptot PTM Tstg Ta Tvj PARAMETER Continuous voltage Non repetitive peak current Non repetitive on-state current I2t for fusing Rate of rise of on-state current after V(BO) turn-on Continuous dissipation Peak dissipation Storage temperature Operating ambient temperature Overload junction temperature 10/320 s impulse equivalent to 10/700 s, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 C prior to surge tp = 10 ms tp = 10 s Ta = 25C tp = 1 ms; Ta = 25C off-state on-state CONDITIONS MIN. - 40 MAX. 75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 UNIT V A A A2s A/s W W C C C THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a Zth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambient Thermal impedance junction to ambient CONDITIONS MIN. pcb mounted; minimum footprint tp = 1 ms TYP. 100 2.62 MAX. 12 UNIT K/W K/W K/W August 1996 1 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211SM series STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL V V(BR) V(BO) 1 TM PARAMETER On-state voltage Avalanche voltage (min) Breakover voltage (max) CONDITIONS ITM = 2 A I(BR) = 10mA I IS, tp = 100 s BR211SM-140 BR211SM-160 BR211SM-180 BR211SM-200 BR211SM-220 BR211SM-240 BR211SM-260 BR211SM-280 MIN. 123 140 158 176 193 211 228 246 150 100 10 - TYP. 140 160 180 200 220 240 260 280 +0.1 200 - MAX. 2.5 157 180 202 224 247 269 292 314 1000 10 UNIT V V V V V V V V V %/K mA mA mA A S(br) IH2 IS3 ID4 Temperature coefficient of V(BR) Holding current Tj = 25C Tj = 70C Switching current tp = 100 s Off-state current VD = 85% V(BR)min, Tj = 70C DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL dVD/dt Cj PARAMETER Linear rate of rise of off-state voltage that will not trigger any device Off-state capacitance CONDITIONS V(DM) = 85% V(BR)min; Tj = 70 C VD = 0 V; f = 1 kHz to 1 MHz MIN. TYP. MAX. 2000 100 UNIT V/s pF current IT VT current 100% 90% IS ITSM IH ID V(BR) I(BR) VD voltage V(BO) 50% 30% 0 Symbol Symmetric BOD time 10us 700us Fig.1. Definition of breakover diode characteristics. Fig.2. Test waveform for high voltage impulse (ITSM1) according to CCITT vol IX-Rec K17. 1 Measured under pulsed conditions to avoid excessive dissipation 2 The minimum current at which the diode will remain in the on-state 3 The avalanche current required to switch the diode to the on-state 4 Measured at maximum recommended continuous voltage. Relative humidity < 65%. August 1996 2 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211SM series 20 ITSM / A BR211 I ITSM2 time 100 ID / uA 15 10 10 max 1 5 0 0.1 1 10 100 Number of impulses 1000 10000 -40 -20 0 20 40 Tj / C 60 80 100 Fig.3. Maximum permissible non-repetitive on-state current based on sinusoidal currents; f = 50 Hz; device triggered at the start of each pulse; Tj = 70C prior to surge. V(BR)(Tj) V(BR)(25 C) Fig.6. Maximum off-state current as a function of temperature. 10 IS / A 1.06 1.04 1.02 1.00 0.98 0.96 0.94 0.92 0.90 1 max typ 0.1 0.01 min -40 -20 0 20 40 Tj / C 60 80 100 0.001 -50 0 50 Tj / C 100 150 Fig.4. Normalised avalanche breakdown voltage V(BR) and V(BO) as a function of temperature. IT / A Tj = 25 C Tj = 150 C 15 Fig.7. Switching current as a function of junction temperature. 20 10 IH / A 1 10 typ max 0.1 min 5 0.01 0 1 2 VT / V 3 4 0.001 -50 0 50 Tj / C 100 150 Fig.5. On-state current as a function of on-state voltage; tp = 200 s to avoid excessive dissipation. Fig.8. Minimum holding current as a function of temperature. August 1996 3 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211SM series 100 Cj / pF 1000 Zth / (K/W) BR211 typ BR211-140 100 BR211-280 10 10 1 P D tp t 1 1 10 VD / V 100 1000 0.1 10us 1ms 0.1s tp / s 10s 1000s Fig.9. Typical junction capacitance as a function of off-state voltage, f = 1 MHz; Tj = 25C. Fig.10. Transient thermal impedance. Zth j-a = f(tp). August 1996 4 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211SM series MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g 5.5 5.1 4.5 4.3 2.3 2.0 0.2 0.05 3.3 2.7 2.8 1.6 2.4 1.4 Fig.11. SOD106. Notes 1. For mounting and soldering instructions refer to publication SC18 "SMD Footprint Design and Soldering Guidelines". Order code:9397 750 00505. August 1996 5 Rev 1.100 Philips Semiconductors Preliminary specification Breakover diodes BR211SM series DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1996 6 Rev 1.100 |
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