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BPW76 Vishay Semiconductors Silicon NPN Phototransistor Description BPW76 is a high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its flat glass window makes it ideal for applications with external optics. A base terminal is available to enable biasing and sensitivity control. 94 8401 Features * Hermetically sealed case * * * * * * * * * * Flat window Very wide viewing angle = 40 Exact central chip alignment Long range light barrier with an additional optics Base terminal available High photo sensitivity Suitable for visible and near infrared radiation Selected into sensitivity groups Lead-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Detector in electronic control and drive circuits Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector current Collector peak current Total Power Dissipation Junction Temperature Storage Temperature Range Soldering Temperature Thermal Resistance Junction/ Ambient Thermal Resistance Junction/ Case t5s tp/T = 0.5, tp 10 ms Tamb 25 C Test condition Symbol VCBO VCEO VEBO IC ICM Ptot Tj Tstg Tsd RthJA RthJC Value 80 70 5 50 100 250 125 - 55 to + 125 260 400 150 Unit V V V mA mA mW C C C K/W K/W Document Number 81526 Rev. 1.3, 08-Mar-05 www.vishay.com 1 BPW76 Vishay Semiconductors Electrical Characteristics Tamb = 25 C, unless otherwise specified Parameter Collector Emitter Breakdown Voltage Collector-emitter dark current Collector-emitter capacitance Test condition IC = 1 mA VCE = 20 V, E = 0 VCE = 5 V, f = 1 MHz, E = 0 Symbol V(BR)CEO ICEO CCEO Min 70 1 6 100 Typ. Max Unit V nA pF Optical Characteristics Tamb = 25 C, unless otherwise specified Parameter Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Voltage Turn-On Time Turn-Off Time Cut-Off Frequency Ee = 1 IC = 0.1 mA mW/cm2, = 950 nm, Test condition Symbol p 0.5 VCEsat ton toff fc Min Typ. 40 850 620 to 980 0.15 6 5 110 0.3 Max Unit deg nm nm V s s kHz VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 VS = 5 V, IC = 5 mA, RL = 100 Type Dedicated Characteristics Parameter Collector Light Current Test condition Ee = 1 mW/cm2, = 950 nm, VCE = 5 V Part BPW76A BPW76B Symbol Ica Ica Min 0.4 0.6 Typ. 0.6 1.2 Max 0.8 Unit mA mA Typical Characteristics (Tamb = 25 C unless otherwise specified) Ptot -Total Power Dissipation ( mW ) I CEO - Collector Dark Current ( nA ) 800 10 6 10 5 10 4 10 3 10 2 10 1 10 0 20 V CE = 20V E=0 600 RthJC 400 200 RthJA 0 0 25 50 75 100 125 150 50 100 150 94 8342 Tamb - Ambient T emperature ( C ) 94 8343 Tamb - Ambient Temperature ( C ) Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.com 2 Document Number 81526 Rev. 1.3, 08-Mar-05 BPW76 Vishay Semiconductors C CEO - Collector Emitter Capacitance ( pF ) 20 16 f=1MHz 2.50 I ca rel - Relative Collector Current 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0 0 VCE = 5 V E e = 1 mW/cm 2 = 950 nm 12 8 4 0 0.1 1 10 100 V CE - Collector Emitter Voltage ( V ) 10 20 30 40 50 60 70 80 90 100 Tamb - Ambient Temperature ( C ) 94 8247 948344 Figure 3. Relative Collector Current vs. Ambient Temperature Figure 6. Collector Emitter Capacitance vs. Collector Emitter Voltage 12 10 8 6 4 2 0 ton V CE=5V RL=100 =950nm 1 0.1 V CE = 5 V = 950 nm 0.01 ton / toff -Turn on / Turn off Time ( s ) Ica - Collector Light Current ( mA) 10 toff 0.001 0.01 94 8345 0.1 1 10 94 8253 0 4 8 12 16 Ee - Irradiance ( mW/cm2 ) I C - Collector Current ( mA ) Figure 4. Collector Light Current vs. Irradiance Figure 7. Turn On/Turn Off Time vs. Collector Current Ica - Collector Light Current ( mA) 1 BPW76A = 950 nm Ee =1 mW/cm2 0.5 mW/cm2 S ( )rel - Relative Spectral Sensitivity 1.0 0.8 0.6 0.4 0.2 0 400 0.2 mW/cm2 0.1 0.1 mW/cm2 0.05mW/cm2 0.01 0.1 1 10 100 94 8348 600 800 1000 94 8346 V CE - Collector Emitter Voltage ( V ) - Wavelength ( nm ) Figure 5. Collector Light Current vs. Collector Emitter Voltage Figure 8. Relative Spectral Sensitivity vs. Wavelength Document Number 81526 Rev. 1.3, 08-Mar-05 www.vishay.com 3 BPW76 Vishay Semiconductors 0 Srel - Relative Sensitivity 10 20 Figure 9. Relative Radiant Sensitivity vs. Angular Displacement 30 40 1.0 0.9 0.8 0.7 50 60 70 80 0.6 0.4 0.2 0 0.2 0.4 0.6 94 8347 Package Dimensions in mm 96 12175 www.vishay.com 4 Document Number 81526 Rev. 1.3, 08-Mar-05 BPW76 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81526 Rev. 1.3, 08-Mar-05 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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