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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW85 HF/VHF power transistor
Product specification March 1993
Philips Semiconductors
Product specification
HF/VHF power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and is guaranteed to withstand severe load mismatch conditions with a supply over-voltage to 16,5 V. Matched hFE groups are available on request. It has a 3/8" flange envelope with a ceramic cap. All leads are isolated from the flange.
BLW85
QUICK REFERENCE DATA R.F. performance up to Th = 25 C MODE OF OPERATION c.w. (class-B) s.s.b. (class-AB) VCE V 12,5 12,5 f MHz 175 1,6-28 PL W 45 3-30 (P.E.P.) > Gp dB 4,5 > typ. 19,5 % 75 typ. 35 zi 1,4 + j1,5 - ZL 2,7-j1,3 - d3 dB - typ. -33
PIN CONFIGURATION
halfpage
PINNING - SOT123 PIN 1 DESCRIPTION collector emitter base emitter
1
4 c
handbook, halfpage
2 3 4
e
b
MBB012
2
3
MSB057
Fig.1 Simplified outline and symbol.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
March 1993
2
Philips Semiconductors
Product specification
HF/VHF power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (VBE = 0) peak value Collector-emitter voltage (open base) Emitter-base voltage (open-collector) Collector current (average) Collector current (peak value); f > 1 MHz R.F. power dissipation up to (f > 1 MHz); Tmb = 25 C Storage temperature Operating junction temperature VCESM VCEO VEBO IC(AV) ICM Prf Tstg Tj max. max. max. max. max. max. max.
BLW85
36 V 16 V 4V 9A 22 A 105 W 200 C
-65 to + 150 C
handbook, halfpage
10
MGP612
MGP613
handbook, halfpage P
IC (A)
120 rf (W) 100
Th = 70 C
Tmb = 25 C 80
short-time operation during mismatch continuous r.f. operation derate by 0.58 W/K
60 continuous d.c. operation derate by 0.43 W/K
40
20
1
1
10
VCE (V)
102
0 0 50 100 Th (C) 150
Fig.2 D.C. SOAR.
Fig.3 R.F. power dissipation; VCE 16,5 V; f 1 MHz.
THERMAL RESISTANCE (dissipation = 30 W; Tmb = 79 C, i.e. Th = 70 C) From junction to mounting base (d.c. dissipation) From junction to mounting base (r.f. dissipation) From mounting base to heatsink Rth j-mb(dc) Rth j-mb(rf) Rth mb-h = = = 2,5 K/W 1,8 K/W 0,3 K/W
March 1993
3
Philips Semiconductors
Product specification
HF/VHF power transistor
CHARACTERISTICS Tj = 25 C Collector-emitter breakdown voltage VBE = 0; IC = 50 mA Collector-emitter breakdown voltage open base; IC = 100 mA Emitter-base breakdown voltage open collector; IE = 25 mA Collector cut-off current VBE = 0; VCE = 18 V Second breakdown energy; L = 25 mH; f = 50 Hz open base RBE = 10 D.C. current gain(1) hFE hFE1/hFE2 voltage(1) VCEsat MHz(1) fT fT Cc Cre Ccf typ. typ. typ. typ. typ. typ. < IC = 4 A; VCE = 5 V D.C. current gain ratio of matched devices(1) IC = 4 A; VCE = 5 V Collector-emitter saturation IC = 12,5 A; IB = 2,5 A Transition frequency at f = 100 -IE = 4 A; VCB = 12,5 V -IE = 12,5 A; VCB = 12,5 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 15 V Feedback capacitance at f = 1 MHz IC = 200 mA; VCE = 15 V Collector-flange capacitance Note 1. Measured under pulse conditions: tp 200 s; 0,02. ESBO ESBR > > typ. ICES < V(BR)EBO > V(BR) CEO > V(BR) CES >
BLW85
36 V 16 V 4V 25 mA 8 mJ 8 mJ 50 10 to 80 1,2 1,5 V 650 MHz 600 MHz 120 pF 82 pF 2 pF
March 1993
4
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP614
handbook, halfpage
100
MGP615
typical values Tj = 25 C
handbook, halfpage
300
hFE 75 VCE = 12.5 V 5V 50
Cc (pF) 200 typ
IE = Ie = 0 f = 1 MHz
100 25
0 0 5 10 IC (A) 15
0 0 10 VCB (V) 20
Fig.4
Fig.5 Tj = 25 C.
handbook, full pagewidth
750
MGP616
fT (MHz)
VCB = 12.5 V 10 V
typical values f = 100 MHz Tj = 25 C
500 5V
250
0 0 5 10 15 -IE (A) 20
Fig.6
March 1993
5
Philips Semiconductors
Product specification
HF/VHF power transistor
APPLICATION INFORMATION R.F. performance in c.w. operation (unneutralized common-emitter class-B circuit); Th = 25 C f (MHz) 175 175 VCE (V) 12,5 13,5 PL (W) 45 45 PS (W) < 16 - Gp (dB) > 4,5 typ. 6,0 IC (A) < 4,8 - (%) > 75 typ. 75 zi () 1,4 + j1,5 -
BLW85
ZL () 2,7 - j1,3 -
handbook, full pagewidth
C1 50
L1 C2
,, ,, ,,
C3a L5 L4 T.U.T. L2 C3b L6 C4 C5 L3 L8 +VCC
C6a C7 50 C8
L7
C6b
R2
R1
MGP604
Fig.7 Test circuit; c.w. class-B.
List of components: C1 C2 C4 C5 C7 L1 L2 L3 L4 L6 L7 R1 R2 = 2,5 to 20 pF film dielectric trimmer (cat. no. 2222 809 07004) = C8 = 4 to 40 pF film dielectric trimmer (cat. no. 2222 809 07008) = 120 pF ceramic capacitor (500 V) = 100 nF polyester capacitor = 5 to 60 pF film dielectric trimmer (cat. no. 2222 809 07011) = 1 turn Cu wire (1,6 mm); int. dia. 9,0 mm; leads 2 x 5 mm = 100 nH; 7 turns closely wound enamelled Cu wire (0,5 mm); int. dia. 3 mm; leads 2 x 5 mm = L8 = Ferroxcube wide-band h.f. choke, grade 3B (cat. no. 4312 020 36640) = L5 = strip (12 mm x 6 mm); taps for C3a and C3b at 5 mm from transistor = 2 turns enamelled Cu wire (1,6 mm); int. dia. 5,0 mm; length 6,0 mm; leads 2 x 5 mm = 2 turns enamelled Cu wire (1,6 mm); int. dia. 4,5 mm; length 6,0 mm; leads 2 x 5 mm = 10 (10%) carbon resistor (0,25 W) = 4,7 (5%) carbon resistor (0,25 W)
C3a = C3b = 47 pF ceramic capacitor (500 V)
C6a = C6b = 8,2 pF ceramic capacitor (500 V)
L4 and L5 are strips on a double Cu-clad printed-circuit board with epoxy fibre-glass dielectric, thickness 1/16".
Component layout and printed-circuit board for 175 MHz test circuit are shown in Fig.8.
March 1993
6
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
handbook, full pagewidth
150
72
1888MJK
L3 C4 R1 L2 C1 C2 L1 L4 L7 C3b C3a L5 L6
L8 +VCC C5 R2
C6a C7 C8 C6b
1888MJK
rivet
MGP605
Fig.8 Component layout and printed-circuit board for 175 MHz test circuit.
The circuit and the components are situated on one side of the epoxy fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets. To minimize the dielectric losses, the ground plane under the interconnection of L7 and C7 has been removed.
March 1993
7
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP617
handbook, halfpage
100
MGP618
handbook, halfpage
10
100 (%)
PL (W) 75 Th = 25 C
Gp (dB)
50 Th = 70 C
5
Gp
50
25
0 0 10 20 PS (W) 30
0 10 30 PL (W) 50
0
Fig.9
Typical values; f = 175 MHz; VCE = 12,5 V; - - - VCE = 13,5 V.
Fig.10 Typical values; f = 175 MHz ;Th = 25 C; VCE = 12,5 V; - - - VCE = 13,5 V.
MGP619
handbook, halfpage
60
PLnom (W) (VSWR = 1) 50 VSWR = 4
5
The transistor has been developed for use with unstabilized supply voltages. As the output power and drive power increase with the supply voltage, the nominal output power must be derated in accordance with the graph for safe operation at supply voltages other than the nominal. The graph shows the permissible output power under nominal conditions (VSWR = 1), as a function of the expected supply over-voltage ratio with VSWR as parameter. The graph applies to the situation in which the drive (PS/PSnom) increases linearly with supply over-voltage ratio.
40
10 20 50 PS PSnom
30 1 1.1 1.2 VCE VCEnom 1.3
Fig.11 R.F. SOAR; (short-time operation during mismatch); f = 175 MHz; Th = 70 C; Rth mb-h = 0,3 K/W ; VCEnom = 12,5 V or 13,5 V; PS = PSnom at VCEnom and VSWR =1 measured in the circuit of Fig.7.
March 1993
8
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
MGP620
MGP621
handbook, halfpage
2
ri
handbook, halfpage
4
ri, xi () xi 0
RL, XL () RL 2
-2
0 XL
-4
0
100
f (MHz)
200
-2
0
100
f (MHz)
200
Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 C
Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 C
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
MGP622
handbook, halfpage
20
Gp (dB)
10
0 0 100 f (MHz) 200
Typical values; VCE = 12,5 V; PL = 45 W; class-B operation; Th = 25 C
Fig.14
March 1993
9
Philips Semiconductors
Product specification
HF/VHF power transistor
R.F. performance in s.s.b. class-AB operation VCE = 12,5 V; Th up to 25 C; Rth mb-h 0,3 K/W f1 = 28,000 MHz; f2 = 28,001 Mhz OUTPUT POWER W 3 to 30 (P.E.P.) Note Gp dB typ. 19,5 dt % typ. 35 d3 dB(1) typ. -33 d5 dB(1) typ. -36
BLW85
IC(ZS) mA 25
1. Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
handbook, full pagewidth
C10 C1 L4 L1 T.U.T. C11 C2 C3 C4 L2 R1 C6 L3 C12 C13 C14 RL = 50
RS = 50
+VB = 12.5 V R3 R5
C5 C7
C8 TR2 C16 TR1 R6 R4 C15 bias C9 R2 L5 +VB = 12.5 V
MGP623
Fig.15 Test circuit; s.s.b. class-AB.
March 1993
10
Philips Semiconductors
Product specification
HF/VHF power transistor
List of components: TR1 = TR2 = BD137 C1 C2 C3 C4 C5 C6 C8 C9 = 100 pF air dielectric trimmer (single insulated rotor type) = 27 pF ceramic capacitor (500 V) = 180 pF polystyrene capacitor = 100 pF air dielectric trimmer (single non-insulated rotor type) = C7 = 3,9 nF polyester capacitor = 2 x 270 pF polystyrene capacitors in parallel = C15 = C16 = 100 nF polyester capacitor = 2,2 F moulded metallized polyester capacitor
BLW85
C10 = 2 x 385 pF (sections in parallel) film dielectric trimmer C11 = 68 pF ceramic capacitor (500 V) C12 = 2 x 82 pF ceramic capacitors in parallel (500 V) C13 = 47 pF ceramic capacitor (500 V) C14 = 385 pF film dielectric trimmer L1 L2 L3 L4 R1 R2 R3 R4 R5 R6 = 88 nH; 3 turns Cu wire (1,0 mm); int. dia. 9 mm; length 6,1 mm; leads 2 x 5 mm = L5 = Ferroxcube choke coil (cat. no. 4312 020 36640) = 68 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 8 mm; length 8,3 mm; leads 2 x 5 mm = 96 nH; 3 turns enamelled Cu wire (1,6 mm); int. dia. 10 mm; length 7,6 mm; leads 2 x 5 mm = 27 (5%) carbon resistor (0,5 W) = 4,7 (5%) carbon resistor (0,25 W) = 1,5 k (5%) carbon resistor (0,5 W) = 10 wirewound potentiometer (3 W) = 47 wirewound resistor (5,5 W) = 150 (5%) carbon resistor (0,25 W)
March 1993
11
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
handbook, halfpage intermodulation distortion versus
-20
MGP624
MGP625
handbook, halfpage double-tone efficiency versus
40
output power * d3, d5 (dB) d3 -40 d5 20 dt (%)
output power typ
-60
0 0 20 P.E.P. (W) 40 0 20 P.E.P. (W) 40
VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th = 25 C; Rth mb-h 0,3 K/W; IC(ZS) = 25 mA; typical values.
VCE = 12,5 V; f1 = 28,000 Mhz; f2 = 28,001 MHz; Th = 25 C; Rth mb-h 0,3 K/W; IC(ZS) = 25 mA; typical values.
Fig.16
Fig.17
handbook, halfpage intermodulation distortion versus
-20
MGP626
output power *
handbook, halfpage double-tone efficiency versus
MGP627
40
d3, d5 (dB) d3 -40 d5 20 dt (%)
output power
typ
-60
0
20
P.E.P. (W)
40 0 0 20 P.E.P. (W) 40 VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; Rth mb-h 0,3 K/W ; IC(ZS) = 25 mA; typical values.
VCE = 13,5 V; f1 = 28,000 MHz; f2 = 28,001 MHz; Th = 25 C; Rth mb-h 0,3 K/W ; IC(ZS) = 25 mA; typical values. * Stated intermodulation distortion figures are referred to the according level of either of the equal amplified tones. Relative to the according peak envelope powers these figures should be increased by 6 dB.
Fig.18
Fig.19
March 1993
12
Philips Semiconductors
Product specification
HF/VHF power transistor
BLW85
handbook, halfpage
30
MGP628
handbook, halfpage
10
MGP629
5 xi ()
ri () Gp (dB) 7.5 ri
2.5
20
5
0
2.5 xi
-2.5
10 1 10 f (MHz)
102
0 1 10 f (MHz)
-5 102
Fig.20 Power gain as a function of frequency.
Fig.21 Input impedance (series components) as a function of frequency.
Fig. 20 and 21 are typical curves and hold for an unneutralized amplifier in s.s.b. class-AB operation. Conditions: VCE = 12, 5 V PL = 30 W (P.E.P.) Th = 25 C Rth mb-h 0,3 K/W IC(ZS) = 25 mA ZL = 1,8 VCE = 13, 5 V PL = 35 W (P.E.P.) Th = 25 C Rth mb-h 0,3 K/W IC(ZS) = 25 mA ZL = 1,8
March 1993
13
Philips Semiconductors
Product specification
HF/VHF power transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
BLW85
SOT123A
D
A F q U1 C B
w2 M C H L b c
4
3
A
p
U2
U3
1 2
H
w1 M A B
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.47 6.37 0.294 0.251 b 5.82 5.56 c 0.18 0.10 D 9.73 9.47 D1 9.63 9.42 F 2.72 2.31 H 20.71 19.93 L 5.61 5.16 p 3.33 3.04 Q 4.63 4.11 q 18.42 U1 25.15 24.38 0.99 0.96 U2 6.61 6.09 0.26 0.24 U3 9.78 9.39 0.385 0.370 w1 0.51 0.02 w2 1.02 45 0.04
0.229 0.007 0.219 0.004
0.383 0.397 0.107 0.815 0.373 0.371 0.091 0.785
0.221 0.131 0.203 0.120
0.182 0.725 0.162
OUTLINE VERSION SOT123A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
March 1993
14
Philips Semiconductors
Product specification
HF/VHF power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW85
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
March 1993
15

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